Lasting chemiluminescence of 3-indoleglyoxylyl chloride and its enhancement.

The chemiluminescence (CL) intensities of various indole derivatives substituted with a glyoxylyl group at the 3-position and a hydroxyl group at the 5-position of the indole ring were compared upon the addition of H2O2 in alkaline media. The CL intensities of 3-indoleglyoxylyl chloride, 3-indoleglyoxylic acid, 5-hydroxyindole and 5-benzyloxyindole in CH3CN were 5.9-, 48-, 5.9- and 3.3-fold stronger than that of 3-methylindole. A lasting CL of 3-indoleglyoxylyl chloride was found. Under appropriate conditions, the CL emission reached a maximum within 10 min after the addition of H2O2 in the presence of NaOH, and the intensity was retained for 25 min. One of the final products via the CL reaction of 3-indoleglyoxylyl chloride was indole-3-carboxylic acid. 3-Indoleglyoxylyl chloride emitted light by decompositions via both dioxetane and dioxetanedione. An enhancement effect of beta-cyclodextrin and bovine serum albumin on the CL of 3-indoleglyoxylyl chloride was also found.     

A 0.1-μm delta-doped MOSFET fabricated with post-low-energyimplanting selective epitaxy

A simple fabrication technology for delta-doped MOSFETs, named post-low-energy implanting selective epitaxy (PLISE) is presented. The PLISE technology needs no additional photo-lithography mask, deposition step or etching step even for CMOS devices. The only additional step is growing undoped epitaxial channel layers by UHV-CVD after the channel implantation. With this technology, delta-doped NMOSFETs with 0.1-μm gate length were successfully fabricated. By optimizing the epi-layer thickness and the channel doping level, short-channel effects are suppressed enough to achieve 0.1-μm gate length. Moreover, the junction capacitance at zero bias is reduced by 50%     

Fiber-optic devices for local area network application

Recent developments on fiber-optic devices are reviewed from the local area network (LAN) application viewpoint. Future technical trends are also discussed, along with current research activities. In local area network systems, low device cost and easy maintenance or maintenance-free devices are especially required. Light sources and photodetectors suitable for the systems are described. InGaAsP/InP light emitting diodes can cover a broad application field, up to a gigabits per second super high-speed network region. Optical passive devices, which include branching couplers, switches and connectors, are mentioned as essential components. Compact transmitter/receiver module technology is a key factor in realizing optical-fiber local area network systems. An example of 200-Mbit/s transmitter/receiver module is reported.     

Volume Contents

Statistical Inference for Stochastic Processes -     

Magnetism in electron-doped copper oxides

We report muon spin relaxation/rotation measurements on sintered powder samples of Nd_2−x Ce _x CuO_4−y and a large single crystal of Nd₂CuO_4−y . We find an electronic phase diagram which is quite similar to that of hole-doped superconductors such as La_2−x Sr _x CuO_4−y , although the doping of electrons into the system is less efficient in destroying the static moments on the copper spins. Static magnetic order in Nd₂CuO_4−y appears below about 250 K, and two spin reorientations are seen atT=75 K andT=35 K. Measurements of the magnetic field penetration depth have been unsuccessful due to the rare-earth paramagnetism of these materials.     

Adsorption of fission products onto soils using a fission multitracer

The adsorption behavior of fission products to various soils was studied using a multitracer. The multitracer was prepared by neutron irradiation of ²³⁵U. Distribution coefficients of fission products were obtained for seventeen kinds of Japanese soils. It was found that zirconium, niobium, and rare earth elements show high distribution coefficients for all soil samples, however, elements like alkali metals show varied values.