Pectic Galactan Polysaccharide-Based Gene Delivery System for Targeting Neuroinflammation

Treating neuroinflammation-related injuries and disorders through manipulation of neuroinflammation functions is being heralded as a new therapeutic strategy. In this study, a novel pectic galactan (PG) polysaccharide based gene therapy approach is developed for targeting reactive gliosis in neuroinflammation. Galectin-3 (Gal-3) is a cell protein with a high affinity to β-galactoside sugars and is highly expressed in reactive gliosis. Since PG carries galactans, it can target reactive gliosis via specific carbohydrate interaction between galactan and Gal-3 on the cell membrane, and therefore can be utilized as a carrier for delivering genes to these cells. The carrier is synthesized by modifying quaternary ammonium groups on the PG. The resulting quaternized PG (QPG) is found to form complexes with plasmid DNA with a mean diameter of 100 nm and have the characteristics required for targeted gene therapy. The complexes efficiently condense large amounts of plasmid per particle and successfully bind to Gal-3. The in vivo study shows that the complexes are biocompatible and safe for administration and can selectively transfect reactive glial cells of an induced cortical lesion. The results confirm that this PG-based delivery system is a promising platform for targeting Gal-3 overexpressing neuroinflammation cells for treating neuroinflammation-related injuries and neurodegenerative diseases.     

Differential Game for Distributed Power Control in Device-to-Device Communications Underlaying Cellular Networks

Wireless Personal Communications - In the formulating of power control for wireless networks, the radio channel is commonly formulated using static models of optimization or game theory. In these...     

A power-driven multiplication instruction-set design method for ASIPs

This paper presents a novel power-driven multiplication instruction-set design method for application-specific instruction-set processors (ASIPs). Based on a dual-and-configurable-multiplier structure, our proposed method devises a multiplication instruction set for low-power ASIPs. Our method exploits the execution sequences of multiplication instructions and effective bit widths of variables to reduce power consumed by redundant multiplication bits while minimizing the multiplication execution time. Experimental results on a set of DSP programs demonstrate that our proposed method achieves significant power reduction (up to 18.53%) and execution time improvement (up to 10.43%) with 18% area overhead.     

Optically preamplified receiver performance due to VSB filtering for 40-Gb/s optical signals modulated with various formats

Optically preamplified receiver performance according to the vestigial sideband (VSB) filtering has been numerically investigated for 40-Gb/s optical signals modulated with nonreturn-to-zero, duobinary nonreturn-to-zero (NRZ), return-to-zero (RZ), carrier-suppressed RZ, and duobinary carrier-suppressed RZ formats. The VSB filtering enables the spectral widths of NRZ, duobinary NRZ, and RZ signals to be reduced without severe power penalties at the receiver. On the other hand, carrier-suppressed RZ and duobinary carrier-suppressed RZ signals have no large advantages over VSB filtering because of the characteristics of their signals. Our results suggest that RZ signals are the most suitable modulation format for VSB filtering, without considering the filter loss, because of the tolerance of the intersymbol interference and a large spectral width. However, duobinary NRZ signals are the most suitable modulation format for VSB filtering, considering the filter loss, because of their narrow spectral width.     

Improved Yen-Joye's authenticated multiple-key agreement protocol

An authenticated multiple-key agreement protocol is proposed. The protocol is not only secure against the unknown-key attack but also more efficient than other protocols.     

Dielectric reliability of stacked Al2O3–HfO2 MIS capacitors with cylinder type for improving DRAM data retention characteristics

Dielectric reliability in Al₂O₃(2–3.1nm)–HfO₂(3nm) stack capacitor with Metal–Insulator–Si(MIS) structure is investigated in this paper. We propose an optimized capacitor process through the Time–Dependent Dielectric Breakdown (TDDB) data under various process conditions. Furthermore, due to asymmetric current at both negative and positive voltage stress polarities, we show different lifetime extrapolation by a fluence–driven model. As a result, the maximum allowed operating voltage is projected to be 1.7V (failure rate 10ppm during 10year @ 85°C) for Data “0” retention lifetime.     

2/spl times/4 optical add-drop module with no difference in propagation length

We developed a micromachined X-type 2/spl times/4 optical add-drop module (OADM) featuring no difference in propagation length. Four pairs of lensed fibers are aligned in "X" position, and four micromirrors are located between the pairs of optical fibers. The OADM was fabricated utilizing a silicon-on-insulator process. Electrostatic comb actuators can be driven up to 90 /spl mu/m to change the light path within 1 ms. The insertion loss and the on-off ratio were less than 3 and 70 dB, respectively. The loss uniformity in every channel was 1.5 dB.     

Mode Matching Analysis of a Tapered Coaxial Tip in a Parallel-Plate Waveguide

A tapered coaxial tip in a parallel plate waveguide is investigated. A boundary-value problem of electromagnetic scattering from a tapered coaxial monopole is solved rigorously based on the Fourier transform, eigenfunction expansion, and mode matching. Scattering parameters are represented in a series and computed to understand the behavior of the scattering in terms of the coaxial tip geometry.     

Band bending at the Ni/Si(100)-2×1 submonolayer interface

Band bending at the Ni/Si(100)-2×1 interface has been monitored by using Si 2p core level photoemission spectra. Two nickel-induced Si 2p components appear in the initial interaction between Ni and Si(100)-2×1, which is confined at the top surface and the first subsurface layers. At Ni coverage less than 0.0375 ML, Ni atoms prefer the adamantane interstitial sites on the first subsurface, but switch to the pedestal sites on Si dimer rows at higher Ni coverage. The change in the preferred occupation sites of Ni atoms on the Si(100)-2×1 surface strongly affects the amount of band bending shift. The shift towards higher binding energy, when Ni atoms occupy the adamantane interstitial sites, is attributed to metal-induced-gap states. While Ni atoms occupy the pedestal sites, the band bending shift is reduced which is attributed to the passivation of surface states.