P-MOSFET's with ultra-shallow solid-phase-diffused drain structureproduced by diffusion from BSG gate-sidewall

A p-MOSFET structure with solid-phase diffused drain (SPDD) is proposed for future 0.1-μm and sub-0.1-μm devices. Highly doped ultrashallow p⁺ source and drain junctions have been obtained by solid-phase diffusion from a highly doped borosilicate glass (BSG) sidewall. The resulting shallow, high-concentration drain profile significantly improves short channel effects without increasing parasitic resistance. At the same time, an in situ highly-boron-doped LPCVD polysilicon gate is introduced to prevent the transconductance degradation which arises in ultrasmall p-MOSFETs with lower process temperature as a result of depletion formation in the p⁺-polysilicon gate. Excellent electrical characteristics and good hot-carrier reliability are achieved     

Pd(O) promoted rearrangement of 2-(1,3-butadienyl)cyclopropane- 1,1-dicarboxylate esters to 2-alkenyl-3-cyclopentene-1,1-dicarboxylate esters

The title dienylcyclopropanes smoothly rearrange of five-membered rings in the presence of a Pd(O) catalyst under mild conditions.     

Preparation and biological activity of 2-[4-(thiazol-2-yl)phenyl]propionic acid derivatives inhibiting cyclooxygenase.

A series of 2-[4-(thiazol-2-yl)phenyl]propionic acids substituted at various positions were prepared by the reaction of diethyl 2-methyl-2-(4-thiocarbamoylphenyl)malonates with alpha-bromoaldehyde diethyl acetals or alpha-haloketones followed by hydrolysis of esters. The inhibition of prostaglandin H synthetase (cyclooxygenase) was assayed by use of an enzyme preparation from guinea pig polymorphonuclear leukocytes. Examination of the structure-activity relationship of these compounds indicated that the substitution pattern with halogens at position 3 (R1) of the benzene ring and a methyl group in position 4 (R2) and/or 5 (R3) of the thiazole ring were favorable for inhibitory activity. The compounds bearing bulky alkyl or polar functional groups at the R2 position were weak inhibitors. The potent inhibitors of cyclooxygenase were tested for their ability to reduce carrageenin-induced inflammation of rat paws. These derivatives had strong anti-inflammatory activity based on their strong inhibition of cyclooxygenase, with some exceptions, including those with a thiomethyl group at R1.     

High performance of silicided silicon-sidewall source and drain (S4D) structure

A silicided silicon-sidewall source and drain (S⁴D) structure is proposed for sub-0.1-μm devices. The merit of the S⁴D structure is that the series resistance of the source and drain is significantly reduced since the silicide layer is attached very close to the gate electrode and the silicon sidewall can be doped very highly. Thus, very high drain current drive can be expected, Another advantage of this structure is that the source and drain extensions are produced by the solid-phase diffusion of boron from the highly doped silicon-sidewall. Thus, shallow extensions with very high doping can be realized. A 75-nm gate length pMOSFET fabricated with this structure is shown to exhibit excellent electrical characteristics     

1.5 nm direct-tunneling gate oxide Si MOSFET's

In this paper, normal operation of a MOSFET with an ultra-thin direct-tunneling gate oxide is reported for the first time. These high current drive n-MOSFET's were fabricated with a 1.5 nm direct-tunneling gate oxide. They operate well at gate lengths of around 0.1 μm, because the gate leakage current falls in proportional to the gate length, while the drain current increases in inverse proportion. A current drive of more than 1.0 mA/μm and a transconductance of more than 1,000 mS/mm were obtained at a gate length of 0.09 μm at room temperature. These are the highest values ever obtained with Si MOSFET's at room temperature. Further, hot-carrier reliability is shown to improve as the thickness of the gate oxide is reduced, even in the 1.5 nm case. This work clarifies that excellent performance-a transconductance of over 1,000 mS/mm at room temperature-can be obtained with Si MOSFET's if a high-capacitance gate insulator is used     

0.15-μm buried-channel p-MOSFETs with ultrathin boron-dopedepitaxial Si layer

We demonstrated silicon MOSFETs with a counter-doped ultrathin epitaxial channel grown by low-temperature UHV-CVD; this allows the channel region to be doped with boron with high precision. The boron concentration and epitaxial layer thickness can be chosen independently, and so it is easy to adjust the threshold voltage of the buried-channel p-MOSFETs with n-type polysilicon gates. It was confirmed that choosing an ultrathin epitaxial layer at 10 nm leads to suppression of the short-channel effects in buried-channel p-MOSFETs with gate length down to 0.15 μm, while maintaining an appropriate value of threshold voltage     

Stereoselective synthesis of vinylgermanes and their facile transformation into vinyl halides

Whereas iododegermylation of (Z)-1-triethylgermyl-1-dodecene gives (Z)-1-iodo-1-dodecene, bromodegermylation proves to give (E)-1-bromo-1-dodecene. Two general procedures for the preparation of vinylgermanes are also described.     

Enantioselective synthesis of martinelline chiral core and its diastereomer using asymmetric tandem Michael-aldol reaction

The martinelline chiral core 3 and its diastereomer were synthesized by using the asymmetric tandem Michael-aldol reaction as the key step from 4-methoxycarbonylanthranilaldehyde and the α,β-unsaturated aldehyde.     

Efficient calculation of lattice sums for free-space periodicGreen's function

An efficient method to calculate the lattice sums is presented for a one-dimensional (1-D) periodic array of line sources. The method is based on the recurrence relations for Hankel functions and the Fourier integral representation of the zeroth-order Hankel function. The lattice sums of arbitrary high order are then expressed by an integral of elementary functions, which is easily computed using a simple scheme of numerical integration. The calculated lattice sums are used to evaluate the free-space periodic Green's function. The numerical results show that the proposed method provides a highly accurate evaluation of the Green's function with far less computation time, even when the observation point is located near the plane of the array     

Cleavage of vinyl carbon-silicon bond with tetrabutylammonium fluoride

Dimethylphenylsilyl group is removed from a vinyl carbon with tetrabutylammonium fluoride. The presence of phenyl group on silicon atom plays a critical role. The cleavage of allyldimethylsilyl- and alkoxydimethylsilyl groups also proceeds very easily.