Synthesis and refractive‐index control of fluoropolymers by the polyaddition of bis(epoxide)s and triazine di(aryl ether)s

The polyaddition of fluorine‐containing bis(epoxide)s and fluorine‐containing triazine di(aryl ether)s were examined to give the corresponding fluorine‐containing poly(cyanurate)s. It was observed that the synthesized fluoropolymers had good thermal stabilities and good film‐forming properties. The glass transition temperatures (T_g's) and refractive‐indices (n_D's) of synthesized polymers were determined by differential scanning calorimetry and ellipsometry, respectively, and it was found that the values of T_g's and n_D's were supported by their fluorine containing ratios and skeletons. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 4421–4429, 2007     

Simultaneous determination of serotonin and 5-hydroxyindole-3-acetic acid in human urine by automated precolumn derivatization and semi-microbore column liquid chromatography with fluorescence detection.

An improved high-performance liquid-chromatographic (HPLC) assay for the simultaneous determination of serotonin (5-HT) and 5-hydroxyindole-3-acetic acid (5-HIAA) in human urine is reported. Following the automated precolumn derivatization of urinary 5-HT and 5-HIAA with benzylamine, the derivatives are separated by isocratic elution on a reversed-phase C18 semi-microbore column, and are fluorometrically detected at an excitation wavelength of 345 nm and an emission wavelength of 480 nm. The detection limits of 5-HT and 5-HIAA are 7 and 5 nmol/l in urine (0.7 and 0.5 fmol/20-microl injection). The proposed automatic method permits a highly selective and sensitive determination of 5-HT and 5-HIAA in human urine without any sample purification.     

A 0.1-μm delta-doped MOSFET fabricated with post-low-energyimplanting selective epitaxy

A simple fabrication technology for delta-doped MOSFETs, named post-low-energy implanting selective epitaxy (PLISE) is presented. The PLISE technology needs no additional photo-lithography mask, deposition step or etching step even for CMOS devices. The only additional step is growing undoped epitaxial channel layers by UHV-CVD after the channel implantation. With this technology, delta-doped NMOSFETs with 0.1-μm gate length were successfully fabricated. By optimizing the epi-layer thickness and the channel doping level, short-channel effects are suppressed enough to achieve 0.1-μm gate length. Moreover, the junction capacitance at zero bias is reduced by 50%     

Infrared Features of Unquenched Lattice Landau Gauge QCD

The running coupling and the Kugo-Ojima parameter of unquenched lattice Landau gauge are simulated and compared with the continuum theory. Although the running coupling measured by the ghost and gluon dressing function is infrared suppressed, the running coupling has a maximum of α₀ ∼ 2 − 2.5 at around q = 0.5 GeV irrespective of the fermion actions (Wilson fermions and Kogut-Susskind (KS) fermions). The Kugo-Ojima parameter c which saturated to about 0.8 in quenched simulations becomes consistent with 1 in the MILC configurations produced with the use of the Asqtad action, after averaging the dependence on polarization directions caused by the asymmetry of the lattice. The presence of the correction factor 1 + c ₁/q ² in the running coupling depends on the lattice size and the sea quark mass. In the large lattice size and small sea quark mass, c ₁ is confirmed of the order of a few GeV. The MILC configuration of a = 0.09 fm suggests also the presence of dimension-4 condensates with a sign opposite to the dimension-2 condensates. The gluon propagator, the ghost propagator, and the running coupling are compared with recent pQCD results including an anomalous dimension of fields up to the four-loop level.     

Introduction of several trifluoromethyl groups onto the activated aromatic materials with CF3TMS-CuI-KF system

Trifluoromethylation onto the tetrafluorophthalonitrile and tetrafluoroisophthalonitrile has been carried out using CF₃TMS-CuI-KF system, and it was demonstrated that these trifluoromethylation enabled us to successfully construct di- and/or tri-trifluoromethylated benzonitriles via the decyanotrifluoromethylation.     

Photoluminescence properties of trace amounts of Pr and Tb in yttria-stabilized zirconia

We have investigated the photoluminescence (PL) properties of trace amounts of Pr and Tb in single-crystal samples of yttria-stabilized zironia (YSZ), and found that Pr of the order of 10⁻⁶ mass% and Tb of the order of 10⁻⁵ mass% in YSZ can be detected by the PL spectroscopy. The PL spectra of the YSZ samples for the 280 nm excitation were comprised of several peaks and a broad emission. The peaks were attributed to transitions of Pr³⁺ and Tb³⁺ in the YSZ samples, whereas the broad emission seemed to be attributed to the yttria-associated oxygen vacancies. The peak intensities corresponded to the amounts of Pr and Tb in the YSZ samples, the amounts of which were analyzed by glow discharge mass spectrometry. In the PL excitation spectra, but not in the photoabsorption spectra, small peaks at 376 and 381 nm were observed, and were attributed to the transitions of Tb³⁺ in the YSZ samples. The results of the PL excitation spectra corresponding to the Pr³⁺ line emissions suggest that the charge transfer occurs between the YSZ and Pr ion in it. The trace amounts of these lanthanoids in YSZ would disturb the decay process of the photoinduced electrons to the yttria-associated oxygen vacancies.     

SILEX-1装置上等离子体尾场加速电子初步实验

激光等离子体加速电子机制可以产生准单能的高能电子束, 近年来成为国际上的研究热点. 中国工程物理研究院激光装置已经能够达到286TW的输出功率, 为国内在该领域的研究提供了实验条件. 文章介绍了在SILEX-1装置上开展的激光等离子体加速电子的初步实验, 并对测得结果进行讨论, 为下一步实验的进行提供了准备条件.     

Composition spread metal thin film fabrication technique based on ion beam sputter deposition

A composition spread metal thin film fabrication technique based on ion beam sputter deposition method was developed. The technique enables us to fabricate any desired part or a complete binary/ternary composition spread metal thin films onto a single substrate by sequentially sputtering different target materials. Composition spread metal thin films can be deposited directly on a dielectric film in patterned electrode shape for C-V and I-V measurements. The system could be especially useful in the search for new multi-component metal gate materials.     

High repetition rate, wide-aperture KrF lasers for subpicosecondamplification

A high repetition rate, wide-aperture KrF laser with a magnetic switch has been developed. A dynamic response and a core loss of several magnetic materials were measured, resulting in a loss as low as 0.45 J/pulse for a voltage risetime of ~100 ns. A maximum output energy of 2.5 J in 20 ns (FWHM) was obtained with a total efficiency of 2.5% at 20 Hz. The cross section of the output beam was 65×50 mm². Spectral, spatial, and temporal profiles of gain and absorption coefficients were also measured, resulting in a peak gain of 8.5%/cm. An output energy of 410 mJ was extracted in 280 fs with two beams by using this laser as an amplifier