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1.
Morton P.A. Ackerman D.A. Shtengel G.E. Kazarinov R.F. Hybertsen M.S. Tanbun-Ek T. Logan R.A. Sergent A.M. 《Photonics Technology Letters, IEEE》1995,7(8):833-835
We describe the important characteristics of high-speed p-doped compressively strained MQW lasers obtained from comprehensive below-threshold DC measurements. Results of gain and differential gain versus wavelength and carrier density are verified by above-threshold resonance measurements. Measurement-derived design curves of gain, differential gain, and linewidth enhancement factor allow device optimization for high speed and low chirp 相似文献
2.
M.C. Wu Y.K. Chen T. Tanbun-Ek R.A. Logan M.A. Chin 《Photonics Technology Letters, IEEE》1991,3(10):874-876
The tunabilities of both the wavelength and the pulse-width of monolithic mode-locked semiconductor lasers are demonstrated. Pulses shorter than 1.6 ps, tunable over 8.8 mu m, have been generated by a temperature-tuned monolithic colliding pulse mode-locked (CPM) quantum-well laser. For a fixed wavelength, the pulse-width is independently controlled from 1.2 ps to longer than 3 ps by external bandpass filters. Near transform-limited time-bandwidth products of 0.34 were maintained throughout the tuning processes.<> 相似文献
3.
Chen Y.-K. Temkin H. Tanbun-Ek T. Logan R.A. Nottenburg R.N. 《Electron Device Letters, IEEE》1989,10(4):162-164
Buried p-buffer double heterostructure modulation-doped field-effect transistors (BP DH-MODFETs) with an InGaAs quantum-well channel were fabricated with high transconductance and good breakdown voltage, by placing the metal gate directly on Fe-doped InP insulating layer. Excellent extrinsic DC transconductance of 560 mS/mm and a high gate-to-drain diode breakdown voltage (greater than 20 V) were achieved at room temperature with FETs of 1.2-μm gate length. Unity currently gain cutoff frequency f T of 24 GHz and maximum oscillation frequency f max of 60 GHz were demonstrated for a drain to source voltage V DS=4 V, which corresponds to an average electron velocity of 2.2×107 cm/s in the quantum well 相似文献
4.
Morton P.A. Tanbun-Ek T. Logan R.A. Sergent A.M. Sciortino P.F. Coblentz D.L. 《Photonics Technology Letters, IEEE》1992,4(2):133-136
The authors describe a new technique for extracting the intrinsic laser-diode dynamic properties accurately. This simple technique eliminates the need for accurate microwave calibration of the test equipment and problems of microwave reflections, nonideal frequency response of laser mount, and detector. The effect of the parasitic components of the laser diode are also eliminated from the results so that measurements of important dynamic properties of the laser can be found up to high frequencies (10-20 GHz) on standard laser diodes. The techinque being used to measure variations of resonance peak and damping factor at different bias levels for a standard bulk active region 1.3 μm laser diode is shown 相似文献
5.
16 Gbit/s all-optical demultiplexing using four-wave mixing 总被引:3,自引:0,他引:3
Andrekson P.A. Olsson N.A. Simpson J.R. Tanbun-Ek T. Logan R.A. Haner M. 《Electronics letters》1991,27(11):922-924
A novel, purely optical technique for demultiplexing high-speed time-division multiplexed data is proposed and demonstrated. The technique uses optical fibre nonlinearity induced four-wave mixing with a data signal and a probe signal located at different wavelengths. Using only semiconductor laser light sources, 1:4 demultiplexing of 20 ps long, subpicojoule, 2/sup 15/-1 RZ pulses at a data rate of 16 Gbit/s with less than 1 dB penalty is demonstrated.<> 相似文献
6.
DFB lasers with CW threshold currents as low as 8 mA at room temperature have been fabricated using the VPE transport process. The low threshold currents are attributed to narrow active stripes and to the high coupling strength of the grating. Single-mode lasing at 1.53?m up to I = 8Ith and during high-speed direct modulation has been confirmed. 相似文献
7.
H. Temkin T. Tanbun-Ek R.A. Logan D.A. Cebula A.M. Sergent 《Photonics Technology Letters, IEEE》1991,3(2):100-102
The temperature dependence of lattice matched and strained InGaAs-InP quantum well lasers operating between 1.48 and 1.56 mu m is described. Devices grown under tensile and compressive strain, with an In concentration in the range of 0.43> 相似文献
8.
P.B. Hansen G. Raybon J.M. Wiesenfeld C.A. Burrus R.A. Logan T. Tanbun-Ek H. Temkin 《Photonics Technology Letters, IEEE》1991,3(11):1018-1020
A semiconductor laser amplifier (SLA) has been employed successfully for optical demultiplexing in two-channel optical time division multiplexed system experiments at 6 and 2 Gb/s. Demultiplexing of 6-Gb/s (2-Gb/s) signals was demonstrated with a power penalty of 1.6 dB (3.0 dB) at bit error rates of 10/sup -9/. It is also shown that a reduction of the generated amplified spontaneous emission can be obtained by optical gating/demultiplexing for systems incorporating inline amplifiers. A 0.5-dB improvement in sensitivity was achieved as a result of using an SLA for demultiplexing from 2.0 to 1.0 Gb/s in a system with one inline Er/sup 3+/-doped fiber amplifier.<> 相似文献
9.
T. Tanbun-Ek R. People T. Fullowan C. Bethea A.M. Sergent P.W. Wisk P.F. Sciortino Jr. S.N.G. Chu W.T. Tsang 《Photonics Technology Letters, IEEE》1997,9(5):563-565
The fabrication of the first 1.55-/spl mu/m wavelength tunable electroabsorption modulated laser integrated with a bent waveguide distributed-feedback laser is reported. A low-threshold and stable single-mode operation is obtained when the devices were uniformly pumped. A single-mode output power close to 10 mW from a single-mode fiber (40 mW in free space) is obtained with a 0 V bias to the modulator and an extinction ratio of up to 15 dB at 2.5 V. This single mode stability is due to the continuously distributed phase shift implemented in the structure. With a nonuniform injection, it was possible to select one particular mode out of the three neighboring modes inside the broad-reflection band of the reflector. A tuning range of 3.5 mm was obtained while maintaining an output power of more than 2 dBm from each mode. 相似文献
10.
Lee B.-T. Logan R.A. Kalicek R.F. Jr. Sergent A.M. Coblentz D.L. Wecht K.W. Tanbun-Ek T. 《Photonics Technology Letters, IEEE》1993,5(3):279-281
1.3-μm InGaAsP/InP buried heterostructure lasers were fabricated using Ch4/H2 reactive ion etching (RIE) for mesa definition and metalorganic chemical vapor deposition for blocking laser growth. Results show that high-quality lasers can be made using RIE, with threshold current as low as 10 mA. It was also found that a slight chemical etching of the RIE mesas was necessary to obtain lasers with as high quality as those fabricated entirely by wet etching 相似文献