Influence of impact-ionization-induced base current reversal onbipolar transistor parameters

In this paper we describe a set of measurements representing a complete characterization of impact-ionization effects in bipolar transistors. We demonstrate that impact-ionization significantly influences the dependence of base resistance on current and voltages applied to the device. A dc method for the simultaneous extraction of all parasitic resistances in bipolar transistors is presented. The method can separate the influence of current-crowding on the base resistance from that of base width and conductivity modulation; the collector parasitic resistance is measured in the active region. Starting from the parameters extracted by means of these techniques, a complete and accurate circuit-model of impact-ionization effects can be defined     

Seedling Development and Evaluation of Genetic Stability of Cryopreserved Dendrobium Hybrid Mature Seeds

Vitrification, a simple, fast, and recommended cryopreservation method for orchid germplasm conservation, was evaluated for Dendrobium hybrid “Dong Yai” mature seeds. The genetic stability of regenerated seedlings was also evaluated using flow cytometry. Mature seeds from this hybrid were submitted to plant vitrification solution (PVS2) for 0, 0.5, 1, 2, 3, 4, 5, or 6 h at 0 °C. Subsequently, they were plunged into liquid nitrogen (LN) at ?196 °C for 1 h and recovered in half-strength Murashige and Skoog culture medium (1/2 MS), and seed germination was evaluated after 30 days. Seeds directly submitted to LN did not germinate after cryopreservation. Seeds treated with PVS2 between 1 and 3 h presented the best germination (between 51 and 58 %), although longer exposure to PVS2 returned moderated germination (39 %). Germinated seeds were further subcultured in P-723 culture medium and developed whole seedlings in vitro after 180 days, with no abnormal characteristics, diseases, or nutritional deficiencies. Seedlings were successfully acclimatized under greenhouse conditions with over 80 % survival. Flow cytometry analysis revealed no chromosomal changes on vitrified seedlings, as well as seedlings germinated from the control treatment (direct exposure to LN). These findings indicate that vitrification is a feasible and safe germplasm cryopreservation method for commercial Dendrobium orchid hybrid conservation.     

Retarding effect of surface base compensation on degradation of noise characteristics of BiCMOS BJTs

Hot carrier degradation of 1/f noise characteristics of bipolar junction transistors is found to be substantially reduced by arsenic surface compensation of the base region, in agreement with former reports on the improvement in reliability of such devices, inferred from their static characteristics studies.     

An Integrated CAD Methodology for Yield Enhancement of VLSI CMOS Circuits Including Statistical Device Variations

In this paper a novel CAD methodology for yield enhancement of VLSI CMOS circuits including random device variations is presented. The methodology is based on a preliminary characterization of the technological process by means of specific test chips for accurate mismatch modeling. To this purpose, a very accurate position-dependent parameter mismatch model has been formulated and extracted. Finally a CAD tool implementing this model has been developed. The tool is fully integrated in an environment of existing commercial tools and it has been experimented in the STMicroelectronics Flash Memory CAD Group.As an example of application, a bandgap reference circuit has been considered and the results obtained from simulations have been compared with experimental data. Furthermore, the methodology has been applied to the read path of a complex Flash Memory produced by STMicroelectronics, consisting of about 16,000 MOSFETs. Measurements of electrical performances have confirmed the validity of the methodology, and the accuracy of both the mismatch model and the simulation flow.     

Experimental and Monte Carlo analysis of impact-ionization inAlGaAs/GaAs HBT's

We present a detailed experimental and theoretical investigation of hot electron effects occurring in AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's) operating at low current densities. Electrons heated by the strong electric field at the base-collector junction give rise to impact ionization and light emission. A new general purpose weighted Monte Carlo procedure has been developed to study such effects. The importance of dead-space effects on the multiplication factor of the device is demonstrated. Good agreement is found between theory and experiment     

Prediction of impact-ionization-induced snap-back in advanced Sin-p-n BJT's by means of a nonlocal analytical model for the avalanchemultiplication factor

The authors point out that when a triangular shape for the electric field in the base-collector space-charge region of an n-p-n Si BJT (bipolar junction transistor) is assumed, the electron mean energy can be calculated analytically from a simplified energy-balance equation. On this basis a nonlocal-impact-ionization model, suitable for computer-aided circuit simulation, has been obtained and used to calculate the output characteristics at constant emitter-base voltage (grounded base) of advanced devices. Provided the experimental bias-dependent value of the base parasitic resistance is accounted for in the device model, the base-collector voltage at which impact-ionization-induced snap-back occurs can be accurately predicted     

Crosstalk-based capacitance measurements: theory and applications

Geometry scaling increases the relative effect of coupling capacitances on performance, power, and noise so that they need to be carefully taken into account during process development, characterization, and monitoring. In the last decade, charge-based capacitance measurements (CBCMs) have been widely used to estimate on-chip wiring and coupling capacitances because of their accuracy and simplicity. We provide a thorough theoretical and experimental study of CBCMs applied to the selective extraction of cross-coupling capacitances. We take a historical perspective starting from the original CBCM approach proposed by Chen in 1996, and we present a new technique for crosstalk-based capacitance measurements (CTCMs). CTCMs improve the accuracy and usability of CBCMs while reducing the complexity of the test structures. We present the theory of CTCM, we provide experimental results demonstrating its improved accuracy, and we discuss its application to a wide range of process monitoring and testing tasks. Experimental results are used throughout the paper to support the discussion.     

Degradation mechanisms in polysilicon emitter bipolar junction transistors for digital applications

This paper is a thorough overview on polysilicon bipolar junction transistors’ (BJTs) reliability, with focus on transistors for digital applications, where the base–emitter junction switches from forward to reverse bias (low fields) and the base–collector junction is reverse biased at high fields. The effects of base–emitter reverse biasing are generation, charging and discharging of traps in silicon oxide or at the Si–SiO₂ interface near the base–emitter junction; their understanding is essential to model transistor current gain degradation and low frequency noise increase. Failure modes and mechanisms, degradation kinetics, lifetime models and physical phenomena related to device aging will be discussed. The base–emitter junction is also stressed by high currents, which lead, for example, to electromigration phenomena. The base–collector junction degradation is mainly due to high field and impact-ionization effects. Reliability constraints are now an important component of a correct design methodology in deep-sub-micron integrated circuits.     

Triphenylphosphine-Functionalized Core-Cross-Linked Micelles and Nanogels with a Polycationic Outer Shell: Synthesis and Application in Rhodium-Catalyzed Biphasic Hydrogenations

Unimolecular amphiphilic nanoreactors with a poly(4-vinyl-N-methylpyridinium iodide) (P4VPMe⁺I⁻) polycationic outer shell and two different architectures (core-cross-linked micelles, CCM, and nanogels, NG), with narrow size distributions around 130–150 nm in diameter, were synthesized by RAFT polymerization from an R₀-4VPMe⁺I⁻₁₄₀-b-S₅₀-SC(S)SPr macroRAFT agent by either chain extension with a long (300 monomer units) hydrophobic polystyrene-based block followed by cross-linking with diethylene glycol dimethacrylate (DEGDMA) for the CCM particles, or by simultaneous chain extension and cross-linking for the NG particles. A core-anchored triphenylphosphine (TPP) ligand functionality was introduced by using 4-diphenylphosphinostyrene (DPPS) as a comonomer (5–20 % mol mol⁻¹) in the chain extension (for CCM) or chain extension/cross-linking (for NG) step. The products were directly obtained as stable colloidal dispersions in water (latexes). After loading with [RhCl(COD)]₂ to yield [RhCl(COD)(TPP@CCM)] or [RhCl(COD)(TPP@NG)], respectively, the polymers were used as polymeric nanoreactors in Rh-catalyzed aqueous biphasic hydrogenation of the model substrates styrene and 1-octene, either neat (for styrene) or in an organic solvent (toluene or 1-nonanol). All hydrogenations were rapid (TOF up to 300 h⁻¹) at 25 °C and 20 bar of H₂ pressure, the biphasic mixture rapidly decanted at the end of the reaction (<2 min), the Rh loss was negligible (<0.1 ppm in the recovered organic phase), and the catalyst phase could be recycled 10 times without significant loss of catalytic activity.