Implementation of multipoint connections in an ATM switching network

This paper presents the problems in the implementation of multipoint connections at switching level using the example of an ATM switching network. By choosing the proper routeing mechanism and the appropriate architecture of the switching element, a switching network can gradually be adapted to an increasing share of multipoint traffic. The first section describes the problems with the handling of multipoint connections within a multiple stage connection oriented switching network. In particular this refers to the routeing of the cells through the switching network. Several alternatives on this issue are discussed. Both, the selected approach based on a differentiated self-routeing mechanism and the corresponding cell format are introduced. In the second part of this article several switch architectures are compared in respect of their multipoint capability. It is demonstrated that at present the most promising solution are switching elements based on the principle of central buffering. A single chip solution using this concept is employed in the presented switching network.     

Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy

Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy. The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH₃ over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring.     

Local-moment and itinerant antiferromagnetism in the heavy-fermion system Ce(Cu1−xNix)2Ge2

Elastic and inelastic neutron-scattering studies on the system Ce(Cu_1?xNi_x)₂Ge₂ are reported. These measurements are complemented by measurements of the magnetic susceptibility, high-field magnetization, heat capacity, thermal expansion, electrical resistivity and thermopower. The results reveal an interesting T-x phase diagram consisting of two different antiferromagnetic phases for x < 0.2 and 0.2 < x < 0.75, respectively, and a heavy-Fermi-liquid regime at higher Ni concentrations. The experimental results are interpreted in terms of an alloying-induced transition from local-moment to itinerant heavy-fermion magnetism. Fingerprints of this latter phase are a strongly reduced ordered moment and a short incommensurate ordering wave vector, in accord with theoretical predictions. A surprisingly good agreement between theory and experiment is found for x > 0.5. Further experimental evidence for different types of antiferromagnetic ordering derives from a line-shape analysis of the quasielastic neutron-scattering intensity, from magnetization and thermopower experiments.     

Effect of Ga doping on magneto-transport properties in colossal magnetoresistive La0.7Ca0.3Mn1−xGaxO3 (0<x<0.1)

Samples of La_0.7Ca_0.3Mn_1−xGa_xO₃ with x=0, 0.025, 0.05 and 0.10 were prepared by standard solid-state reaction. They were first characterized chemically, including the microstructure. The magnetic properties and various transport properties, i.e. the electrical resistivity, magnetoresistivity (for a field below 8 T), thermoelectric power and thermal conductivity measured each time on the same sample, are reported. The markedly different behaviour of the x=0.1 sample from those with a smaller Ga content, is discussed. The dilution of the Mn³⁺/Mn⁴⁺ interactions with Ga doping considerably reduces the ferromagnetic double exchange interaction within the manganese lattice leading to a decrease of the Curie temperature. The polaron binding energy varies from 224 to 243 meV with increased Ga doping.     

An explicit characterization of Calogero-Moser systems

Combining theorems of Halphen, Floquet, and Picard and a Frobenius type analysis, we characterize rational, meromorphic simply periodic, and elliptic KdV potentials. In particular, we explicitly describe the proper extension of the Airault-McKean-Moser locus associated with these three classes of algebro-geometric solutions of the KdV hierarchy with special emphasis on the case of multiple collisions between the poles of solutions. This solves a problem left open since the mid-1970s.