DMFCs用磺化聚醚醚酮/功能化二氧化硅复合质子交换膜

在磺化度(DS)为55.1%的磺化聚醚醚酮(SPEEK)中掺杂功能化二氧化硅(吸湿性SiO2溶胶及带有磺酸基团的二氧化硅(SiOx-S)粒子)制备SPEEK/SiO2和SPEEK/SiOx-S复合质子交换膜.SiO2和SiOx-S的掺杂能有效提高复合膜的抗溶胀、阻醇性能及高温低湿情况下的电导率.纯SPEEK膜在80℃溶胀为52.6%,而SiO2和SiOx-S掺杂量为15%的复合膜在此温度下分别仅有26.2%和27.3%的溶胀.在室温至80℃范围内,SPEEK/SiO2(20 wt%)和SPEEK/SiOx-S(20 wt%)复合膜的甲醇透过系数比Nafion115膜小近2个数量级.在120℃、相对湿度(RH)为40%情况下,SPEEK纯膜的电导率仅为2.6×10-4S.cm-1,SPEEK/SiO2(20 wt%)复合膜约为2.0×10-3S.cm-1,而SPEEK/SiOx-S(20 wt%)复合膜高达1.0×10-2S.cm-1,与Nafion115相当.SPEEK/SiO2(20 wt%)和SPEEK/SiOx-S(20 wt%)2种复合膜的尺寸稳定性较高,膜电极无催化剂与膜分离现象,其DMFCs单电池性能好于SPEEK膜.     

壳聚糖-聚醚共混超滤膜的制备与性能

研究了壳聚糖与聚醚共混超滤膜的制备工艺,探索了该超滤膜对发酵产物十二烷基二元酸中蛋白南的分离性能。实验表明,壳聚糖－聚醚共混超滤膜可用作蛋白质亲和分离膜,当膜孔径在１０～５０ｎｍ之间时,对二元酸中蛋白质的截留率大于９５％。     

Growth and characterization of GaAs/InxGa1-xAs/GaAs axial nanowire heterostructures with symmetrical heterointerfaces

We report on the Au-assisted vapour-liquid-solid （VLS） growth of GaAs/InxGal xAs/GaAs （0.2 ≤ x ≤1） axial double-heterostructure nanowires on GaAs （ 111 ） B substrates via the metal-organic chemical vapor deposition （MOCVD） technique. The influence of the indium （In） content in an Au particle on the morphology of nanowires is investigated systematically. A short period of pre-introduced In precursor before the growth of InxGal xAs segment, coupled with a group III precursor interruption, is conducive to obtaining symmetrical heterointerfaces as well as the desired In/Ga ratio in the InxGa1-xAs section. The nanowire morphology, such as kinking and tapering, are thought to be related to the In composition in the catalyst alloy as well as the VLS growth mechanism.     

离心泵常见故障分析与处理

随着化工企业的不断发展,对离心泵的要求不断增加,离心泵作为输送物料的一种转动设备,对连续性较强的化工装置生产尤为重要,因此需要很多的要求输送高温介质及高扬程的离心泵。在离心泵运转的过程中,难免会出现各种各样的故障。因此本文将阐述如何在发生故障时及时准确的判断处理故障,以保证生产平稳运行。     

Growth and characterization of straight InAs/GaAs nanowire heterostructures on Si substrate

Vertical InAs/GaAs nanowire (NW) heterostructures with a straight InAs segment have been successfully fabricated on Si (111) substrate by using AlGaAs/GaAs buffer layers coupled with a composition grading InGaAs segment. Both the GaAs and InAs segments are not limited by the misfit strain induced critical diameter. The low growth rate of InAs NWs is attributed to the AlGaAs/GaAs buffer layers which dramatically decrease the adatom diffusion contribution to the InAs NW growth. The crystal structure of InAs NW can be tuned from zincblende to wurtzite by controlling its diameter as well as the length of GaAs NWs. This work helps to open up a road for the integration of high-quality III-V NW heterostructures with Si.     

Growth and characterization of GaAs/In_χGa_(1-χ)As/GaAs axialnanowire heterostructures with symmetrical heterointerfaces

We report on the Au-assisted vapour-liquid-solid(VLS) growth of GaAs/InxGa1-xAs/GaAs(0.2 ≤ x ≤ 1) axial double-heterostructure nanowires on GaAs(111) B substrates via the metal-organic chemical vapor deposition(MOCVD) technique.The influence of the indium(In) content in an Au particle on the morphology of nanowires is investigated systematically.A short period of pre-introduced In precursor before the growth of InxGa1-xAs segment,coupled with a group III precursor interruption,is conducive to obtaining symmetrical heterointerfaces as well as the desired In/Ga ratio in the InxGa1-xAs section.The nanowire morphology,such as kinking and tapering,are thought to be related to the In composition in the catalyst alloy as well as the VLS growth mechanism.     

Mie谐振耦合的亚波长金属孔宽带高透射传输

表面等离激元共振激发的亚波长金属孔透射较Bethe理论有大幅度的提高,然而,由于共振对频率的敏感性以及金属在光频的高损耗特性,表面等离激元共振难以实现亚波长金属孔的宽带高透射传输.本文采用放置在金属孔两边的硅纳米颗粒的Mie谐振耦合取代表面等离激元共振,实现亚波长金属孔的宽带高透射传输.全波仿真结果表明,采用Mie谐振耦合的亚波长金属孔(r/λ=0.1)光传输,透射系数超过90%的带宽达到65 nm,与表面等离激元共振诱导的透射增强相比,峰值增高了1.5倍,3 dB带宽拓宽了17倍.根据耦合模理论,建立了Mie谐振耦合亚波长金属孔透射的等效电路模型,并在临界耦合状态下反演出电路模型中的元件参数值.进一步研究发现,仅通过改变等效电路模型中的耦合系数,就可全面揭示Mie谐振耦合亚波长金属孔透射的传输规律,并得到与全波电磁仿真完全一致的结果,从而找到光与放置硅纳米颗粒的亚波长金属孔相互作用的数学表达,也给予人们在光学领域按照电路设计方法构建相应功能模块的启示.     

在Visual C++6.0中底层编程实现串口通信的方法

用MSComm控件实现串口通信时，必须借助对话框，这样必然降低了程序的速度．介绍了在Visual C 6.0中不用MSComm控件而直接从底层编程实现串口通信的方法，成功解决了这个问题．并且，文章还涉及到如何应用多线程技术监视串口的通信事件．     

纳米级分离技术研究--中空纤维分离膜的制备和应用

研究了中空纤维膜分离技术和纺丝制膜原液的配制原理,尤其是复合中空纤维膜纺丝制膜技术,结果表明,通过复合技术可以得到高分离功能、高透过通量、高抗污染性、高许能可迅速恢复,说明本文提出的内凶双洗方法清洗效果显著。     

基于FPGA的高速图像数据存储系统

为满足高速全景图像的实时无损存储的需求,设计了基于现场可编程门阵列(field-programmable gate array,FPGA)的SATA阵列和TF卡阵列嵌入式存储系统。用2片FPGA作为控制器,分别负责全景图像的采集处理任务与存储传输任务,设计了8层PCB板级硬件系统并对高速数字信号线进行了细致的阻抗匹配,并设计了支持SD3.0协议的RTL级控制器。实际测试TF卡阵列存储平均速度为227.36 MB/s,峰值速度达293 MB/s,实现了数据的高速存储功能。