盐酸伊达比星杂质A的合成工艺优化及其高效液相分析

通过对盐酸伊达比星脱羟基杂质A的合成研究，为盐酸伊达比星的质控标准提供参考。以盐酸伊达比星为起始原料，经过4步反应得到脱羟基杂质A。本文提供了盐酸伊达比星杂质A的制备方法以及高效液相色谱分析方法，为杂质含量控制提供了依据。该工艺可以稳定、快速制备高纯度脱羟基杂质A，制备总收率为57.20%，纯度为57.20%，其结构经¹H NMR， ¹³C NMR和MS(ESI)表征。     

一类可化为一阶线性微分方程的微分方程求解

通过变量变换,将一类非线性微分方程化为一阶线性微分方程,从而求出其通解.     

关于Semigroups of Linear Operators and Applications to Partial Differential Equations的两个注解

指出文献[1]关于Co半群可微性的定理2.4.11的证明过程中一处错误，及关于柯西问题解的指数衰变的定理4.4.1的证明过程中的不妥之处，并给出新的证明。     

Characterization of ZnO:AI films deposited by r.f.magnetron-sputtering at low temperature

Transparent conducting ZnO:AI thin films with good adhesion and Iow resistivity have been prepared on organic substrates and Coming 7059 glass substrates by r.f. magnetron-sputtering technique at Iow substrate temperature (25-210℃). Structural and photoelectric properties of the deposited films are investigated. The deposited films are polycrystalline with hexagonal structure and a preferred orientation with the c-axis perpendicular to the substrate. Only the (002) peak is observed.High quality films with resistivity as Iow as 1.0 x 10- 3Ω@ cm and 8.4 x 10- 4Ω@ cm, the average transmittance over 74% and 85% in the wavelength range of the visible spectrum have been obtained on different substrates.     

Characterizations of Tb:Zn2SiO4 films on silicon wafer prepared by sol-gel dip-coating and solid-phase reaction

Terbium-doped Zn_2SiO_4 films were successfully prepared on Si wafers by a simple sol-gel dip-coating and solid-phase reaction method of ZnO and SiO_2. X-ray diffraction (XRD) and UV－Vis absorption results revealed that films processed below 850℃ were ZnO in wurzite structure, and films processed above 850℃ were Zn_2SiO_4 in wellimite structure. Photoluminescence measurements of the Tb-doped Zn_2SiO_4 films showed two strong emission bands at 490 and 545nm. The photoluminescence lifetime was 4.6ms.     

水下多路水声测量信号光纤传输系统

以一个水声被动测量系统的工程项目为平台，介绍与其配套的水下多路水声测量系统的构成、主要电路环节和工作原理。     

MATLAB软件在信号与系统教学中的应用

本文论述了在信号与系统分析中如何利用MATLAB软件编程使一些运算量较大、抽象的问题变得简单而直观。     

p型导电掺In的SnO_2薄膜的制备及表征

采用溶胶 凝胶提拉法成功地制备了p型导电掺In的SnO2 薄膜 .x射线衍射测试结果表明 ,掺In的SnO2 薄膜保持SnO2 的金红石结构 .吸收谱测试结果表明 ,掺In的SnO2 禁带宽度为 3 8eV .霍尔测量结果表明 ,空穴浓度与热处理温度有很大的关系 ,5 2 5℃为最佳热处理的温度 .铟锡原子比在 0 0 5— 0 2 0范围内 ,空穴的浓度与In的含量有直接的关系 ,并随In含量的增加而增加     

Conservation Laws in sine—Gordon Equation

There are two conservation quantities needed to derive conservation laws of sine-Gordon equation in a frame of laboratory reference.one of them could be derived easily with a standard process,but the other could not .After the gauge transformation e^-iθσ2/2is introduced,we simply obtain the other one without any questionable assumption.     

38CrMnMo钢异常断口的分析

用扫描电镜KYKY－1000、能谱仪观察分析了38CrMnMo钢（调质热处理）拉伸实验后的异常断口，结果表明：钢中冶金夹杂物是导致38CrMnMo钢异常脆性断裂的主要原因。