Reductive Amination of Carbonyl Compounds over a Ni2P/SiO2 Catalyst in a Flow Mode

Kinetics and Catalysis - The catalytic properties of a nickel phosphide catalyst supported on silica gel in the reductive amination of carbonyl compounds were studied in a flow reactor using...     

A Novel Biaryl Derivative from Hydrangea chinensis

Chemistry of Natural Compounds - A novel bibenzyl derivative, hydrangchinenin (1), was isolated from the stems of Hydrangea chinensis Maxim. (Hydrangeaceae). Its structure was determined on the...     

Comparison of the Parameters of UWB Signals for Comparing the Characteristics of the Human Visual System and Matrix Receivers

Journal of Communications Technology and Electronics - A quantitative comparison of the spectral characteristics of the human visual system and matrix photodetectors is carried out. Criteria for a...     

Evolutionary Development and Structural Diversity of Natural Antimicrobial Peptides,Peptidometics, and Cationic Amphiphiles Based on Amino Acids

Russian Journal of General Chemistry - The review article traces the main trends of the synthetic approach to the solution of the problem of overcoming the resistance of pathogenic bacterial...     

Noncentrosymmetric Tetrel Pnictides RuSi4P4 and IrSi3P3: Nonlinear Optical Materials with Outstanding Laser Damage Threshold

Noncentrosymmetric (NCS) tetrel pnictides have recently generated interest as nonlinear optical (NLO) materials due to their second harmonic generation (SHG) activity and large laser damage threshold (LDT). Herein nonmetal-rich silicon phosphides RuSi₄P₄ and IrSi₃P₃ are synthesized and characterized. Their crystal structures are reinvestigated using single crystal X-ray diffraction and ²⁹Si and ³¹P magic angle spinning NMR. In agreement with previous report RuSi₄P₄ crystallizes in NCS space group P1, while IrSi₃P₃ is found to crystallize in NCS space group Cm, in contrast with the previously reported space group C2. A combination of DFT calculations and diffuse reflectance measurements reveals RuSi₄P₄ and IrSi₃P₃ to be wide bandgap (E_g) semiconductors, E_g = 1.9 and 1.8 eV, respectively. RuSi₄P₄ and IrSi₃P₃ outperform the current state-of-the-art infrared SHG material, AgGaS₂, both in SHG activity and laser inducer damage threshold. Due to the combination of high thermal stabilities (up to 1373 K), wide bandgaps (≈2 eV), NCS crystal structures, strong SHG responses, and large LDT values, RuSi₄P₄ and IrSi₃P₃ are promising candidates for longer wavelength NLO materials.     

Nonwandering continuum possessing the Wada property

Theoretical and Mathematical Physics - Dynamic systems acting on the plane and possessing the Wada property have been observed. There exist only two topological types, symmetric and antisymmetric,...     

On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon

Semiconductors - Abstract—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid...     

Continuous Newton-like Inertial Dynamics for Monotone Inclusions

Set-Valued and Variational Analysis - In a Hilbert framework ℌ, we study the convergence properties of a Newton-like inertial dynamical system governed by a general maximally monotone...     

Mesomorphism of Dichotomous Compounds; X-Ray Diffraction Analysis of 4-Chlorophenyl Hexadecyl Ether

Crystallography Reports - The crystal and molecular structures of Cl–C6H4–O–C16H33 (I) have been studied, and its differential scanning calorimetry (DSC) study is performed....