Brominated poly(isobutylene‐co‐para‐methylstyrene) (BIMS)‐clay nanocomposites: Synthesis and characterization

In this work, preparation and properties of different nanoclays modified by organic amines (octadecyl amine, a primary amine, and hexadecyltrimethylammonium bromide, a tertiary amine) and brominated polyisobutylene‐co‐paramethylstyrene (BIMS)‐clay nanocomposites are reported. The clays and the rubber nanocomposites have been characterized with the help of Fourier transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM), and X‐ray diffraction (XRD). The X‐ray diffraction peaks observed in the range of 3 °–10 ° for the modified clays disappear in the rubber nanocomposites. TEM photographs show predominantly exfoliation of the clays in the range of 12 ± 4 nm in the BIMS. In the FTIR spectra of the nanocomposites, there are common peaks of virgin rubber as well as those of the clays. Excellent improvement in mechanical properties like tensile strength, elongation at break, and modulus is observed on incorporation of the nanoclays in the BIMS. Structure‐property correlation in the above nanocomposites is attempted. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 4489–4502, 2004     

Electrical properties of N2O/NH3 plasma grownoxynitride on strained-Si

Growth of ultrathin (<100 Å) oxynitride on strained-Si using microwave N₂O and NH₃ plasma is reported. X-ray photoelectron spectroscopy (XPS) results indicate a nitrogen-rich layer at the strained-Si/SiO₂ interface. The electrical properties of oxynitrides have been characterized using a metal-insulator-semiconductor (MIS) structure. A moderately low value of insulator charge density (6.1×10¹⁰ cm^-2) has been obtained for NH₃ plasma treated N₂O oxide sample. Nitrided oxide shows a larger breakdown voltage and an improved charge trapping properties under Fowler-Nordheim (F-N) constant current stress     

Furnace grown gate oxynitride using nitric oxide (NO)

Gate oxynitride was grown in NO for the first time. This approach can provide a tight N accumulation near the Si/SiO₂ interface. Much lower thermal budget is required for an NO process than for an N₂O process to produce an oxynitride with useful properties. Submicron MOSFET's with NO oxynitride showed superior current drive characteristics and comparable hot carrier immunity to those with N₂O oxynitride     

Electrical characterization of low temperature deposited TiO2 films on strained-SiGe layers

Thin films of titanium dioxide have been deposited on strained Si_0.82Ge_0.18 epitaxial layers using titanium tetrakis-isopropoxide [TTIP, Ti(O-i-C₃H₇)₄] and oxygen by microwave plasma enhanced chemical vapor deposition (PECVD). The films have been characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). Dielectric constant, equivalent oxide thickness (EOT), interface state density (D_it), fixed oxide charge density (Q_f/q) and flat-band voltage (V_FB) of as-deposited films were found to be 13.2, 40.6 Å, 6×10¹¹ eV⁻¹ cm⁻², 3.1×10¹¹ cm⁻² and −1.4 V, respectively. The capacitance–voltage (C–V), current–voltage (I–V) characteristics and charge trapping behavior of the films under constant current stressing exhibit an excellent interface quality and high dielectric reliability making the films suitable for microelectronic applications.     

Formatation of pore structure in tape-cast alumina membranes – effects of binder content and firing temperature

Disc type ceramic aluminium oxide membrane has been prepared by tape casting technique. Thickness of this single layer membrane is in the range 200–300 μm. Porosity and pore size distribution have been determined by mercury porosimetry. Polymeric binder content of the green tape and the firing temperature are found to have strong influence on the average pore size, pore size distribution and overall porosity. Higher binder content promotes agglomeration of the ceramic particles, which on firing leads to wider pore size distribution and formation of closed pores. Pore coarsening is observed with increasing firing temperature.     

Polymerization of vinylcarbazole on copper(II)-13X molecular sieves: Role of copper(II) salts

Copper(II)-exchanged-13X molecular sieves, prepared from four copper(II) salts, namely, sulfate, nitrate, chloride, and acetate, and their activities in the polymerization of N-vinylcarbazole at a fixed copper ion exchange level were studied. From the kinetic characteristics of polymerization it was established that the variation in activities of the Cu-exchanged sieves is due primarily to the difference in the pH of the original salt solution, which is responsible for the varying degree of proton exchange with the zeolite during copper ion exchange. A first-order dependence of the rate of polymerization was observed with respect to H⁺ ion concentration of the original copper-salt solution. It was further established that the rate of polymerization of exchanged copper ion, at a hypothetical zero proton concentration, is low. A mechanism of polymerization of NVC on copper-exchanged-13X zeolite was suggested on the basis of the results obtained.     

Nanoparticles from cationic copolymer and DNA that are soluble and stable in common organic solvents

DNA by virtue of its superlative ability to self-assemble has found use beyond biological research in the design and fabrication of nanomaterials. However, developing novel DNA-based materials for chemical applications might be restricted due to the insoluble nature of DNA in most common organic solvents. In this Communication, we are reporting the first demonstration of making DNA soluble in a variety of nonbiological solvents such as acetonitrile, benzene, dimethyl sulfoxide (DMSO), and tetrahydrofuran with the help of poly(ethylene glycol) (PEG)-based cationic random copolymers. Because of complex formation between cationic copolymer and anionic DNA, nanoparticles are formed. These nanoparticles are expected to exhibit micelle-like structures with a nanometric core of cationic units neutralized by phosphate anions of DNA, surrounded by a shell of PEG segments. As PEG is soluble in the organic solvents used in this study, nanoparticles are stable in these solvents, making entrapped DNA soluble in these organic solvents.     

Transition metal carbene chemistry 2: kinetic studies on the nucleophilic substitution reactions of (CO)5MC(SCH3)CH3 (M = Cr and W) with morpholine in aqueous acetonitrile

Kinetic studies of the aminolysis of [methyl(thiomethyl)carbene]pentacarbonyl chromium(0),(CO)₅CrC(CH₃)(SCH₃) (1-Cr(S)) and [methyl(thiomethyl)carbene]pentacarbonyltungsten(0), (CO)₅WC(CH₃)(SCH₃) (1-W(S)), with morpholine, a secondary amine, in 50% acetonitrile-50% H₂O (v/v at 25 °C) is reported. The second-order rate constant (k_A in m⁻¹ s⁻¹) increases with amine concentration, giving a linear dependence with an intercept on the rate axis and a tendency towards leveling off at higher amine concentration. The reaction was found to undergo general base catalysis. The mechanism proposed is very similar to those for ester reactions, involving a nucleophilic addition of amine to the substrate to yield a zwitterionic tetrahedral intermediate in the first step, followed by deprotonation to form in the second step, which, in the third step, converted to product by H₂O and/or conjugate acid of the base (BH⁺), assisted MeS⁻ expulsion. The reactivity (k₁) of 1-W(S) was found to be higher than that of 1-Cr(S), whereas, comparable , water catalyzed and , BH⁺ catalyzed, leaving group departure were found for both the carbenes complexes. All these observations have been explained successfully.     

Chemically assisted ion beam etching of silicon and silicon dioxide using SF6

A chemical flux of sulfur hexafluoride (SF₆) in conjunction with low-energy Ar-ion bombardment has been used for chemically assisted ion beam etching (CAIBE) of silicon and silicon dioxide. The study has shown a large degree of independent control over the selectivity and anisotropy in dry etching. The total etch rate could be controlled by varying either the Ar-ion milling parameters or the chemical flux of SF₆. Etch rate enhancement of 7–8 for silicon and 3–4 for silicon dioxide have been obtained over pure physical etching.     

Synthesis and DNA binding properties of pyrrole amino acid-containing peptides

Dimers of the pyrrole amino acid (Paa), 5-(aminomethyl)pyrrole-2-carboxylic acid, and its derivatives having Lys anchored on N- and C-termini bind in the minor groove of DNA with considerable apparent binding affinities. When the Lys unit is attached to the C-terminus, the resulting ligand binds to ds-DNA with twice the affinity, of the order of 10⁵, than the one carrying two positive charges at the same end.