一类血吸虫病模型Hopf分支的频域分析

运用频域上的分支理论研究了一类血吸虫病传播模型的Hopf分支动态，严格证明了Hopf分支的存在性，运用四阶调和平衡方法推导出由Hopf分支产生的周期轨的近似解析表达式、频率和振幅。研究结果表明，被感染的钉螺由潜伏期进入易传染期的几率δ对人体内寄生虫数量有重要影响。     

缺陷单层和双层石墨烯的拉曼光谱及其激发光能量色散关系

拉曼光谱作为一种无破坏性、快速且敏锐的测试技术已经成 为表征石墨烯样品和研究其缺陷的最重要的实验手段之一. 本论文用离子注入在单层和双层石墨烯中产生缺陷, 并利用拉曼光谱研究了存在缺陷时单层和双层石墨烯的一阶和二阶拉曼模, 单层石墨烯的D模为双峰结构, 而双层石墨烯的D模具有四峰结构. 同时, 利用四条激光线系统地研究了本征和缺陷单层和双层石墨烯的拉曼峰频率的激发光能量依赖关系, 并基于石墨材料的双共振拉曼散射机理指认了离子注入后样品各拉曼峰的物理根源. 关键词： 石墨烯 缺陷 拉曼光谱 能量色散关系     

两步氧化法制备β-Ga2O3薄膜

为获得高质量的β-Ga_2O_3薄膜,对传统的GaN薄膜高温氧化方法进行了优化。我们通过对GaN薄膜分别进行一步或两步高温氧化的方法制备了β-Ga_2O_3薄膜,并通过X射线衍射、场发射扫描电子显微镜、拉曼光谱等对制备的样品进行了测试、对比与分析。结果表明,950℃下GaN薄膜无法完全氧化,而直接1 150℃氧化得到的样品并没有明显的晶向。相比之下,通过两步氧化法,GaN薄膜被完全氧化,且得到的β-Ga_2O_3薄膜具有明显的沿■方向的晶向,样品表面显示出明显的纳米线结构。最佳的氧化时间为在950℃下氧化3 h之后在1 150℃下氧化1 h,此时得到样品的纳米线结构最明显,其纳米线的直径约为30～40 nm。拉曼光谱测试证实了该条件下获得的样品具有较高的晶体质量。通过分析不同样品结构以及形貌特性,我们发现不同温度下的不同氧化模式是导致该结果的主要原因。     

High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area

Ultraviolet(UV) detectors with large photosensitive areas are more advantageous in low-level UV detection applications. In this Letter, high-performance 4 H-SiC p-i-n avalanche photodiodes(APDs) with large active area(800 μm diameter) are reported. With the optimized epitaxial structure and device fabrication process,a high multiplication gain of 1.4 × 10~6 is obtained for the devices at room temperature, and the dark current is as low as ～10 p A at low reverse voltages. In addition, record external quantum efficiency of 85.5% at 274 nm is achieved, which is the highest value for the reported Si C APDs. Furthermore, the rejection ratio of UV to visible light reaches about 10~4. The excellent performance of our devices indicates a tremendous improvement for largearea SiC APD-based UV detectors. Finally, the UV imaging performance of our fabricated 4 H-SiC p-i-n APDs is also demonstrated for system-level applications.     

氢终止金刚石表面的形成机理

为考察金刚石形成氢终止表面的反应机制,采用微波氢等离子体处理以及电阻丝氢气气氛加热处理进行对比研究.利用光发射谱(OES)和漫反射傅里叶变换红外光谱(DRIFTS)分别表征了微波氢等离子体中的活性基团和金刚石表面氢终止浓度.结果表明,微波氢等离子体环境下,随着衬底温度、等离子体密度和能量的增加,温度至700 ℃ (800 W/3 kPa)时,等离子体中出现了明显的CH基团;相应地,金刚石表面氢终止浓度随温度、等离子体密度和能量的增加而增加.采用氢气气氛下电阻丝加热的方法同样形成了氢终止金刚石表面,表明微波等离子体处理金刚石表面形成氢终止主要源于由温度控制的表面化学反应,而非等离子体的物理刻蚀作用.氧终止金刚石表面形成氢终止的机制是表面C=O键在高于500 ℃时分解为CO,相应的悬挂键由氢原子或氢分子占据.     

High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate

In this paper,high temperature direct current(DC) performance of bilayer epitaxial graphene device on SiC substrate is studied in a temperature range from 25℃ to 200℃.At a gate voltage of-8 V(far from Dirac point),the drainsource current decreases obviously with increasing temperature,but it has little change at a gate bias of +8 V(near Dirac point).The competing interactions between scattering and thermal activation are responsible for the different reduction tendencies.Four different kinds of scatterings are taken into account to qualitatively analyze the carrier mobility under different temperatures.The devices exhibit almost unchanged DC performances after high temperature measurements at 200℃ for 5 hours in air ambience,demonstrating the high thermal stabilities of the bilayer epitaxial graphene devices.     

Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AIN/GaN heterostructure field-effect transistors

By making use of the quasi-two-dimensional （quasi-2D） model, the current-voltage （l-V） characteristics of In0AsA10.82N/A1N/GaN heterostructure field-effect transistors （HFETs） with different gate lengths are simulated based on the measured capacitance-voltage （C-V） characteristics and I-V characteristics. By analyzing the variation of the electron mobility for the two-dimensional electron gas （2DEG） with electric field, it is found that the different polarization charge distributions generated by the different channel electric field distributions can result in different polarization Coulomb field scatterings. The difference between the electron mobilities primarily caused by the polarization Coulomb field scatterings can reach up to 1522.9 cm2/V.s for the prepared In0.38AI0.82N/A1N/GaN HFETs. In addition, when the 2DEG sheet density is modulated by the drain-source bias, the electron mobility presents a peak with the variation of the 2DEG sheet density, the gate length is smaller, and the 2DEG sheet density corresponding to the peak point is higher.     

黄粉虫粪在黄瓜育苗中的应用

采用在育苗营养土中搀入黄粉虫粪的方法营养土中黄粉虫粪搀入量对马坊营旱黄瓜幼苗生长的影响。结果表明:黄粉虫粪与营养土按1∶160～320(体积比)混配的基质进行黄瓜育苗,能促进幼苗生长,显著提高幼苗简单指标、相对指标和复合指标的值。     

图书馆智慧服务之我见

在信息网络环境下,图书馆应把智慧服务作为图书馆的核心定位,作为图书馆智慧服务的主体图书馆员应能够充分利用自身特长,全身心地服务于图书馆,为社会创造更多的物质财富和精神财富。本文主要探讨了智慧服务特征及如何实现智慧服务等问题。     

C程序设计课程实践教学体系的研究与实践

C程序设计是一门实践性很强的课程,但在实践教学的过程中发现很多问题。笔者结合多年的教学实践,分析了目前实践教学中存在的问题,提出了改进实践内容、合理的安排理论和实践,建立小组学习机制等方法。实践证明,对实践教学的改进有效地提高了学生的实践水平,取得了良好的教学效果。