用不同靶材制备B-C-N薄膜及其红外表征

采用射频磁控溅射方法,分别利用六方氮化硼(h-BN)、硼(B)和石墨(C)靶,在氩气和氮气的氛围中,沉积B-C-N薄膜.傅里叶变换红外光谱(FTIR)分析表明:在1200～1800cm-1和1000～1750cm-1处出现了较宽的吸收峰;在2200cm-1处出现了CN键的特征吸收峰.表明在沉积的薄膜中,C原子与N原子相结合.分别溅射C和h-BN靶,红外光谱分析表明,B—C键在1100cm-1处未产生吸收峰,即利用h-BN和C靶沉积的B-C-N薄膜倾向于相分离,利用B和C靶沉积的B-C-N薄膜中的原子实现了原子量级的化合.     

Preparation and Characteristics of GaN Films on Freestanding CVD Thick Diamond Films

Prefer-oriented and fine grained polycrystalline GaN films are prepared by plasma enhanced metal organic chemical vapour deposition on nucleation surfaces of freestanding thick diamond films. The characteristics of the GaN films are characterized by x-ray diffraction, reflection high energy electron diffraction and atomic force microscopy. The results indicate that the structure and morphology of the films are strongly dependent on the deposition temperature. The most significant improvements in morphological and structural properties of GaN films are obtained under the proper deposition temperature of 400°C.