双极晶体管中子辐照后的高温退火特性

利用硅双极晶体管在线监测中子注量,其直流增益和损伤常数是作为探测器指标的重要参数。高温退火可使受到中子辐照的双极晶体管性能部分恢复,进而可以重复使用。开展高温退火特性研究,分析双极晶体管直流增益的恢复程度以及损伤常数的重复性。在快中子脉冲堆上对贴片型3DG121C双极晶体管进行三轮中子辐照,每轮辐照累计注量2.64×10~(13)cm~(-2)。经过第一轮中子辐照后,双极晶体管直流增益下降至辐照前的40%,经过180℃连续24 h的高温退火后,直流增益恢复至辐照前的67%;经过第二轮辐照后,直流增益下降至第二轮辐照前的50%,在相同条件下退火后,直流增益恢复至第二轮辐照前的73%;经过第三轮辐照后,直流增益下降至第三轮辐照前的58%,在相同条件下退火后,其直流增益恢复至第三轮辐照前的87%。三轮实验结果表明:双极晶体管直流增益倒数随辐照中子注量变化的线性关系基本一致,具体表现为其损伤常数具有很好的重复性。利用该高温退火特性,将双极晶体管作为中子注量探测器应用于快中子脉冲堆中子注量在线监测,监测结果与活化箔结果基本吻合。     

Transmission of 18 keV negative ions Cl through nanocapillariesin Al2O3 membrane

We investigate the angular distribution of the transmitted 18keV negative ions Cl^- through Al₂O₃ nanocapillaries of 50 nm in diameter and 10 μm in length. Elastic scattering ions and inelastic scattering ions are obtained simultaneously. The experimental result is partially consistent with the guiding effect. We can qualitatively explain our experimental result through a dynamic process.     

Experimental study of cross-section ratios in the collisions of Cq＋ and oq＋（q= 1-4） on atomic helium in strong-interaction region

We have measured the cross-section ratios of helium induced by C^q+ and O^q+ (q=1-4) in an energy range from 20 keV/amu to 500 keV/amu, and obtained the two-dimensional spectra by employing the coincidence method combined with the MPA-3 data acquisition system. Hence, we obtain the ratios of total single-ionization cross-sections (SI, SC, SLSI, and DLSI), total double-ionization cross-sections (DI, DC, TI, SLDI, and DLDI) and cross-sections of every process (SI, SC, SLSI, DLSI, DI, DC, TI, SLDI, and DLDI), which induce the single-ionization and double-ionization, to the total cross sections respectively. The competitive relations between the reaction-channels and the experimental data law of each reaction-channel are revealed explicitly, and the qualitative explanations involved in those results are also presented accordingly.     

不同顺序中子/γ辐照对双极器件电流增益的影响

利用CFBR-Ⅱ快中子反应堆(中国第二座快中子脉冲堆)和60Co装置开展不同顺序的中子/γ辐照双极晶体管的实验。在集电极-发射极电压恒定条件下,测量了双极晶体管电流增益随集电极电流的变化曲线,研究不同顺序中子/γ辐照对双极晶体管电流增益的影响。分析实验结果发现,集电极-发射极电压一定时,集电极电流极低情况下电流增益退化比较大,随集电极电流增加电流增益逐渐减小;就实验选中的两类晶体管而言,先中子后γ辐照造成双极晶体管电流增益的退化程度大于先γ后中子辐照,而且PNP型晶体管比NPN型晶体管差异更明显。本文进行了双极晶体管电离/位移协同辐照效应相关机理的初步探讨。