纳米晶软磁合金中的结构对技术磁性的影响——Ⅱ.磁弹耦合作用

对磁弹耦合在决定纳米晶软磁合金宏观磁性中的作用进行了探讨,高场磁化规律以及正电子湮没测量表明:对Fe_73.5Cu₁Nb₃Si_13.5B₉合金,准位错偶极子造成的应力场对畴壁的钉扎效应是造成纳米晶软磁合金矫顽力的重要原因;结构缺陷造成的应力场与磁致伸缩的耦合作用对纳米晶软磁性能有重要的影响.在结构各向异性和磁弹耦合能共同作用下可解释纳米晶合金表现出最佳软磁性能.     

HL—1装置等离子体密度反馈实验

本文叙述HL-1装置用反馈脉冲补充送气方式控制等离子体密度的方法及实验结果。给出了在固有的物理实验条件下的最佳反馈方式,实现了对密度的有效控制及反馈。讨论了在不同密度条件下的几种反馈方式及反馈系统尚存在的不足之处。     

非参数回归函数之改良基于分割的估计的强相合性（英）

设(X,Y),(X1,Y1),…,(XnYn)为取值于 Rd× R的 i．i．d．随机变量,E(|Y|) ＜∞．设mn(x)为回归函数m(x)=E(|Y|X=x)基于分割的估计,本文在对mn(x)进行改良的条件下得到改良的基于分割的强相合估计．     

中国莲的定量染色体图

利用MetaMorph软件定量分析了中国莲(Nelumbo mucifera Gaertn.)每条前中期染色体上(从短臂到长臂)二脒基苯基吲哚(DAPI)荧光强度的变化，结合染色体的相对长度和臂比作为辅助参数，构建了中国莲前中期染色体的定量染色体图．该定量染色体图是实际的前中期染色体的一种直观模式，可识别中国莲基因组中每条染色体以及分析染色体上的异染色质分布，为莲的细胞遗传学研究提供了一种新的方法．     

反超图的笛卡儿积的上色数

讨论反超图的笛卡儿积的着色理论 ,求出了满足一定条件的反超图的笛卡儿积的上色数 .     

电位滴定法测定模拟高放废液中的游离酸

本文研究了用电位滴定法测定模拟高放废液中游离酸的方法。用草酸钾做络合剂以消除Ｆｅ＾３＋、Ａｌ＾３＋、Ｎｄ＾３＋等多种水解离子的影响，用标准碱直接进行电位滴定，即可快速准确地测定模拟高放废液中游离酸的含量。方法的相对标准偏差为１．８％，标准加入回收率为１００－１０１％，能为放射性废物固化试验提供可靠的分析数据。     

Microstructure and Ion Exchange in Stearic Acid Langmuir-Blodgett Films Studied by Fourier Transform Infrared-Attenuated Total Reflection Spectroscopy

Fourier transform infrared-attenuated total reflection (FTIR-ATR) spectra have been recorded of 11-layer Langmuir-Blodgett (LB) films of stearic acid deposited at various surface pressures (0.1, 15, and 35 mN/m), and the molecular orientation angles were evaluated quantitatively, which supplied insight into the molecular order with the alkyl chains tightly packed like crystal in the LB films deposited at the zero and higher surface pressures. These experimental results indicate that, in the Langmuir film as the precursor of LB films, stearic acid molecules self-aggregate to form two-dimensional crystalline domains already even at the zero surface pressure, which results in the inhomogeneity of monolayer. The analysis of dependence of nu(C=O) intensity on the surface pressure, surface density, and subphase temperature leads to the conclusion that the defects in LB films originate from the Langmuir film and be conserved upon deposition. Annealing below 50 degrees C and cooling could improve the monolayer homogeneity, and thus a defect-free or low-defect LB films can be deposited. Furthermore, ion exchange conducted in the LB films, on the other hand, confirms the existence of structure defects in LB films of stearic acid. The polar plane microstructure, lateral transport along the polar planes and the coordination types of stearic acid/cation system may be the rate-limiting process. The results have implication on the possible uses of stearic acid LB films as ion-exchange materials or sensors. Copyright 2001 Academic Press.     

Studies on Phase Behavior of Alkyl Polyglucoside Based on Microemulsions with Modified Fishlike Phase Diagram

The three-phase behavior in the quaternary system of an alkyl (C8/10^- or C12/14^-)polyglucoside / 1-butanol / n-octane / water has been studied at 40℃ with the modified fishlike phase diagram, which is presented by us for the first time. The mass fraction of 1-butanol in the hydrophile-lipophile balanced interfacial layer, A^S, the coordinates of the start point B and the end point E of the phase diagram, and the solubilities of alkyl polyglucoside and 1-butanol in n-octane phase were calculated. The solubilization of the microemulsion was also discussed.     

GaAs衬底上β-Ga2O3纳米点阵薄膜的MOCVD制备

将热氧化与MOCVD工艺相结合,总结了一种在本征GaAs衬底上进行β-Ga₂O₃纳米点阵薄膜制备的工艺,该工艺不涉及金属催化剂与复杂刻蚀,工艺更为简单。使用扫描电子显微镜对所制备薄膜的形貌特征进行了表征与分析,发现所制备的纳米点阵薄膜呈现五方的柱状结构。对所制备样品进行了X射线衍射、拉曼振动、光致发光谱的测试,结果表明薄膜的晶体质量随着MOCVD生长温度与Ⅵ/Ⅲ比的提高而得到优化。使用有限元法（FEM）仿真验证了β-Ga₂O₃纳米点阵薄膜制备的高陷光特点。     

在亚音速气流作用下连续激光辐照铝合金的穿孔效应

不同气流速度作用下激光辐照靶材的穿孔效应不同。实验研究了亚音速气流（0~0.7 Ma）环境下,1 070 nm连续激光辐照7075铝合金的穿孔效应。对铝合金中心点温度历史、穿孔时间、穿孔孔径以及表面形貌变化进行了分析,结果表明:在相同气流速度下,随着入射激光功率密度的增加,铝合金表面温升速度加快且最终熔融层所达到的平衡温度增大;铝合金的穿孔时间呈指数减小;孔径增大速率呈指数减小。在相同激光功率密度下,随着气流速度的增加,铝合金穿孔时间总体呈先增大后减小至平稳之后再增大的趋势;熔融物移除速度和气流的冷却作用这两方面共同导致在0.1 Ma附近出现最长穿孔时间,在0.3 Ma附近出现最短穿孔时间,0.6 Ma的穿孔时间与0 Ma的穿孔时间大致相等在5.5 s左右;随着气流速度增大冷却效应增强,在0.7 Ma之后铝合金并未出现穿孔。对流冷却导致熔融物快速冷凝,被移除的熔融物集中在气流的下游区域。