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An A-loop is a loop in which every inner mapping is an automorphism. A problem which had been open since 1956 is settled by showing that every diassociative A-loop is Moufang.

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We have made direct pump–probe measurements of spin lifetimes in long wavelength narrow-gap semiconductors at wavelengths between 4 and 10 μm and from 4 to 300 K. In particular, we measure remarkably long spin lifetimes, τs300 ps, even at 300 K for epilayers of degenerate n-type InSb. In this material the mobility is approximately constant between 77 and 300 K, and we find that τs is approximately constant in this temperature range. In order to determine the dominant spin relaxation mechanism we have investigated the temperature dependence of τs in non-degenerate lightly n-type Hg0.78Cd0.22Te of approximately the same band gap as InSb, and find that τs varies from 356 ps at 150 K to 24 ps at 300 K. Our results, both in magnitude and temperature dependence of τs, imply that the Elliott–Yafet model dominates in these materials.  相似文献   
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Three‐component photoinitiators comprised of an N‐arylphthalimide, a diarylketone, and a tertiary amine were investigated for their initiation efficiency of acrylate polymerization. The use of an electron‐deficient N‐arylphthalimide resulted in a greater acrylate polymerization rate than an electron‐rich N‐arylphthalimide. Triplet energies of each N‐arylphthalimide, determined from their phosphorescence spectra, and the respective rate constants for triplet quenching by the N‐arylphthalimide derivatives (acquired via laser flash photolysis) indicated that an electron–proton transfer from an intermediate radical species to the N‐arylphthalimide (not energy transfer from triplet sensitization) is responsible for generating the initiating radicals under the conditions and species concentrations used for polymerization. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 4009–4015, 2004  相似文献   
5.
The surface compositions and morphologies of melt‐quenched blends of isotactic polypropylene (iPP) with aspecific poly(ethylene‐co‐propylene) rubber (aEPR) were characterized by atomic force microscopy, optical microscopy, and X‐ray photoelectron spectroscopy. The surface morphologies and compositions formed in the melt are frozen‐in by crystallization of the iPP component and, depending on the processing conditions, are enriched in iPP or aEPR or contain a phase‐separated mix of iPP and aEPR. Enrichment of iPP is observed for blends melted in open air, in agreement with earlier work showing the high surface activity of atactic polypropylene at open interfaces. Surface segregation of iPP is suppressed at confined interfaces. Blends melt‐pressed between hydrophilic and hydrophobic substrates have phase‐separated iPP and aEPR domains present at the surface, which grow in size as the melt time increases. Surface enrichment of aEPR is observed after exposing melt‐pressed blends to n‐hexane vapor, which preferentially solvates aEPR and draws it to the surface. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 421–432, 2004  相似文献   
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蓝牙工业界有一个雄心勃勃的计划,要将整个蓝牙接收器/发射器的价格控制在仅仅5美元,其中包括了基于DSP的子系统及相应的ROM和RAM。而这要等到蓝牙无线技术有了相当大的市场规模,并且通过大规模的投产来产生经济效益之后,才有可能成为现实。在这场角逐中,某些制造商可能会抢占先机。例如,到2001年6月,CSR公司已经生产了超过1百万块BlueCore单片蓝牙产品,目前市场上带蓝牙功能的所有终端用户产品中,48%都采用了这款芯片。本文介绍了CSR所采用的一些产品设计方法,以尽可能降低蓝牙产品的成本,同时还介绍了可能影响蓝牙产品…  相似文献   
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We do the tentative beginnings of a study of BLT-sets of generalised quadrangles via their symmetries. In particular, the study of whorls about a line leads us to hyperbolic reflections preserving a BLT-set of Q(4, q).  相似文献   
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Periodic line structures with a period of 167 nm and linewidths varying from 30 to 100 nm have been produced in polyimide by direct ablation with a KrF laser using an interferometric technique. The characteristics of this interferometer as it applies to the ablation of these line structures, including linewidth and alignment sensitivity, are analyzed. The ability to control the linewidth by varying the average incident fluence is described theoretically and demonstrated experimentally. This externally generated period of 167 nm also prevents the spontaneous growth of laser induced periodic surface structures (LIPSS).  相似文献   
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