Small and high-density GeSiC dots stacked on buried Ge hut-clusters in Si

Self-assembled GeSiC dots stacked on a Ge hut-cluster layer buried in Si have been investigated. The critical thickness for formation of GeSiC dots is reduced owing to the strain fields from the buried hut-clusters. By utilizing the stacked structure, the dot size is decreased and the uniformity is improved. The highest density of the GeSiC dots with stacked structures is 7.4×10¹⁰ cm⁻², which is six times larger than that of single GeSiC dots. The formation of the self-assembled GeSiC dots is strongly influenced by being stacked with buried Ge dots as well as C incorporation.     

A 10-s doping technology for the application of low-temperaturepolysilicon TFTs to giant microelectronics

A bucket-type high-density (0.25-1.2-mA/cm²) low-energy (500-2000 V) ion source was utilized for high-speed phosphorus doping directly into a thin polysilicon layer without cap SiO₂. Doping gas with He dilution was selected to reduce etching of polysilicon film. Excimer laser (XeCl, 8 mm×8 mm) pulse annealing was introduced to activate effectively the doped impurity. The combination of these techniques provided a practically low sheet resistance for the TFT source, drain, and gate with a short time doping. The low-temperature polysilicon TFT fabricated with a doping time of 10 s had characteristics comparable to those of that fabricated by a longer time doping or conventional ion implantation, showing the practicality of this technology and its promise for giant microelectronics     

A multiplexer with coupled quarter wave distributed lines in highdielectric ceramics

A multiplexers available several purposes such as for mobile communications, CATV systems and multimedia systems in future, are propped and trially made by authors. This paper present the results the design concept and experimental results. The design principle was based on the theoretical concept proposed by us     

Structural and electrical properties of crystalline (1−x)Ta2O5−xTiO2 thin films fabricated by metalorganic decomposition

Polycrystalline (1−x)Ta₂O₅−xTiO₂ thin films were formed on Si by metalorganic decomposition (MOD) and annealed at various temperatures. As-deposited films were in the amorphous state and were completely transformed to crystalline after annealing above 600 °C. During crystallization, a thin interfacial SiO₂ layer was formed at the (1−x)Ta₂O₅−xTiO₂/Si interface. Thin films with 0.92Ta₂O₅–0.08TiO₂ composition exhibited superior insulating properties. The measured dielectric constant and dissipation factor at 1 MHz were 9 and 0.015, respectively, for films annealed at 900 °C. The interface trap density was 2.5×10¹¹ cm⁻² eV⁻¹, and flatband voltage was −0.38 V. A charge storage density of 22.8 fC/μm² was obtained at an applied electric field of 3 MV/cm. The leakage current density was lower than 4×10⁻⁹ A/cm² up to an applied electric field of 6 MV/cm.     

New theoretical concept of thin electromagnetic wave absorber usingresonant and scattering effect of dielectric and magnetic materials

Thin electromagnetic absorber such as less than 2~3 mm will be required for wireless LAN for domestic and business use together with millimeter wave broadcasting in the future. To make a thin construction, many resonators with lossy material were used. This paper present theoretical results that are useful for absorber designs     

Self-aligned imaging system using phase conjugate readout from elementary holographic grating

We propose a self-aligned imaging system (SAIS) using phase conjugate readout from an elementary holographic grating. The SAIS provides a huge amount of interconnections between a lot of points on two corresponding imaging planes without troublesome mechanical alignment. In the SAIS, a hologram for one-to-one interconnection is used for many-to-many interconnections. In addition, the SAIS has the capability of correcting aberration. Preliminary experiments verify the principle and the capability of the SAIS.     

Host-guest complexation effect of 2,3,6-tri-O-methyl-β-cyclodextrin on a C60-porphyrin light-to-photocurrent conversion system

In a light-to-photocurrent conversion system based on a C₆₀-porphyrin bilayer prepared by electrostatic alternate adsorption, porphyrin units in a porphyrin polymer have been isolated by cyclodextrin utilizing the host-guest interaction. In this system, a high quantum yield was achieved by suppression of self-quenching of porphyrin units.     

Phase separation in the formation of hollow particles by suspension polymerization for divinylbenzene/toluene droplets dissolving polystyrene

Phase-separation behavior within polymerizing divinylbenzene/toluene droplet dissolving polystyrenes (PS) was investigated to clarify the formation mechanism of the hollow polymer particles by suspension polymerization. No hollow particles were obtained at a low content of low-molecular-weight PS where phase separation occurred at high conversion. On the other hand, hollow particles were obtained at a high content of high-molecular-weight PS where phase separation occurred at low conversion. The phase separation in an early stage of the polymerization, which was promoted by the presence of PS and cross-links of polydivinylbenzene, was a key factor for the formation of the hollow structure.     

Synthesis of 4,5-diaminopyrrolo[1,2-a]quinoline derivatives by annulation of N,N-dialkyl[2-(pyrrol-1-yl)benzylidene]ammonium salts in the presence of an isocyanide

A facile synthetic method for 4,5-diaminopyrrolo[1,2-a]quinoline derivatives has been developed. Treatment of 2-(pyrrol-1-yl)benzaldehydes with secondary amine hydrochloride/NaI/TMSCl/Et₃N in the presence of an isocyano compound leads to the formation of 4-alkyl(or aryl)amino-5-dialkylaminopyrrolo[1,2-a]quinolines.     

Chiral β-dimethylaminoalkylphosphines. Highly efficient ligands for a nickel complex catalyzed asymmetric grignard cross-coupling reaction

Chiral β-dimethylaminoalkylphosphines were prepared starting with amino acids, (S)-alanine, (S)-phenylalanine, (R)-phenylglycine, (S)-valine, and (R)-tert-leucine. The chiral phosphines were found to be highly efficient ligands for a nickel catalyzed asymmetric Grignard cross-coupling reaction (38～94% optical yield).