Simulation is essential for embedded control systems with task jitter

Sampling or task jitter affects the performance of digital control systems but realistic simulation of this effect has not been possible to date. Our previous work has developed a novel method to simulate sampling jitter in MATLAB/Simulink simulation software where the jitter is generated randomly. What has been missing is a way to capture sampling jitter from a target platform and then feed this timing information into the simulation. This paper presents a low-cost and novel solution to these problems. The method uses an Arduino board to capture task jitter from two different hardware platforms with multiple stressing conditions. Then the recorded performance data is used to drive realistic simulations of a control system. Measurement shows that the task jitter data does not follow any specific random distribution such as Gaussian or Uniform. Furthermore, very occasional timing patterns, which may not be picked up while testing a real system, can result in extreme controller responses. This novel method allows comparisons of different platforms and reduces the effort required to choose the most appropriate platform for full implementation.

     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

固态继电器为电动汽车电池监测提供便利

电动汽车常被喻作“归来的孩子”，因为这项技术在多年前进入市场后便一直沉寂，直至最近才再次活跃起来。其实，电动汽车早于1835年首次于美国出现，到1899年，纽约市接近90％的出租车都是由电力驱动。然而，当电力启动器和内燃机变得完善时，电动汽车的使用就迅速衰退。随着如今对环境保护的关注，由燃烧碳氢化合物造成的污染，加之汽油成本高升的影响，再次     

Five Novel Taccalonolides from the Roots of the Vietnamese Plant Tacca paxiana

Chemical investigation of the roots of the Vietnamese plant Tacca paxiana resulted in the isolation of five new steroidal compounds, taccalonolide R ( 6 ), S ( 7 ), T ( 8 ), U ( 9 ), and V ( 10 ). Their structures were established on the basis of NMR and mass‐spectral data. In addition, the five known taccalonolides A ( 1 ), B ( 2 ), E ( 3 ), K ( 4 ), and N ( 5 ) were also isolated and identified.     

Effect of solvent nature on spin exchange in rigid nitroxide biradicals

Intramolecular electron spin exchange as a function of temperature and solvent viscosity and polarity has been studied by X-band electron paramagnetic resonance (EPR) spectroscopy in two rigid nitroxide biradicals existing in one spatial conformation only. Temperature variations of the isotropic hyperfine splitting constanta and exchange integral value |J/a| were measured from EPR spectra and subsequently analyzed. The interaction of polar solvent molecules with >N-O fragments of nitroxide groups led to a slight decrease of the |J/a| value with the increase of temperatureT. In contrast, the interaction of polar solvent molecules with functional groups inside the bridge resulted in a noticeable increase of |J/a| vs.T. In the last case, a coverse relationship between the values of |J/a| and the hyperfine splitting constanta has been observed for solvents with different polarity.     

Effect of exponentially graded base doping on the performance ofGaAs/AlGaAs heterojunction bipolar transistors

The authors have fabricated n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with base doping graded exponentially from 5×10¹⁹ cm^-3 at the emitter edge to 5×10¹⁸ cm^-3 at the collector edge. The built-in field due to the exponentially graded doping profile significantly reduces base transit time, despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping of 1×10¹⁹ cm^-3 , the cutoff frequency is increased from 22 to 31 GHz and maximum frequency of oscillation is increased from 40 to 58 GHz. Exponentially graded base doping also results ill consistently higher common-emitter current gain than uniform base doping, even though the Gummel number is twice as high and the base resistance is reduced by 40%     

Determination of uranium and thorium isotopes in soil samples by coprecipitation

Summary The paper presents a procedure to prepare soil samples for U and Th isotope measurement by alpha-spectrometry after coprecipitation with LaF₃. In this procedure the reduction of U(VI) to U(IV) was performed by Zn metal in 4M HCl solution. The recoveries of chemical separation equal to e_U-chemistry = 78±4% for uranium and e_Th-chemistry = 82±4% for thorium. Canberra alpha-spectrometer was used with PIPS detectors of A-1200-37-AM Model of 1200 mm² active area. The counting efficiency of the measuring system equals to e_counting = 18% and the total efficiencies were e_U = e_counting ^.e_U-chemistry = 14.0±0.7% for uranium and e_Th = e_counting ^.e_Th-chemistry = 14.7±0.7% for thorium. The recoveries of chemical separation were rather high (about 80%), that leads to the use of a small weight of soil sample (about 0.5 g). The efficiencies were also stable, that allows analyzing the soil sample without using radiotracers. They are advantages of the sample preparation procedure of this work.     

High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping andInGaAs emitter contacts

The authors have developed a modified MBE growth process to produce high-gain n-p-n GaAs-AlGaAs heterojunction bipolar transistors (HBTs) with a mean time to failure (MTTF) of 1.5×10⁸ h at 125°C. Beryllium incorporation and diffusion are controlled through a combination of reduced substrate temperature and increased As/Ga flux ratio during MBE growth, resulting in extremely stable HBT profiles. The authors also demonstrate graded InGaAs surface layers with nonalloyed refractory metal contacts that significantly improve ohmic reliability compared to alloyed AuGe contacts. The ability to produce robust HBTs by MBE is critically important to this technology