基于层面信息的路径优化

根据分层物体快速成型（LOM）中零件逐层累积的特点，从缩短加工时间、提高制件效率方面着手阐述了路径优化的必要性，针对LOM机的运动机理和软件数据结构，给出了扫描路径优化的原理，将图论中的便宜算法用于LOM机的扫描路径优化。     

浅谈长大距离电力电缆施工质量控制

作者对铁路客运专线或时速250km／h新建铁路，10kv电力贯通线全线采用高压电缆，在施工运输、安装过程中如何克服外力作用和人为因素等原因造成的质量隐患，总结了施工过程控制的经验和体会。     

STL模型布尔运算的实现

首先建立STL模型的拓扑结构从而获得三角面片间的相邻关系．通过两个实体间的棱面相交性测试获得交点和交线,进而提取交线环．利用约束Delaunay方法对相交的三角形进行二次三角形划分,将相交表面沿交线环剖分为多个面域,利用射线法判断各个面域相对于另一实体的位置关系．通过提取相交环来决定有效的相交线降低了位置关系判断的复杂性,提高了布尔运算的稳定性．     

SEGREGATED VECTOR SOLUTIONS FOR NONLINEAR SCHR?DINGER SYSTEMS IN R~2

We study the following nonlinear Schrodinger system where P(τ) and Q(τ) are positive radial functions,μ 0,v 0,and β∈ R is a coupling constant.This type of system arises,particularly,in models in Bose-Einstein condensates theory.Applying a finite reduction method,we construct an unbounded sequence of nonradial positive vector solutions of segregated type when β is in some suitable interval,which gives an answer to an interesting problem raised by Peng and Wang in Remark 4.1(Arch.Ration.Mech.Anal.,208(2013),305-339).     

新型城市共享单车智能借还系统的设计与实现

就目前而言,我国共享产品种类越发增多,共享单车作为最为常见且受欢迎的共享产品之一,于我国各个城市之中都得到了快速的普及推广。本文就新型城市共享单车智能借还系统的设计进行研究,旨在规范共享单车的借还操作,在方便单车借还的同时,有效延长单车的使用寿命。     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

New Voronoi Diagram Algorithm of Multiply-Connected Planar Areas in the Selective Laser Melting

This paper studies the practical generation of Voronoi diagrams for multiply-connected planar areas bounded by line segments. The core of the algorithm was calculating Voronoi polygon of every Voronoi object in planar areas independently. The main approach had two steps. The first step was calculating all relevant bisectors of every Voronoi object. The second was combining obtained bisectors into completed Voronoi polygons individually. All code was implemented in Visual C++ platform. The resulting code was extensively tested in real-world data and its practical running time grew only linearly. Three statistical CPU-consumption charts had been drawn with the Voronoi diagrams computation data, and compared with other published codes for computing Voronoi diagrams. The algorithm was applied to compute offsetting of slice area consisting of large-scale line segments for the selective laser melting (SLM) trajectory scanning technology which is a kind of rapid prototyping (RP). The experimental results of offsetting for slice area based on Voronoi diagrams show that the approach is effective and simple for polygon offsetting problems. The method is helpful to those offsetting work and can provide more effective offsetting solution.     

Wn C0,±(n=1,…,6)团簇结构与电子性质的理论研究

利用密度泛函理论(DFT)中的杂化密度泛函B3LYP在Lanl2dz基组水平上对WnC0.±(n=1,…,6)团簇的各种可能构型进行几何结构优化,得出它们的基态构型,并对基态构型的稳定性和电子性质进行理论研究.结果表明,当n＞3时,稳定构型从平面转变成立体结构,同时C原子趋向于表面最稳定;C原子的掺入使得Wn团簇的稳定...     

Radiation induced inter-device leakage degradation

The evolution of inter-device leakage current with total ionizing dose in transistors in 180 nm generation technologies is studied with an N-type poly-gate field device (PFD) that uses the shallow trench isolation as an effective gate oxide. The overall radiation response of these structures is determined by the trapped charge in the oxide. The impacts of different bias conditions during irradiation on the inter-device leakage current are studied for the first time in this work, which demonstrates that the worst condition is the same as traditional NMOS transistors. Moreover, the two-dimensional technology computer-aided design simulation is used to understand the bias dependence.     

太钢2号连铸机大型预埋件安装施工技术

重点介绍了太钢2号连铸机工程大型预埋铁件的施工，通过采用防变形钢固定架，螺旋千斤顶精调整等一系列技术措施，确保了施工精度与质量要求，此施工方法可在大型铁件施工中推广。