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高温固相法合成Sr3 SiO5:Eu2+过程中,杂质相Sr2 SiO4:Eu2+的存在会不同程度影响Sr3 SiO5:Eu2+的光致发光性能及余辉性能。本文通过压片烧结和燃烧法两种方法制备Sr3 SiO5:Eu2+,结合热重-差热分析和X射线衍射分析,研究了Sr3 SiO5:Eu2+在合成过程中的相变化规律以及动力学过程。研究表明:原料与坩埚的接触处形成的界面以及原料在升温过程经过Sr2 SiO4:Eu2+的合成温度区间是导致杂质相产生的主要原因。在升温过程中,当温度经过1200℃左右的温度区间时,由于原料与坩埚接触处可以看作是两组不同物质的分界面,Sr2 SiO4:Eu2+的合成首先在该分界面处合成,而更多的原料需要扩散通过生成物层才能进一步反应;但随着温度的升高,原料随后进入Sr3 SiO5:Eu2+的合成过程,从而导致了Sr2 SiO4:Eu2+杂质相的生成。 相似文献
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稀土或过渡金属离子掺杂荧光材料因其环保、易于制备、高效率、低成本、长发光寿命、全光谱、高亮度等性能在多重防伪、光学信息存储、温度传感等众多领域具有广泛的应用,特别是在LED照明领域。然而,荧光材料热稳定性差是阻碍其快速发展的核心问题。近年来,关于在热扰动作用下,缺陷态对载流子的俘获及释放过程,作为抑制LED用荧光材料热猝灭效应的有效途径被广泛研究。本文主要概述了LED用荧光材料中缺陷态对其热稳定性影响的研究现状,以及缺陷态作为陷阱中心对载流子的俘获、释放及其抑制LED用荧光材料热猝灭效应的机理,并对当前研究中存在的问题进行了总结和展望。 相似文献
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Photoluminescence characteristics and energy transfer between Bi~(3+) and Eu~(3+) in Na_2O–CaO–GeO_2–SiO_2 glass 下载免费PDF全文
We report the photoluminescence(PL) of Eu^3+-doped glass with Bi^3+as a sensitizer. The specific glass system with the strong enhancement of the red emission of Eu3+is obtained by adding a small number of Bi3+ions instead of increasing the Eu^3+ concentration. The emission band of Bi3+overlaps with the excitation band of Eu^3+ and the lifetime decay curves,resulting in a very efficient energy transfer from Bi^3+ to Eu^3+. The probability of energy transfer is strongly dependent on Bi^3+ concentration. In addition, the intensity of 4f–4f transition is much stronger than that of a charge-transfer(CT) band in the excitation spectrum, which indicates that the Na2O–Ca O–Ge O2-Si O2 glass is a suitable red-emitting phosphor with high stability as a candidate for light-emitting diodes(LEDs). 相似文献
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A novel strong green phosphor: K3Gd(PO4)2:Ce^3+, Tb^3+ for a UV-excited white light-emitting-diode 下载免费PDF全文
A series of K3Gd1-x-y(PO4)2:xCe^3+, yTb^3+ phosphors are synthesized by the solid-sate reaction method. X-ray diffraction and photoluminescence spectra are utilized to characterize the structures and luminescence properties of the as-synthesized phosphors. Co-doping of Ce^3+ enhances the emission intensity of Tb^3+ greatly through an efficient energy transfer process from Ce^3+ to Tb^3+. The energy transfer is confirmed by photoluminescence spectra and decay time curves analysis. The efficiency and mechanism of energy transfer are investigated carefully. Moreover, due to the non- concentration quenching property of K3Tb(PO4)2, the photoluminescence spectra of K3Tb1-x(PO4)2:xCe^3+ are studied and the results show that when x = 0.11 the strongest Tb^3+ green emission can be realized. 相似文献
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在推进人类几千年的文明中,科学技术的作用"一枝独秀".但是,随着社会文明的不断发展,科学技术在缔造了无数的辉煌和繁荣的背景下,它自身也愈来愈陷入让人类理性置疑最深的困境和危机之中.人类社会的可持续发展问题的解决仍然离不开科学技术的支持.问题的关键在于寻找一条科学技术合理辅佐人类文明进步的道路.本文认为"科学技术可持续发展"是应时而生的合理的观点;同时本文主要尝试分析了"科学技术可持续发展"的几点理由,并认为坚持"科学技术可持续发展"的观点,人类可以在科学技术的发展道路上和在解决社会可持续发展的问题中游刃有余地合理使用科学技术这把"双刃剑". 相似文献
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The structure and photoluminescence (PL) properties of Sr3SiO5 : Sm3+ and Li+-doped Sr3SiO5 : Sm3+ red-emitting phosphors were investigated. Samples were prepared by the high-temperature solid-state method. PL spectra show that the concentration quenching occurs when the Sm3+ concentration is beyond 1.3 mol% in Sr3SiO5 : Sm3+ phosphor without doping Li+ ions. The concentration-quenching mechanism can be explained by the electric dipole-dipole interaction of Sm3+ ions. The incorporation of Li+ ions into Sr3SiO5 : Sm3+ phosphors, as a charge compensator, improves the PL properties. The lithium ions also suppress the concentration quenching in Sm3+ with concentration increased from 1.3 mol% to 1.7 mol%. 相似文献
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通过高温固相法制备出Sr0.98-xAl2O4:0.02Eu2+,xTm3+(x=0,0.01,0.02,0.03,0.04,0.05)系列样品,并对其光激励和热释光性能进行了研究。在SrAl2O4:Eu2+原有陷阱能级结构的基础上,通过Tm3+的掺杂引入了更深的陷阱TB,并增加原有陷阱TA浓度,进而优化了材料的光存储容量及光激励特性。对比研究了系列样品的初始光激励发光强度和热释光强度随着Tm3+掺杂量的变化规律,证实陷阱TB为光激励发光提供了有效俘获中心。当Tm3+的掺杂摩尔分数x=0.03时,材料中的陷阱TB的浓度达到最高值,同时光激励发光强度最大。对比Tm3+共掺前后热释光图谱,通过Chen's半宽法计算出了引入陷阱TB的陷阱深度。实验结果证实材料中TB的浓度对其光激励发光性能起着决定性的作用。在980 nm激发下,由深陷阱TB释放出来的电子可以再次被浅陷阱TA俘获,这种浅陷阱TA的再俘获效应在光激励发光过程中表现为光激励余辉现象。 相似文献
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采用燃烧法制备了Gd2O3:Sm3 和Ag 离子掺杂的Gd2O3:Sm3 纳米晶材料,根据X射线衍射图谱确定所得纳米样品为纯立方相.在室温下,用275 nm光激发各样品时,可观察到来自Sm3 离子强的荧光发射线,其主发射峰位置分别位于560、602、650 nm处,分别对应着Sm3 离子的4G5/2→6H5/2, 4G5/2→6H7/2和4G5/2→6H9/2的电子跃迁,其中以4G5/2→6H7/2跃迁的光谱强度最大.实验表明掺入Ag 离子可使Sm3 离子的荧光发射强度显著增强.通过对样品的XRD、TEM和激发光谱、发射光谱的研究,分析了引起样品荧光强度变化的原因. 相似文献