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丝瓜种子萌芽及子叶生长过程中谷氨酰胺合成酶同工酶的变化 总被引:2,自引:1,他引:1
测定了丝瓜种子萌芽及子叶不同生长阶段的谷氨酰胺合成酶(GS)的活性及其同工酶的变化.除了发育上的变化外,光和外源氮对GS活性及其同工酶影响也是显著的.无论外源氮(N)是否存在,GS活性在种子萌芽和子叶生长初期是逐渐升高的,于第6天达到最大,其后活性逐步降低.在光照下,外源氮对GS1诱导作用大于GS2;在无氮下,光对GS2的刺激大于GS1;在暗处,外源氮对GS1和GS2两者都有诱导作用. 相似文献
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论中国养老模式的转型 总被引:1,自引:0,他引:1
养老模式是老年人在人生最后阶段,社会对其退休后诸角色所定的理想生活样式,叵映着特定社会对老年人的认识、态度、管理和要求等方面的内容。内容决定形式,形式服从内 相似文献
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1 INTRODUCTION The 10-benzylidene anthrones which are important intermediate for organic syntheses[1~3] usually possess thermochromism[4] and photo- chromism[5], and have been found recently to have evident anti-cancer activity[6]. We found that the substituents in the phenyl ring will affect the bioactivity of those compounds. For more deeply investigating the structure-activity relationships (SAR) and understanding interactions between the three dimensional structure of the compound … 相似文献
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报道了山东蓝宝石的部分物理—化学性质和优化处理结果。中子活化分析得出,平均全铁含量约为1%,钛约为0.04%。穆斯堡尔谱学分析表明,大多数铁处于二价态。高压电子显微镜分析给出四种原生包体:钛铁矿FeOTiO2,假板钛矿Fe2TiO5,钙钛矿CaTiO3及非晶态相。优化处理实践证明,经高温氧化处理后,山东蓝宝石的品质能够得到显著改善,表现为透明度提高,颜色变浅。相应的部分内在变化为Fe2+/Fe3+值降低,非晶态相初晶化,钛铁矿FeOTiO2消失,析出钛酸铝Al2TiO5和铁铝氧化物Al2O3Fe2O3。要获得纯正的蓝色,须严格控制处理温度和相应的氧分压,尽量使Fe2+/Fe3+值趋近于1。为获得优质蓝宝石,应对黑色本底作深入研究。 相似文献
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电沉积法制备介孔TiO_2/CdS薄膜光电极 总被引:2,自引:0,他引:2
采用阴极恒电位沉积法,在介孔TiO2薄膜上制备了介孔TiO2/CdS薄膜光电极,用XRD,SEM,Raman,SPS和UV-Vis等多种手段对薄膜电极进行了表征.结果表明,CdS成功沉积到介孔TiO2的表面和孔道内,形成了异质结结构.通过光电流作用谱考察了该复合体薄膜电极的光电性能,结果表明,与单纯的介孔TiO2薄膜相比,其光电转换效率显著提高,这是由于CdS具有吸收可见光的特性以及CdS与介孔TiO2形成异质结从而使得光生载流子更容易分离的结果. 相似文献
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制备了可用作氨基酸及小分子聚合物的MALDI-FTMS分析基质的β-环糊精包覆多壁碳纳米管.通过引入β-环糊精改善其碳纳米管亲水性.所制备的β-环糊精包覆多壁碳纳米管的扫描电镜图表明,该碳纳米管呈现纳米带状结构.与通常的氧化碳纳米管相比,所制备的β-环糊精改性CNT具有更低的背景信号.进一步采用氨基酸及聚乙二醇等小分子化合物对所制备的碳纳米管进行评价,得到很强的氨基酸及聚乙二醇的碱金属离子加合峰,表明该材料可使小分子化合物解吸离子化,且背景干扰小不会影响到小分子化合物检测.由此可见,制备的β-环糊精包覆多壁碳纳米管适于小分子化合物的MALDI-MS分析. 相似文献
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本文介绍声表面横波谐振器的设计及制作,并报导了我们研制的频率为1.1GHz,插损3dB,有载Q值大于2000的声表面横波谐振器及其应用。 相似文献
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Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation
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The degradations in NPN silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current (IB), current gain (β), neutral base recombination (NBR), and Early voltage (VA) were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail. 相似文献