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为研究煤尘云的着火敏感性,选取3种典型煤尘-无烟煤、烟煤、褐煤,采用Godbert-Greenwald恒温炉装置,研究不同测试条件及煤尘种类对煤尘云最低着火温度的影响,以及惰性粉尘对煤尘云着火的抑制作用.研究表明:随着喷尘压力的增大,煤尘云最低着火温度先降低后升高,存在最佳喷尘压力为50 kPa,对应的煤尘云着火温度最低;随着煤尘粒径的增大,煤尘云最低着火温度呈线性升高的趋势;随着煤尘云浓度的增大,煤尘云最低着火温度先降低后升高;3种煤尘云均存在最佳着火浓度:无烟煤和烟煤为1.818 g/L,褐煤为1.364 g/L;煤尘云的最低着火温度随挥发分含量的增大而减小;挥发分质量分数小于15%的煤尘,灰分的阻燃作用明显,挥发分质量分数大于15%时,灰分的阻燃作用不明显;惰性粉尘对煤尘云着火的抑制效果:炭黑最强、粉煤灰次之,CaCO3最弱. 相似文献
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在15 kW加压流化床富氧燃烧实验台上,进行了内蒙古烟煤在850~900℃下的加压富氧燃烧实验,研究了压力为0. 1~0. 4 MPa、空气和21%~30%氧浓度的O_2/CO_2气氛下燃烧的碳转化规律.研究结果表明:稳态富氧燃烧条件下,加压流化床富氧燃烧实验台干烟气中CO_2浓度均超过90%.提高燃烧压力有利于提高碳转化率和CO_2生成率,有利于降低CO生成率.在压力0. 1~0. 3 M Pa范围内,CO_2生成率随着压力的增加基本呈线性递增关系,从85%左右增加到93%左右.进一步增加压力,CO_2生成率逐渐趋于平稳,并保持在较高水平.在压力为0. 4 MPa条件下,CO_2生成率增加到95%左右.提高O_2/CO_2气氛的氧浓度能够提高碳转化率和CO_2生成率,但是随着压力的提高,氧浓度对碳转化率和CO_2生成率的影响减小. 相似文献
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对s脉冲电压作用下铜丝水中电爆炸的能量沉积过程进行了实验研究,利用自积分Rogowski线圈和电阻分压器分别测量铜丝电爆炸时的电流和电压。利用测量电压波形确定了熔融起始、熔融结束、汽化起始和击穿时刻点,将铜丝电爆炸划分成熔融、液态和汽化3个阶段。通过数学方法计算了3个阶段和击穿前的沉积总能量。通过实验和计算,分析了电路参数,包括放电电压和回路电感,以及铜丝特性,包括铜丝长度和直径,对铜丝电爆炸过程中3个阶段和击穿前沉积总能量的影响。结果表明:在s脉冲电压作用下,放电电压、回路电感、铜丝长度和直径对熔融阶段能量沉积影响较小,但对液态和汽化阶段能量沉积影响较大,通过调节电路参数提高电流上升速率,可以显著提高汽化和击穿前的沉积能量。 相似文献
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Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier
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The kink effect in current–voltage(IV)characteristic s seriously deteriorates the performance of a GaN-based HEMT.Based on a series of direct current(DC)IV measurements in a GaN-based HEMT with an AlGaN back barrier,a possible mechanism with electron-trapping and detrapping processes is proposed.Kink-related deep levels are activated by a high drain source voltage(Vds)and located in a GaN channel layer.Both electron trapping and detrapping processes are accomplished with the help of hot electrons from the channel by impact ionization.Moreover,the mechanism is verified by two other DC IV measurements and a model with an expression of the kink current. 相似文献
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Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors
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The current voltage (IV) characteristics are greatly influenced by the dispersion effects in AlGaN/GaN high electron mobility transistors. The direct current (DC) IV and pulsed IV measurements are performed to give a deep investigation into the dispersion effects, which are mainly related to the trap and self-heating mechanisms. The results show that traps play an important role in the kink effects, and high stress can introduce more traps and defects in the device. With the help of the pulsed IV measurements, the trapping effects and self-heating effects can be separated. The impact of time constants on the dispersion effects is also discussed. In order to achieve an accurate static DC IV measurement, the steady state of the bias points must be considered carefully to avoid the dispersion effects. 相似文献
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提出了一种基于Contourlet域独立分量分析的视频水印.该水印算法首先对视频进行镜头分割;然后对同一镜头中的视频帧分别进行Contourlet分解,并选取分解后的带通分量进行独立分量分析;最后采用邻近特征值平均法将Arnold变换置乱后的水印嵌入到独立分量分析所得的运动分量上.实验结果表明,该算法在保证水印不可见性的同时能够有效地抵抗MPEG压缩及其它常见攻击,并且大大减少了计算量. 相似文献
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Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain–source current correction method
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A new modified Angelov current–voltage characteristic model equation is proposed to improve the drain–source current(Ids) simulation of an Al Ga N/Ga N-based(gallium nitride) high electron mobility transistor(Al Ga N/Ga N-based HEMT) at high power operation. Since an accurate radio frequency(RF) current simulation is critical for a correct power simulation of the device, in this paper we propose a method of Al Ga N/Ga N high electron mobility transistor(HEMT)nonlinear large-signal model extraction with a supplemental modeling of RF drain–source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency(PAE) at class-AB quiescent bias of Vgs =-3.5 V, Vds= 30 V with a frequency of 9.6 GHz are presented. 相似文献
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无约束气云爆炸热辐射伤害效应研究 总被引:1,自引:0,他引:1
为了准确预测无约束气云爆炸产生的热辐射伤害效应,利用计算流体力学技术对无约束空间内甲烷与空气预混气云爆炸的非稳态流场进行了数值计算,得到了气云爆炸热辐射伤害效应的分布规律及伤害半径确定方法.研究结果表明:热剂量峰值与气云的质量有关,随距离呈指数衰减规律.与同质量凝聚相炸药相比,气云爆炸的热伤害效应范围更大,热剂量随距离的衰减更缓慢. 相似文献