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1.
Chun-Tsen Lu Kun-Wei Lin Huey-Ing Chen Hung-Ming Chuang Chun-Yuan Chen Wen-Chau Liu 《Electron Device Letters, IEEE》2003,24(6):390-392
A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated. 相似文献
2.
Ching-Te Chuang Bernstein K. Joshi R.V. Puri R. Kim K. Nowak E.J. Ludwig T. Aller I. 《Circuits and Devices Magazine, IEEE》2004,20(1):6-19
The generation-over-generation scaling of critical CMOS technology parameters is ultimately bound by nonscalable limitations, such as the thermal voltage and the elementary electronic charge. Sustained improvement in performance and density has required the introduction of new device structures and materials. Partially depleted SOI, a most recent MOSFET innovation, has extended VLSI performance while introducing unique idiosyncrasies. Fully depleted SOI is one logical extension of this device design direction. Gate dielectric tunneling, device self-heating, and single-event upsets present developers of these next-generation devices with new challenges. Strained silicon and high-permittivity gate dielectric are examples of new materials that will enable CMOS developers to continue to deliver device performance enhancements in the sub-100 nm regime. 相似文献
3.
Chun-Yuan Chen Shiou-Ying Cheng Wen-Hui Chiou Hung-Ming Chuang Wen-Chau Liu 《Electron Device Letters, IEEE》2003,24(3):126-128
A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications. 相似文献
4.
The interfacial reactions between liquid In and Cu substrates at temperatures ranging from 175°C to 400°C are investigated
for the applications in bonding recycled sputtering targets to their backing plates. Experimental results show that a scallop-shaped
Cu16In9 intermetallic compound is found at the Cu/In interface after solder reactions at temperatures above 300°C. A double-layer
structure of intermetallic compounds containing scallop-shaped Cu11In9 and continuous CuIn is observed after the Cu/In interfacial reaction at temperatures below 300°C. The growth of all these
intermetallic compounds follows the parabolic law, which implies that the growth is diffusion-controlled. The activation energies
for the growth of Cu16In9, Cu11In9, and CuIn intermetallic compounds calculated from the Arrhenius plot of growth reaction constants are 59.5, 16.9, and 23.5
kJ/mole, respectively. 相似文献
5.
Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature 下载免费PDF全文
Hydrogen-free silicon nitride (SiNx) films were deposited at room temperature by microwave electron cyclotron resonance (MW-ECR) plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the N2 flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9 GPa, could be obtained at lower N2 flow rate of 4 sccm. 相似文献
6.
7.
Hidden-Action in Network Routing 总被引:1,自引:0,他引:1
Feldman M. Chuang J. Stoica I. Shenker S. 《Selected Areas in Communications, IEEE Journal on》2007,25(6):1161-1172
In communication networks, such as the Internet or mobile ad-hoc networks, the actions taken by intermediate nodes or links are typically hidden from the communicating endpoints; all the endpoints can observe is whether or not the end-to-end transmission was successful. Therefore, in the absence of incentives to the contrary, rational (i.e., selfish) intermediaries may choose to forward messages at a low priority or simply not forward messages at all. Using a principal-agent model, we show how the hidden-action problem can be overcome through appropriate design of contracts in both the direct (the endpoints contract with each individual router directly) and the recursive (each router contracts with the next downstream router) cases. We further show that, depending on the network topology, per-hop or per-path monitoring may not necessarily improve the utility of the principal or the social welfare of the system. 相似文献
8.
Hao Yin Chuang Lin Berton Sebastien Bo Li Geyong Min 《International Journal of Communication Systems》2005,18(8):711-729
Fast and accurate methods for predicting traffic properties and trend are essential for dynamic network resource management and congestion control. With the aim of performing online and feasible prediction of network traffic, this paper proposes a novel time series model, named adaptive autoregressive (AAR). This model is built upon an adaptive memory‐shortening technique and an adaptive‐order selection method originally developed by this study. Compared to the conventional one‐step ahead prediction using traditional Box–Jenkins time series models (e.g. AR, MA, ARMA, ARIMA and ARFIMA), performance results obtained from actual Internet traffic traces have demonstrated that the proposed AAR model is able to support online prediction of dynamic network traffic with reasonable accuracy and relatively low computation complexity. Copyright © 2005 John Wiley & Sons, Ltd. 相似文献
9.
Chuang C.T. Chin K. Stork J.M.C. Patton G.L. Crabbe E.F. Comfort J.H. 《Solid-State Circuits, IEEE Journal of》1992,27(2):225-228
A detailed study on the leverage of high-f T transistors for advanced high-speed bipolar circuit applications is presented. It is shown that for the standard ECL (emitter-coupled logic) circuit, the leverage of high f T is limited by the passive resistors (emitter-follower resistor and collector load resistor) and wire delay, especially in the low-power regime. For the standard NTL (nonthreshold logic) circuit, the leverage is higher due to its front-end configuration and lower power supply value. As the passive resistors are decoupled from the delay path in various advanced circuits utilizing active-pull-down schemes, the leverage of high FT becomes more significant 相似文献
10.
A theory for the electronic band structure and the free-carrier optical gain of wurtzite-strained quantum-well lasers is presented. We take into account the strain-induced band-edge shifts and the realistic band structures of the GaN wurtzite crystals. The effective-mass Hamiltonian, the basis functions, the valence band structures, the interband momentum matrix elements, and the optical gain are presented with analytical expressions and numerical results for GaN-AlGaN strained quantum-well lasers. This theoretical model provides a foundation for investigating the electronic and optical properties of wurtzite-strained quantum-well lasers. 相似文献