在发展循环经济中做强做大企业--四川广旺集团公司构建循环经济产业链

近年来,作为四川省重要能源基地的四川广旺集团公司以"发展循环经济"为指导思想,实施"以煤为主"向"多业并举"的战略转移,按照"减量化、再利用、再循环"三大原则进行资源综合利用,培育形成相对闭合循环的产业经济链,实现了经济效益、生态效益和社会效益的有机结合和相互促进,形成煤业、电力、水泥、冶炼、旅游五大产业格局,由传统的单一资源型国有企业转变为多业并举、可持续发展的综合型企业、由全省扶贫解困企业转变为重点优势和骨干企业,进入了国家大型工业企业行列.     

A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer

A novel structure is proposed for doubling the vertical breakdown voltage of silicon-on-insulator(SOI) devices. In this new structure, the conventional buried oxide(BOX) in an SOI device is split into two sections: the source-section BOX and the drain-section BOX. A highly-doped Si layer, referred to as a non-depletion potential-clamped layer(NPCL), is positioned under and close to the two BOX sections. In the split BOXes and the Si region above the BOXes, the blocking voltage(BV) is divided into two parts by the NPCL. The voltage in the NPCL is clamped to be nearly half of the drain voltage. When the drain voltage approaches a breakdown value, the voltage sustained by the source-section BOX and the Si region under the source are nearly the same as the voltage sustained by the drain-section BOX and the Si region under the drain. The vertical BV is therefore almost doubled. The effectiveness of this new structure was verified for a P-channel SOI lateral double-diffused metal-oxide semiconductor(LDMOS) and can be applied to other high-voltage SOI devices. The simulation results show that the BV in an NPCL P-channel SOI LDMOS is improved by 55% and the specific on-resistance(Ron,sp) is reduced by 69% in comparison to the conventional structure.