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1.
Dehydropeptides containing dehydroamino acid (ΔAA) are frequently found in natural resources with important biological activity. Herein, we report the selective synthesis of Z- and E-ΔAbu from l- and l-allo-threonine as starting materials through selenation and oxidative elimination. The detailed reaction mechanism of phosphine-assisted selenoether formation is also discussed.  相似文献   
2.
A gas-filled type of recoil separator for heavy element research was installed at an experimental hall of RIKEN Linear Accelerator facility to realize getting higher intensity of primary beam and long beam time. Performance of the separator was studied using target recoils and various nuclear reactions. The results show the high performance of the separator for heave element research. As an application of the GARIS, production and identification of an isotope of the 110th element 271[110] have been performed using the 208Pb(64Ni,1n)271[110] reaction. Three decay chains coincide well both in decay times and energies with the ones reported by the group of SHIP experiment at GSI, Germany. Our results provide a confirmation of the synthesis of an isotope 271[110] of element 110.  相似文献   
3.
An improved high-performance liquid-chromatographic (HPLC) assay for the simultaneous determination of serotonin (5-HT) and 5-hydroxyindole-3-acetic acid (5-HIAA) in human urine is reported. Following the automated precolumn derivatization of urinary 5-HT and 5-HIAA with benzylamine, the derivatives are separated by isocratic elution on a reversed-phase C18 semi-microbore column, and are fluorometrically detected at an excitation wavelength of 345 nm and an emission wavelength of 480 nm. The detection limits of 5-HT and 5-HIAA are 7 and 5 nmol/l in urine (0.7 and 0.5 fmol/20-microl injection). The proposed automatic method permits a highly selective and sensitive determination of 5-HT and 5-HIAA in human urine without any sample purification.  相似文献   
4.
A new “bright blood” strategy, outflow refreshment imaging, is introduced in which a number of overlapping slices are excited in rapid succession. Flowing spins that refresh each overlapped slice portion contribute a bright signal. Additionally, static tissue in each non-overlapped slice portion also yields a bright signal. However, the flow/static contrast is comparable to that produced in inflow refreshment images, and angiograms can be generated by conventional maximum intensity projection processing. The dual ability to visualize angiograms and static tissue images is a major benefit of the strategy. Computer simulations of flow sensitivities and in vivo results are presented which compare the outflow and inflow refreshment imaging strategies.  相似文献   
5.
We developed a scanning microwave microscope (SμM) designed for high-throughput electric-property screening as well as for rapid construction of electronic phase diagrams at low temperatures. As a sensor probe, we used a high-Qλ/4 coaxial cavity resonator to which a thin needle with ball-tip end was attached. The sensor module was mounted on the low-temperature XYZ stage, which allowed us to map out the change of resonance frequency and quality factor due to the local tip-sample interaction at low temperatures. From the measurements of combinatorial thin films, such as Ti1−xCoxO2−δ and Nd0.9Ca0.1Ba2Cu3O7−δ (NCBCO), it was demonstrated that this SμM system has enough performance for the high-throughput characterization of sample conductance under variable temperature conditions.  相似文献   
6.
Selective oxidation of an AlInAs layer was investigated for enhancement of magneto-optic effect in an optical isolator. Twelve times nonreciprocal phase shift enhancement was estimated from a measured AlInAs-oxide refractive index.  相似文献   
7.
This paper describes a new write/erase method for flash memory to improve the read disturb characteristics by means of drastically reducing the stress leakage current in the tunnel oxide. This new write/erase operation method is based on the newly discovered three decay characteristics of the stress leakage current. The features of the proposed write/erase method are as follows: 1) the polarity of the additional pulse after applying write/erase pulse is the same as that of the control gate voltage in the read operation; 2) the voltage of the additional pulse is higher than that of a control gate in a read operation, and lower than that of a control gate in a write operation; and 3) an additional pulse is applied to the control gate just after a completion of the write/erase operation. With the proposed write/erase method, the degradation of the read disturb life time after 106 write/erase cycles can be drastically reduced by 50% in comparison with the conventional bipolarity write/erase method used for NAND type flash memory. Furthermore, the degradation can he drastically reduced by 90% in comparison with the conventional unipolarity write/erase method fur NOR-, AND-, and DINOR-type flash memory. This proposed write/erase operation method has superior potential for applications to 256 Mb flash memories and beyond  相似文献   
8.
An InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) is expected to show very large electrorefractive index change. n in a wideband transparency region. Band structures of the FACQW are analyzed with Luttinger-Kohn Hamiltonian. The electrorefractive characteristics of the FACQW are discussed.  相似文献   
9.
The reliability of InP-based HEMTs is studied, focussing on how it is affected by the doped layer material and gate recess structure. Bias-and-temperature stress tests reveal that fluorine-induced donor passivation in the recess region, formed adjacent to the gate electrode, causes the source resistance (Rs) to increase at large drain bias voltages. The increase in Rs can be prevented by using InP or InAlP as the carrier supply layer material instead of InAlAs. On the other hand, the increase in the drain resistance (Rd) does not depend on the material of the carrier supply layer, which suggests that a mechanism different from that in the case of Rs should be considered. It is also found that a deep gate recess suppresses the increase in Rd after long-term stressing.  相似文献   
10.
The effect of moisture on the mechanical relaxation processes of semiaromatic semicrystalline polyamides synthesized by a long‐chain aliphatic diamine and terephthalic acid was investigated by dynamic viscoelastic analysis (DVA) and differential scanning calorimetry (DSC). Moreover, the implication of moisture with the amorphous and crystalline domains was also examined by temperature‐dependent wide‐angle X‐ray diffraction and Fourier transform infrared spectra. The characteristics of the relaxations such as α, β, γ, and the pronounced peak shoulder appeared at 25–100 °C in DVA tan δ curves were found to be strongly susceptible to the presence of moisture. With moisture evaporation, the peak shoulder of 25–100 °C and the β‐relaxation disappeared. The former is anticipated to originate from to the side group motion of hydrogen‐bonded water, whereas the later one is from the motions of the amide–water complex units. With the disappearance of the β‐relaxation, the γ‐relaxation appeared simultaneously in much lower temperatures and ultimately coupled with the δ‐relaxation. The γ‐relaxation is attributed to be associated with the molecular motion of the amide group and δ‐relaxation with for the motion of the methylene units. The existence of two types of water was identified in the polymer, namely, tightly bound and loosely bound. The tightly bound water is believed to be directly connected by hydrogen bonding with the strong polar groups and the loosely bound water weakly links with those connected water making hydrogen bridges. The moisture acts as a plasticizer in the polymer matrix, which causes quite a large depression in its glass transition temperature (Tg). WAXD and FTIR studies corroborated the existence of water solely in amorphous regions, i.e., no rapport of water with the crystalline parts. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 2878–2891, 2003  相似文献   
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