Synthesis and Crystal Structure of Bis(tetraethylammonium) Octabromo‐triselenate(II)‐{dibromodiselenate(I)}, [NEt4]2[Se3Br8(Se2Br2)], the Salt of a Mixed‐valence Bromoselenate(II,I) Anion

The brown crystals of [NEt₄]₂[Se₃Br₈(Se₂Br₂)] ( 1 ) were obtained when selenium and bromine reacted in the solution of acetonitrile in the presence of tetraethylammonium bromide. The crystal structure of 1 has been determined by the X‐ray methods and refined to R = 0.0308 for 10433 reflections. The crystals are monoclinic, space group P2₁ with Z = 2 and a = 12.0393(3) Å, b = 11.8746(3) Å, c = 13.1946(3) Å, β = 96.561(1)° (123 K). In the solid state structure the anion of 1 is built up of Se₃Br₈ unit which consists of a triangular arrangement of three planar SeBr₄ units sharing a common edge through two μ₃‐bridging Br atoms, and one Se₂Br₂ molecule which is linked to one of μ₃‐bridging Br atoms. The three Se^II atoms form a triangle which is almost perpendicular to the planes given by three SeBr₄ moieties. The contact between the μ₃Br and the Se^I atom of the Se₂Br₂ molecule is 3.1711(8) Å and can be interpreted as a bond of the donor‐acceptor type with the μ₃Br as donor and the Se₂Br₂ molecule as acceptor. The terminal Se^II‐Br and μ₃Br‐Se^II bond lengths are in the ranges 2.3537(7)–2.4737(7) Å and 2.7628(7)–3.1701(7) Å, respectively. The bond lengths in coordinated Se₂Br₂ molecule are: Se^I‐Se^I = 2.2636(9) Å, Se^I‐Br = 2.3387(11) and 2.3936(8) Å.     

Synthesis and Crystal Structure of Bis(methyltriphenylphosphonium) Hexabromotellurate(IV)‐bis{dibromoselenate(II)}, [PMePh3]2[TeBr6(SeBr2)2], the Salt of a Mixed‐valence Bromotellurate(IV)‐Selenate(II) Anion

Brown crystals of [PMePh₃]₂[TeBr₆(SeBr₂)₂] ( 1 ) were obtained when selenium and bromine (1:1) react in acetonitrile solution in the presence of tellurium(IV) bromide and methyltriphenylphosphonium bromide. The salt 1 crystallizes in the triclinic space group P1¯ with the cell dimensions a = 10.3630(14)Å, b = 11.5140(12)Å, c = 11.7605(17)Å, α = 108.643(9)°, β = 106.171(10)° and γ = 99.077(9)° (296 K). In the solid state the [TeBr₆(SeBr₂)₂]^2— anion contains a nearly regular [TeBr₆] octahedron where the four equatorial bromo ligands each have developed a bond to the Se^II atom of a SeBr₂ molecule. The contacts between the bridging bromo and the Se^II atoms of the SeBr₂ molecules are observed in the range 3.11—3.21Å, and can be interpreted as bonds of the donor‐acceptor type with the bridging bromo ligands as donors and the SeBr₂ molecules as acceptors. The Te^IV—Br distances are in the range 2.67—2.72Å, and the Se^II—Br bond lengths in coordinated SeBr₂ molecules in the range 2.33—2.34Å.     

Comparison characterization of copper selenide thin layers prepared on polyamide 6 films by sorption-diffusion method

Some earlier synthesized copper selenide (Cu _x Se) layers formed on the surface of polyamide 6 by sorption-diffusion method using potassium selenotrithionate (K₂SeS₂O₆) as precursor of selenium were characterized by the XRD, XPS and SEM methods. According to the results of the SEM studies, the most uniform Cu _x Se layers form at the 2.5 h polyamide seleniumized duration at the temperature of 60°C. The thickness of layers, which dependeds on the duration of seleniumization, changed in the range of 0.8–3.2 µm. The XRD patterns of not previously studied Cu _x Se layers showed their phase composition of six copper selenides: Cu₂Se, two phases of CuSe₂, Cu₃Se₂, berzellianite, Cu_2-x Se, and bellidoite Cu₂Se. Analysis of the XRD and XPS data shows that the macrostructure and composition of the Cu_xSe layers depend on the conditions of formation of these layers.      

The influence of process conditions on the formation of thallium sulfide layers on polyethylene by the use of higher polythionic acid H2S33O6

Thallium sulfide layers of varying composition form on the surface of low-density polyethylene (PE) when the PE films have been sulfurized in a solution of higher polythionic acid H₂S₃₃O₆, and then immersed in the alkaline solution of thallium (I) sulfate. The concentration of sulfur sorbed-diffused into PE surface increases with the increase of the sulfurization time and concentration of higher polythionic acid solution. The concentration of thallium in the Tl _x S _y layers depends on the sulfur concentration sorbed-diffused into PE, the concentration, and temperature of thallium (I) sulfate solutions. By chemical analysis of the obtained sulfide layers it was determined that the values of x and y in the Tl_xS_y layers varies in the intervals: 1<x<3, 1<y<6. Two phases TlS, Tl₂S₂ were identified by X-ray diffraction analysis in thallium sulfide layers. Scanning Electron (SEM) and Atomic Force (AFM) microscopies were used to characterize surface morphology of thallium sulfide layers. The films deposited on the PE surface have a non-homogeneous structure, and consist of separated islands.      

Comparison of the efficacy of sulfurization agents in decreasing the sheet resistance of polyamide and polyethylene with copper sulfide layers and influence of their compositions

The process of obtaining semiconductive and electrical conductive layers of copper sulfides by the sorption — diffusion method on polymers (polyamide 6 and low density polyethylene) using solutions of potassium pentathionate, K₂S₅O₆, and higher polythionic acids, H₂S _n O₆ (n = 21, 33), was investigated. The layers were characterized for compositional and electrical properties by X-ray diffraction (XRD) analysis and sheet resistance measurements. The thickness of copper sulfides layers on polyamide and polyethylene increased with increasing time of polymer sulfurization and varied from 10 to 43 μm. The variations of the sheet resistance of copper sulfides layers formed on the surface of polymers on sulfurization agent used, the conditions of sulfurization, chemical and phase composition of the obtained layers were established. Sheet resistance of copper sulfides layers decreases with increasing time of the duration of sulfurization and the number of sulfur atoms in the polythionate anion. The sheet resistance values for copper sulfide layers formed on the polyamide surface are much lower than those of Cu _x S formed on the polyethylene surface. XRD showed the predomination of Cu _x S phases with low x values.      

Decoupling Theranostics with Rare Earth Doped Nanoparticles

Theranostic nanoagents targeted for personalized medicine provide a unified platform for therapeutics and diagnostics. To be able to discretely control each individually, allows for safer, more precise, and truly multifunctional theranostics. Rare earth doped nanoparticles can be rationally tailored to best match this condition with the aid of core/shell engineering. In such nanoparticles, the light‐mediated theranostic approach is functionally decoupled—therapeutics or diagnostics are prompted on‐demand, by wavelength‐specific excitation. These decoupled rare earth nanoparticles (dNPs) operate entirely under near‐infrared (NIR) excitation, for minimized light interference with the target and extended tissue depth action. Under heating‐free 806 nm irradiation, dNPs behave solely as high‐contrast NIR‐to‐NIR optical markers and nanothermometers, visualizing and probing the area of interest without prompting the therapeutic effect beforehand. On the contrary, 980 nm NIR irradiation is upconverted by the dNPs to UV/visible light, which triggers secondary photochemical processes, e.g., generation of reactive oxygen species by photosensitizers coupled to the dNPs, causing damage to cancer cells. Additionally, integration of NIR nanothermometry helps to control the temperature in the vicinity of the dNPs avoiding possible overheating and quenching of upconversion (UC) emission, harnessed for photodynamic therapy. Overall, a new direction is outlined in the development of state‐of‐the‐art rare earth based theranostic nanoplatforms.     

Formation and characterization of Cu<Subscript>x</Subscript>S layers on polyethylene film using the solutions of sulfur in carbon disulfide

Results of the formation of copper sulfide layers using the solutions of elemental sulfur in carbon disulfide as precursor for sulfurization are presented. Low density polyethylene film can be effectively sulfurized in the solutions of rhombic (α) sulfur in carbon disulfide. The concentration of sulfur in polyethylene increases with the increase of the temperature and concentration of sulfur solution in carbon disulfide and it little depends on the duration of sulfurization. Electrically conductive copper sulfide layers on polyethylene film were formed when sulfurized polyethylene was treated with the solution of copper (II/I) salts. Cu_xS layer with the lowest sheet resistance (11.2 Ω cm⁻²) was formed when sulfurized polyethylene was treated with copper salts solution at 80°C. All samples with formed Cu_xS layers were characterized by X-ray photoelectron spectroscopy. XPS analysis of obtained layers showed that on the layer’s surface and in the etched surface various compounds of copper, sulfur and oxygen are present: Cu₂S, CuS, CuO, S₈, CuSO₄, Cu(OH)₂ and water. The biggest amounts of CuSO₄ and Cu(OH)₂ are present on the layer’s surface. Significantly more copper sulfides are found in the etched layers.