Design and gamma sensitivity measurement of a novel dual-emitter vacuum Compton detector

A novel dual-emitter vacuum Compton detector (D-VCD) with higher gamma ray detecting efficiency is proposed. The emitters are made of Ta--Al clad metal. The gamma ray sensitivity is studied by Monte Carlo simulation using the MCNP code. A comparison between calculations and results measured by using the 1.25~MeV gamma ray of Co-60 is also performed. Experimental sensitivities for two sample D-VCDs with the same materials and structures are 1.92×10^ - 20 and 2.02×10^ - 20~C.cm²/MeV separately, which are consistent with the simulation result of 1.98×10^ - 20~C.cm²/MeV and are 4 times higher than that of VCD with a single Fe emitter. According to the simulation results, in a gamma energy range from 0.5 to 3~MeV, the maximum sensitivity variance for the D-VCD is less than 15%, and less than 5% in a range from 1 to 2~MeV in particular. The novel D-VCD is applicable to the detection of intense pulse gamma rays.     

相对永久密封真空康普顿探测器伽马灵敏度研究

针对强流脉冲γ射线探测,研制了厚入射窗结构真空康普顿探测器,并在60Co辐照装置上,准直孔径为40 mm的条件下,对2套样品探测器灵敏度进行了测量,得到了1.25 MeV的γ射线灵敏度,实验值分别为4.65×10-22 C/MeV和4.59×10-22 C/MeV.该实验值与蒙特卡罗程序MCNP的计算值(4.70×10-22 C/MeV)相比,误差范围一致,在0.5～3.0 MeV能量区间,探测灵敏度的能量响应变化小于20%.实验证明:该探测器比薄窗结构真空康普顿探测器的灵敏度提高了60%,克服了薄窗探测器封装加工和静态真空保持的困难;保存使用期可达2年以上,达到了相对永久密封的目的,可应用于粒子注量率为1020 cm-2·s-1以上的强流脉冲γ射线测量.     

DT聚变脉冲中子产额的活化测量法

设计了一个测量高强度DT聚变脉冲中子产额的活化探测器.该探测器由中子慢化体、天然银片、塑料闪烁体和光电倍增管组成,其输出电流通过一个小电流计来获取.通过分析探测器在直流标定和脉冲测量两种状态下输出电流的变化曲线,求解出了特征参数,进而推导计算出DT聚变脉冲中子源的产额.实践证明,这种测量方法与传统的活化法相比,减少了对...     

复合金属发射极真空康普顿探测器结构设计

采用Ta—Al复合金属电子转换靶设计了一种厚窗真空型康普顿探测器，其对1.25 MeV γ射线的探测效率达到7.85×10-3 e/γ，比Fe发射极探测器的探测效率高出约2.5倍。探测器具有良好的封装加工和静态真空保持特性，可用于强流脉冲γ射线测量场合。