Nonameric porphyrin assemblies--formation and intra-assembly energy transfer reactions

The nonameric porphyrin assemblies constructed with the series of free base tetraphenylporphyrins Pn having four pyrazine moieties linked with alkyl chains of different lengths, (CH2)n (n = 1, 5, 9, 17, 30), and dimeric [meso-tetrakis(2-carboxy-4-nonylphenyl)porphyrinato]zinc(II), ZnP2, show the effective light-collection effect and the typical Forster-type energy transfer from ZnP2 to Pn.     

Low chirp operation in 1.6 μm quantum dot laser under 2.5 GHzdirect modulation

A long wavelength InAs quantum dot laser on an InP substrate was operated under continuous wave current at room temperature and had a threshold current of 20 mA. Modulation bandwidth was 4 GHz and the low chirp of around 0.01 nm in lasing wavelength was achieved during 2.5 GHz current modulation     

High-temperature characteristics of 1.3-μm InAsP-InAlGaAs ridgewaveguide lasers

High-temperature characteristics of InAsP-InAlGaAs strained multiquantum-well (MQW) lasers with a large conduction band discontinuity (ΔE_c) are demonstrated. The InAsP-InAlGaAs MQW ridge waveguide lasers with narrow stripes exhibited a characteristic temperature as high as 143 K in the range from 25°C to 85°C. This material system is promising for developing a cooling-system-free 1.3-μm laser     

High reliability of 1.5 ?m two-step VPE-LPE-grown DC-PBH lasers

The reliability of 1.5 ?m InGaAsP/InP DC-PBH lasers prepared by two-step hydride VPE and LPE was estimated at the 70°C, 5 mW constant-power mode. The low degradation rate (8×10?5/h) indicated high reliability of the two-step VPE-LPE-grown LDs with the VPE-grown active layer.     

Extremely low loss 4*4 GaAs/AlGaAs optical matrix switch

A 4*4 GaAs/AlGaAs optical matrix switch with an extremely low loss of 1.6 dB has been developed. This low loss switch was achieved by layer structure modification, to reduce free-carrier absorption, reduction of plasma damage while dry etching, and an improvement in the crystal quality.<>     

Continuous-wave operation of 1.30μm GaAsSb/GaAs VCSELs

1.30 μm VCSELs using GaAsSb quantum wells, which operate continuous-wave at and above room temperature (RT), are reported. A threshold current as low as 1.2 mA at RT and a maximum CW operating temperature of 70°C are demonstrated     

Low-threshold operation of 1.3-μm GaAsSb quantum-well lasersdirectly grown on GaAs substrates

GaAsSb quantum-well (QW) edge-emitting lasers grown on GaAs substrates were demonstrated. The optical quality of the QW was improved by optimizing the growth conditions and introducing a multi-QW to increase the gain. As a result, 1.27-μm lasing of a GaAs_0.66 Sb_0.34-GaAs double-QW laser was obtained with a low-threshold current density of 440 A/cm², which is comparable to that in conventional InP-based long-wavelength lasers. 1.30 μm lasing with a threshold current density of 770 A/cm² was also obtained by increasing the antimony content to 0.36. GaAsSb QW was found to be a suitable material for use in the active layer of a 1.3-μm vertical-cavity surface-emitting lasers     

Light-harvesting heptadecameric porphyrin assemblies

New porphyrin assemblies containing 17 porphyrin molecules are constructed by using free base TPP-type porphyrins having eight pyrazine moieties 1. Spectroscopic titration of dimeric [meso-tetrakis(2-carboxy-4-nonylphenyl)porphyrinato]zinc(II) 2 with these porphyrins shows that the processes of the formation of the heptadecameric porphyrin assemblies may be analyzed as eight independent equilibrium processes with an identical binding constant. All binding constants are larger than 5 x 107 M-1 which is the determinable upper limit of the present titration method. In all cases, the fluorescence spectrum of the 1:8 mixture of 1 and 2 consists of the major fluorescence of 1 and the minor one of 2.pyrazine complex even in the presence of the large excess of the antenna pigments. The observed spectra are well reconstructed by the form of faF1 + fbF2, where F1 and F2 are the fluorescence of 1 and the 2.pyrazine complex measured separately at the corresponding concentrations. Interestingly, the general trend that values of fa are nearly equal to those of r564 x (1 - fb) in all cases is found, where r564 is the absorption ratios of the 2.pyrazine moiety and the central free base porphyrin in the assemblies at 564 nm. The observation indicates the excitation of the central porphyrin is directly enhanced by the absorption of the antenna pigments even in such large scale assemblies. Thus, the antenna effect for 1 having largest r564 results in 77 times fluorescence enhancement of the central free base porphyrin. The systems also show interesting dependency of energy-transfer efficiencies on the topological arrangement of the antenna elements.     

Alloy composition and flow rates in GaxIn1?xAsyP1?y lattice-matched to InP grown by MO-CVD

Relations between alloy compositions and flow rates of sources in TEG/TEI/AsH3/PH3/H2 LP-MOCVD system for the growth of GaInAsP/InP were experimentally studied under lattice-matching and high crystalline quality enough for laser oscillation. A proportional relationship was observed between the alloy of Ga/In and source of TEG/TEI, As/P and AsH3/PH3 over the bandgap wavelength of 1.3?1.6 ?m.     

Spontaneous one-dimensional lateral alignment of multistacked InGaAs quantum dots on GaAs (n 1 1)B substrates

In_0.45Ga_0.55As/GaAs multistacking quantum dot (QD) structures were fabricated on a GaAs (n 1 1)B (n=2–4) substrate by metalorganic vapor-phase epitaxy. QDs spontaneously aligned in the [0 1 1] direction were observed on stacked QDs, whereas QDs were randomly distributed in the initial In_0.45Ga_0.55As layer growth. The formation mechanism of this self-alignment was studied by changing the number of In_0.45Ga_0.55As/GaAs multilayers and crystallographic arrangement. Photoluminescence spectra showing clear polarization dependence indicate carrier coupling in the QD arrays. This growth technique results in spontaneously aligned InGaAs QDs without any preprocessing technique prior to growth.