非晶硅薄膜的低温快速晶化及其结构分析

在镀铝的廉价玻璃衬底上高速沉积的非晶硅薄膜在不同的温度下退火10min.退火温度为500℃时,薄膜表面形成了硅铝的混合相,非晶硅薄膜开始呈现了晶化现象 退火温度为550℃时,大部分(约80%)的非晶硅晶化为多晶硅,平均晶粒尺寸为500nm 退火温度为600℃时,几乎所有的非晶硅都转化为多晶硅,其平均晶粒尺寸约为15μm.     

Low-Temperature Growth of Polycrystalline silicon Films by SiCl4／H2 rf Plasma Enhanced Chemical Vapour Deposition

Polycrystalline silicon film was directly fabricated at 200℃ by the conventional plasma enhanced chemical vapour deposition method from SiCl4 with H2 dilution. The crystallization depends strongly on the deposition power.The maximum crystMlinity and the crystalline grain size are over 80% and 200—50Onm, respectively. The results of energy dispersive spectroscopy and infrared spectroscopy measurements demonstrate that the film is mostly composed of silicon, without impurities such as Cl, N, C and bonded H. It is suggested that the crystallization at such a low temperature originates from the effects of chlorine, i.e., in-situ chemical, etching, in-situ chemical cleaning, and the detachment of bonded H.     

PCVD过程中的等离子体诊断

本文综述了ＰＣＶＤ过程中等离子体各种粒子和基团的诊断技术和方法。结合我们的研究工作，着重分析诊断技术在发展过程中所碰到的难题及其解决办法和仍待解决的问题。     

用SiCl4-H2低温沉积多晶硅薄膜微结构的Raman分析

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The reliability of measurements on electron energy distribution function in silane rf glow discharges

Electron energy distribution function (EEDF) is a key parameter of plasmas, which is directly proportional to the second derivative of the probe I-V characteristics. Because of an amplifying effect of unavoidable noises in the experimental probe I-V curves during the derivation process, the experimental I-V curves should be smoothed before performing the numerical derivation. This paper investigates the effect of adjustable factors used in the smoothing process on the deduced second derivative of the I-V curves, and an optimum group of the adjustable factors is selected to make the rms deviation of the smoothed I-V curves from the measured curves less than 1%. A simple differentiation circuit is designed and used to measure the EEDF parameter straightforwardly. It is the first time, so far as we know, to measure the EEDF parameters simultaneously by means of both numerical and circuit derivative methods under the same discharge conditions and on the same discharge equipment. The deviation between two groups of mean electron energy E and electron density n_e obtained by the above different methods is within about 7%. This apparently improves the reliability of the measurements of the EEDF parameters.     

基于过程蓝图的参数化重复代码检测技术研究

通过引入过程蓝图改进参数化重复代码的检测方法,降低原检测方法的空间复杂度,并避免将程序源码变换为后缀树这一复杂过程,为自动重构定位提供更有效的技术.     

多晶硅薄膜低温生长中晶粒大小的控制

以SiCl4H2为气源,用等离子体增强化学气相沉积(PECVD)方法低温快速沉积多晶硅薄膜.实验发现,在多晶硅薄膜的生长过程中,气相空间各种活性基团的相对浓度是影响晶粒大小的重要因素,随功率、H2/SiCl4流量比的减小和反应室气压的增加,晶粒增大.而各种活性基团的相对浓度依赖于PECVD工艺参数,通过工艺参数的改变,分析生长过程中空间各种活性基团相对浓度的变化,指出“气相结晶”过程是晶粒长大的一个重要因素. 关键词： 气相结晶 多晶硅薄膜 晶粒生长 SiCl4     

SnO_2纳米晶的湿敏特性研究

采用溶胶-凝胶法制备SnO2纳米晶薄膜,并对其进行表征;初步研究SnO2纳米晶薄膜的阻-湿特性并计算其湿滞,得出:SnO2纳米晶薄膜随着晶粒尺寸的减小,其感湿灵敏度有所增大且湿滞变小.     

a-SiO_xN_y薄膜的红光发射能级

在ＰＥＣＶＤ法制备的ａ－ＳｉＯｘＮｙ薄膜中首次观察到分立能级的红光发射,采用荧光激发谱研究了发光能级与其它能级之间的相互关系,建立了产生光跃迁的能级模型．     

高温高压铝电解电容器工作电解液的研制

研制了一种耐高温高压铝电解电容器的工作电解液,对采用该配方制成的电容器样品的电性能进行检测,证实其能在125℃高温、400 V高压条件下稳定工作;并讨论了电解液添加剂对样品性能的影响.