表面增强拉曼散射胶带:一种原位检测平台

基于局域表面等离基元共振的原理,表面增强拉曼光谱(SERS)技术因其具有灵敏度高、使用方便、能提供近场增强的优点,广泛用于催化、光谱电化学、传感等领域[1-2]。表面增强拉曼基底是SERS的核心,硅片、玻璃片是最常用的用于制备SERS基底的衬底材料,然而他们的刚性特征限制了其应用范围。我们提出了一种简单的制备表面增强拉曼散射胶带的方法,利用胶带的粘性特征直接将沉积在刚性硅片表面的纳米结构转移至胶带表面。需要用时直接将胶带撕下来贴在需要检测的位置上,这种表面增强拉曼散射胶带可灵活方便用于固体、液体的原位检测和研究。     

Ag离子注入对Si和SiO2表面的辐照改性

为了研究注入Ag离子对基底的辐照改性作用,利用MEVVA源将不同剂量的Ag离子注入到Si和SiO2玻璃片中形成Ag纳米颗粒,并测试了SiO2玻璃片的光透过率谱,2种基底的光致发光谱和纳米压痕实验。注入高压为45KV,束流1mA,剂量分别为:5×1015、2×1016、4×1016、5×1016、8×1016、9×1016和1×1017ions/cm2。对SiO2玻璃的紫外可见光透射光谱分析表明在低剂量时400nm处有一吸收峰,当剂量达到1×1017时在450nm处出现伴峰。对比Ag离子注入前后Si和SiO2基底的光致发光谱后分析了Ag离子注入对基底发光性能的影响。通过纳米压痕测试表征了掺入Ag后基底的纳米硬度和弹性模量的变化。观察TEM样品得到了基底中Ag纳米颗粒的大小,形貌和分布等情况。     

Anisotropic and mutable magnetization in Kondo lattice CeSb_2

We have systematically studied the behaviors of the resistivity and magnetization of CeSb_2 single crystals as a function of temperature and external field. Four anomalies in the resistivity/magnetization-versus-temperature curves are observed at low magnetic field. They are located at 15.5 K, 11.5 K, 9.5 K, and 6.5 K, corresponding to the paramagnetic–magnetically ordered state(MO), MO-antiferromagnetic(AFM), AFM–AFM, and AFM–ferromagnetic(FM) transitions, respectively.The anomaly at 9.5 K is only visible with H‖[010] by magnetic susceptibility measurements, indicating that the AFM–AFM transition only happens along [010] direction in ab-plane. The four magnetic transitions are strongly suppressed by high external field. Finally, the field-temperature phase diagrams of CeSb_2 with different orientations of the applied field in ab-plane are constructed and indicate the highly anisotropic nature of the magnetization of CeSb_2.     

技术创新：案例企业的经验和启示

本文根据掌握的情况选择了11家案例企业，分析探讨其创新情况和创新经验，提出一些建议。     

Ab initio study of H/O trapping and clustering on U/Al interface

Al coating on U surfaces is one of the methods to protect U against environmental corrosion. The behaviors of hydrogen and oxygen impurities near the Al/α-U interface have been studied in the density functional theory framework. It turns out that U vacancies tend to segregate to the interface with segregation energies of around 0.5-0.8 eV. The segregated U vacancy can act as a sink for H and O impurities, which is saturated when filled with 8 H or 6 O atoms, respectively.Moreover, the O impurities tend to stay in the Al layer while the H impurities prefer to diffuse into the U lattice, suggesting that the Al coating can play a significant role against oxidation but not against hydrogenation of U.     

From Carbon Nanotube Crystals to Carbon Nanotube Flowers

We have investigated the very initial deposition stages of chemical vapor deposition （CVD） with ferrocene （Fe（CsH5）2） and xylene （C8H10） for growing carbon nanotubes, and made clear that the mechanism for the self-organization behaviors of nanotubes at different growth stages by this approach. For instance, the organization of nanotubes into flower-like structures at prolonged deposition is developed from the crystal-like structures formed at early growth stages, both of which are closely related to and determined by the very initial deposition stages of this CVD approach. Based on this approach, ways have been established to build up different architectures of carbon nanotubes, by controlling the initial deposition stages of the CVD process, with which we have realized the selective growth of self-organized carbon nanotube structures. This study provides a new idea for growing carbon nanotube architectures by CVD.     

Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

Highly c-axis oriented un-doped zinc oxide（Zn O） thin films, each with a thickness of ～ 100 nm, are deposited on Si（001） substrates by pulsed electron beam deposition at a temperature of ～ 320℃, followed by annealing at 650℃ in argon in a strong magnetic field. X-ray photoelectron spectroscopy（XPS）, positron annihilation analysis（PAS）, and electron paramagnetic resonance（EPR） characterizations suggest that the major defects generated in these Zn O films are oxygen vacancies. Photoluminescence（PL） and magnetic property measurements indicate that the room-temperature ferromagnetism in the un-doped Zn O film originates from the singly ionized oxygen vacancies whose number depends on the strength of the magnetic field applied in the thermal annealing process. The effects of the magnetic field on the defect generation in the Zn O films are also discussed.