The electrochemical behaviour of copper in neutral buffered and non-buffered synthetic seawater and in pure chloride solutions has been studied by cyclic voltammetry, weight loss measurements, open circuit potential and scanning electron microscopy (SEM). Values of the repassivation potentials of Cu in non-buffered and buffered synthetic seawater, at 50 mV s–1, were 0.12 and 0.46 V vs. SCE, respectively. The sharpness, heights and location of the different peaks as well as their charges were shown to be influenced by the composition of the solution, buffering conditions, deoxygenation, polarization potential and time. High chloride concentrations lead to higher oxidation charges. The anodic and the cathodic charges were shown to increase as the chloride concentration increases. The open circuit potential transients of copper in non-deoxygenated, non-buffered synthetic seawater indicate pitting from the beginning of the exposure, while in buffered solutions the pitting appeared only after a quite long exposure period, i.e. after 40 days. Corrosion rates of Cu samples after 3 months of immersion were higher in solutions of pure chloride (0.5 M) than in synthetic seawater. After six months the differences were even more noticeable. SEM images have showed a somewhat higher density of pits on copper samples immersed in the chloride solution (0.5 M), in comparison with those in synthetic seawater. 相似文献
Thirty-five chemical solutions, acids, bases, complexing, argentometric, reducing, oxidising, salts and eluent mixtures, were studied continuously over a 7.5-month period. Twenty-seven remained reasonably stable and had acceptable expiration dates, which were equal to or more than 2 months longer than the established average deviation of ±2% relative to the initial value. Exceptions were made for potassium permanganate (0.1 M), perchloric acid (0.1 M) and disodium hydrogen phosphate (10%) solutions, as well as for HPLC eluent mixtures, which showed stability with expiration dates equal to stated values or shorter by 1 month. The eight chemical solutions presenting expiration dating higher than 6 months were hydrochloric acid (0.1 and 1 M), sulphuric acid (0.5 and 1.5 M), ethylenediamine tetraacetic acid (EDTA) (0.1 M), silver nitrate (0.1 M), ammonium thiocyanate (0.1 M) and iodine (0.1 M). The present data is a suitable guideline for the date of several chemical solutions routinely used in the analytical laboratories. 相似文献
The edge computing model offers an ultimate platform to support scientific and real-time workflow-based applications over the edge of the network. However, scientific workflow scheduling and execution still facing challenges such as response time management and latency time. This leads to deal with the acquisition delay of servers, deployed at the edge of a network and reduces the overall completion time of workflow. Previous studies show that existing scheduling methods consider the static performance of the server and ignore the impact of resource acquisition delay when scheduling workflow tasks. Our proposed method presented a meta-heuristic algorithm to schedule the scientific workflow and minimize the overall completion time by properly managing the acquisition and transmission delays. We carry out extensive experiments and evaluations based on commercial clouds and various scientific workflow templates. The proposed method has approximately 7.7% better performance than the baseline algorithms, particularly in overall deadline constraint that gives a success rate.
The reaction of H2Os3(CO)10 with CF3CN in hexane at 80°C leads to two isomeric products. The isomer constituting the major product contains a 1,1,1-tri-fluoroethylidenimido ligand which bridges one edge of the Os3 triangle via the nitrogen, atom and may be formulated as (μ-H)Os3(CO)10(μ-NC(H)CF3) (I). The minor product, formulated as (μ-H)Os3(CO)10(μ-η2-HNCCF3) (II), contains a 1,1,1-trifluoroacetimidoyl ligand which is also edge-bridging, being N-bonded to one Os atom and C-bonded to the other. Thermolysis of I and II in solution results in loss of a CO group in each case to give (μ-H)Os3(CO)9? (μ3-η2-NC(H)CF3) (III) and (μ-H)Os3(CO)9(μ3-η2-HNCCF3) (IV), respectively, which, it is proposed, are structurally related to I and II, but with the CN group coordinated also to the third Os atom in place of a CO group. In the case of IV this proposal has been confirmed by an X-ray crystallographic analysis. The compound crystallises in space group C2/c with a = 14.258(7), b = 13.486(10), c = 18.193(8) Å, β = 92.68(4)°, and Z = 8. The structure was solved by a combination of direct methods and Fourier difference techniques, and refined by full-matrix least squares to R = 0.054 for 2489 unique observed diffractometer data. Reaction of I with Et3P gives a 1 : 2 adduct which is formulated as (μ-H)Os3(CO)10[μ-N?C(H)(CF3)PEt3] (V) on the basis of NMR evidence. 相似文献
Formation of H-phosphonothioate diesters via condensation of H-phosphonate monoesters with a hydroxylic component in the presence of various coupling agents and possible side reactions that may accompany this process were studied using (31)P NMR spectroscopy. Optimal reaction conditions, which eliminate or significantly suppress the side reactions, have been designed and assessed in syntheses of dinucleoside H-phosphonothioate diesters. 相似文献
Degenerate tri-Hamiltonian structures of the Shivamoggi and generalized Raychaudhuri equations are exhibited. For certain specific values of the parameters, it is shown that hyperchaotic Lü and Qi systems are superintegrable and admit tri-Hamiltonian structures. 相似文献
Small amounts of multicrystalline silicon were melted in an electron beam furnace in different experimental conditions in order to investigate the oxygen evaporation behavior during the electron beam melting (EBM) process. The oxygen content level before and after EBM was determined by secondary ion mass spectroscopy. The oxygen content was reduced from 6.177 to 1.629 ppmw when silicon was melted completely at 15 kW with removal efficiency up to 73.6 %. After that, it decreased continually to <0.0517 ppmw when the refining time exceeded 600 s with a removal efficiency of more than 99.08 %. During the melting process, the evaporation rate of silicon is 1.10 × 10?5 kg/s. The loss of silicon could be reduced up to 1.7 % during oxygen removal process to a desirable figure, indicating EBM is an effective method to remove oxygen from silicon and decrease the loss of silicon. 相似文献