nSi／pSi1—xGex／nSi晶体管直流特性数值分析

采用一维有限差分方法,对生长在Ｓｉ（００１）衬底上的Ｓｉ１－ｘＧｅｘ应变基区异质结双极晶体管（ＨＢＴ）的直流特性进行了数值分析,给出了高斯掺杂情形下,基区中不同Ｇｅ分布的Ｓｉ１－ｘＧｅｘＨＢＴ的共射极电流放大系数图、Ｇｕｍ－ｍｅｌ图和平衡能带图;与Ｓｉ双极同质结晶体管（ＢＪＴ）的直流特性作了对比,结果表明基区中Ｇｅ的引入有效地改善了晶体管的直流性能;其次对基区中Ｇｅ分布与ｐ型杂质在基区－集电区交界处的不一致进行了模拟,证实了基区杂质向集电区扩散产生的寄生势垒使集电极电流密度下降这一实验结果．     

掩埋式多模干涉型分束器的反射性能

通过束传播方法(BPM)模拟了SiO2基掩埋式波导结构多模干涉(MMI)型分束器的反射性能,模拟结果表明,MMI工作在分束模式时存在最优的多模干涉长度实现最大输出和最小反射,而在合束模式下实现最大输出时反射也达到最大,这是由自映象原理决定的。SiO2基掩埋式波导结构MMI分束器对反射具有良好的抑制作用,其最大反射功率为-60dB。分析表明,多模干涉区末端的界面反射率决定了器件的反射强弱,SiO2基掩埋式波导的界面反射率非常低,这是其低反射的原因。     

基于硅基槽波导的单纤三向滤波器的研究

设计了基于硅基槽波导的微环谐振型单纤三向滤波器。基于电磁场理论得到了二维情形下的硅基槽波导的模场及有效折射率随波长的变化关系,在此基础上,利用硅基槽微环谐振腔谐振波长与微环半径的关系,优化得到了可将1490nm和1550nm两个下载波长分开的谐振环半径,并同时将1310nm波长上传,三个波长信号从不同端口输出,成功地实现了三向器滤波功能。利用传递函数法模拟了所设计的硅基槽微环谐振型三向滤波器的输出光谱,结果显示其串扰可低至-16.9dB。     

阵列波导光栅平坦化的研究

阵列波导光栅的平坦化在实际应用中有很重要的意义.本文系统地研究了阵列波导光栅的平坦化.在输入波导、输出波导、阵列波导输入端与输出端上分别引入了指数型锥形波导.通过改变锥形波导的形状和尺寸来实现平坦化的优化.本文首先从理论上论述了引入指数型锥形波导的输出光谱特性,给出了结构参量的关系表达式,阐明了输入波导处的锥形波导是影响输出光谱平坦化的主要因素,阵列波导和输出波导处的锥形波导对输出光谱的平坦化有一定的影响.其次采用数值模拟的方法模拟了输出光谱,优化了结构参量,总结出了指数型锥形波导对平坦化影响的趋势和规律.模拟结果显示,输出光谱1 dB带宽大于通道间隔的50％,插入损耗从5.2 dB减小到了4.0 dB,串扰小于-30 dB.最后,本文给出了实验结果,插入损耗减小了0.87 dB,串扰减小了3.67 dB,1 dB带宽增加0.1 nm,增加了54.7％.实验结果表明引入指数型锥形波导提高了阵列波导光栅器件的光谱性能.     

16×0.8nm硅基二氧化硅阵列波导光栅设计

给出了更为合理的阵列波导光栅(AWG)的设计原则。在设计时兼顾了输出谱的非均匀性Lu和输出通道数N的要求,克服了设计中可能引起通道数N丢失和不考虑输出谱非均匀性Lu的缺点。用该方法设计了折射率差为0 75%和16×0 8nm的硅基二氧化硅AWG。采用广角有限差分束传播方法(FD BPM)对所设计的AWG进行了输出谱的模拟,得到了插损为 1.5dB、串扰为 48dB、通道非均匀性约为1dB的AWG,设计指标达到了商用要求。     

112 Gbit/s transmitter optical subassembly based on hybrid integrated directly modulated lasers

Based on the hybrid integration technology, an ultra-compact and low cost transmitter optical subassembly module is proposed. Four directly modulated lasers are combined with a coarse wavelength division multiplexer operated at the O-band. The bandwidth for all channels is measured to be approximately 3 GHz. The 112 Gb∕s transmission is experimentally demonstrated for a 10 km standard single mode fiber(SSMF), in which an optical isolator is used for avoiding the back-reflected and scattered light to improve the bit error rate(BER) performance. A low BER and clear eye opening are achieved for 10 km transmission.     

Novel wavelength-accurate InP-based arrayed waveguide grating

A 13-channel, InP-based arrayed waveguide grating （AWG） is designed and fabricated in which the on-chip loss of the central channel is about -5 dB and the crosstalk is less than -23 dB in the center of the spectrum response. However, the central wavelength and channel spacing are deviated from the design values. To improve their accuracy, an optimized design is adopted to compensate the process error. As a result, the central wavelength 1549.9 nm and channel spacing 1.59 nm are obtained in the experiment, while their design values are 1549.32 nm and 1.6 nm, respectively. The route capability and thermo-optic characteristic of the AWG are also discussed in detail.     

Quantum key distribution transmitter chip based on hybrid-integration of silica and lithium niobates

A quantum key distribution transmitter chip based on hybrid-integration of silica planar light-wave circuit (PLC) and lithium niobates (LN) modulator PLC is presented. The silica part consists of a tunable directional coupler and 400-ps delay line, and the LN part is made up of a Y-branch, with electro-optic modulators on both arms. The two parts are facet-coupled to form an asymmetric Mach-Zehnder interferometer. We successfully encode and decode four BB84 states at 156.25-MHz repetition rate. Fast phase-encoding of 0 or $\pi $ is achieved, with interference fringe visibilities 78.53% and 82.68% for states $|+\rangle$ and $|-\rangle$, respectively. With the aid of an extra off-chip LN intensity modulator, two time-bin states are prepared and the extinction ratios are 18.65 dB and 15.46 dB for states $|0\rangle$ and $|1\rangle$, respectively.     

Design and numerical analysis for low birefringence silica on silicon waveguides

A new fabrication technology for three-dimensionally buried silica on silicon optical waveguide based on deep etching and thermal oxidation is presented. Using this method, a silicon layer is left at the side of waveguide. The stress distribution and effective refractive index are calculated by using finite element method and finite different beam propagation method, respectively. The results indicate that the stress of silica on silicon optical waveguide fabricated by this method can be matched in parallel and vertical directions and stress birefringence can be effectively reduced due to the side-silicon layer.     

光纤到户平面光波回路(PLC)光分路器产业化

随着光纤到户(FTTH)国家宽带战略的实施,平面光波回路(PLC)光分路器需求量正显著增加。为此,中国科学院半导体研究所集成光电子学国家重点联合实验室专门组建了研究团队,对平面光波回路(PLC)光分路器产业化进行了专项研究,尤其是对石英基二氧化硅光分路器进行深入研究,并取得了显著成果。本文对这一研究项目的价值和意义进行了阐述,重点介绍了研究工作进展及成效,以及面临的问题,并针对未来发展趋势,提出相应的对策建议。