Effect of Nonradiative Recombination on Carrier Dynamics in GaInNAs/GaAs Quantum Wells

The nonradiative recombination effect on carrier dynamics in GalnNAs/GaAs quantum wells is studied by timeresolved photoluminescence （TRPL） and polarization-dependent TRPL at various excitation intensities. It is found that both recombination dynamics and spin relaxation dynamics strongly depend on the excitation intensity. Under moderate excitation intensities the PL decay curves exhibit unusual non-exponential behaviour. This result is well simulated by a rate equation involving both the radiative and non-radiative recombinations via the introduction of a new parameter of the effective concentration of nonradiative recombination centres in the rate equation. In the spin dynamics study, the spin relaxation also shows strong excitation power dependence. Under the high excitation power an increase of spin polarization degree with time is observed. This new finding provides a useful hint that the spin process can be controlled by excitation power in GaInNAs systems.     

用高速高分辨率PC仪器进行甚低平均功耗I－V曲线测量

在一个ＰＣ基高速高分辨率仪器卡上实现超低平均功耗器件的Ｉ－Ｖ曲线测量．采集５１２个数据只要５１．２μｓ，避免因过高平均功耗而损坏器件．ＰＣ基仪器卡自带时钟和单斜波电压产生器，使用功能为１８ＭＨｚ取样率和１０ｂｉｔ分辨率的Ａ／Ｄ器件和存取时间为１５ｎｓ的缓存存贮器，分辨率优于一般存储示波器，测量系统对ＰＣ／ＸＴ以上的微机兼容．系统还可进行多通道瞬态测量，用于同步分析多通道窄脉冲信号，一个软件包可以完成所有的控制、测量与数据处理．     

(Ga,Mn)As光调制反射光谱

室温下我们研究了稀磁半导体(Ga,Mn)As的光调制反射(PR)光谱,观测到来自样品的Franz-Keldysh振荡(FKO)信号。随着Mn原子浓度的增加,PR线形展宽,但是临界点E₀和E₀+Δ₀没有明显的移动。根据FKO振荡数据,计算得到样品表面电场强度随Mn原子掺杂浓度的增加而增强。测量到与Mn原子掺杂相关的杂质带,其能量位置离GaAs价带边~100 meV。根据样品的表面电场强度和表面耗尽层模型,估算样品的空穴浓度为~10¹⁷cm^-3,较低的空穴浓度可能与样品具有较低的居里温度有关,或测量的PR信号来自于样品中外延层的部分耗尽区域。     

曲肘式机构的优化设计

以功效系数为目标函数,相应地确定了设计变量和约束函数,对塑料注塑机合模机构的参数进行优化计算,提高了机构的综合性能。     

电场调谐InAs量子点激子精细结构劈裂

在低温5K下,采用光致发光光谱及外加偏压调谐InAs量子点激子精细结构劈裂,研究了不同量子点激子的精细结构劈裂值大小,以及垂直电场有效地调谐激子的精细结构劈裂.对于具有较小精细结构劈裂的量子点样品,外加偏压可以使其精细结构劈裂值减小到小于激子的本征光谱宽度,从而实现基于单双激子纠缠态的制备.     

Spatial Interference Effect of Two—Photon in Femtosecond—Pules Pumped Spontaneous Parametric Down—Conversion

We have used the transverse correlated properties of the entangled photon pairs generated in the process of spontaneous parametric down-conversion,which is pumped by a femtosecond pulse laser,to perform Young‘s interference experiment.Unlike the case of a continuous wave laser pump,a broadband pulse laser pump can submerge an interference pattern.In order to obtain a high visibility interference pattern,we used a lens with a tunable focal length and two interference filters to eliminate the effects of the broadband pump laser.It is proven that the process of two-photon direct interference is a post-selection process.     

半无限晶体中慢速运动的表面极化子

本文研究电子与体纵光学声子耦合弱、与表面光学声子耦合强的半无限晶体中的表面极化子的性质.采用改进了的线性组合算符法和微扰法导出了半无限晶体中的慢速运动极化子的有效哈密顿量.在计及电子在反冲效应中发射和吸收的不同波矢的声子之间的相互作用时,讨论了对有效哈密顿量,诱生势和有效质量的影响.对AgBr晶体进行了数值计算,结果表明反冲效应中发射和吸收的不同波矢的声子之间的相互作用对有效质量和诱生势的影响随耦合常数αt的增加而增加,对有效质量的影响随坐标z的增加而减小的更多,对诱生势的影响随z的增加而增加的更多.     

电场调谐InAs单量子点的发光光谱

采用稳态和时间分辨发光光谱,研究了生长在p-i-n二极管结构内的InAs单量子点发光光谱的电场调谐特性.随着电场强度的增加,观察到量子点中激子发光的Stark 效应.通过选择不同波长的激光线激发量子点样品,发现随着电场强度的增加导致量子点发光强度的减弱,这是由于量子点俘获载流子概率的减小所致,而激子寿命的增加源于电场导致激子的Stark效应. 关键词： InAs单量子点 Stark效应 电子-空穴分离     

电场调谐InAs量子点荷电激子光学跃迁

在低温5 K下, 采用光致发光光谱及外加偏压调谐量子点电荷组态研究了InAs单量子点的精细结构和对应发光光谱的偏振性、不同带电荷激子的圆偏振特性. 得出如下结果: 1) 指认InAs单量子点中不同荷电激子的发光光谱和对应的激子本征态的偏振特性; 2) 外加偏压可以调谐量子点的荷电激子的发光光谱; 3) 伴随着电子、空穴的能量弛豫, 电子的自旋弛豫时间远大于空穴的自旋弛豫时间. 关键词： InAs量子点 激子 荧光光谱 电场调谐     

Temperature Dependence of Photoluminescence from Single and Ensemble InAs/GaAs Quantum Dots

We investigate the temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots systematically. As temperature increases, the exciton emission peak for single quantum dot shows broadening and redshift. For ensemble quantum dots, however, the exciton emission peak shows narrowing and fast redshift. We use a simple steady-state rate equation model to simulate the experimental data of photoluminescence spectra. It is confirmed that carrier-phonon scattering gives the broadening of the exciton emission peak in single quantum dots while the effects of carrier thermal escape and retrapping play an important role in the narrowing and fast redshift of the exciton emission peak in ensemble quantum dots.