A control-theoretic approach to distributed discrete-valued decision-making in networks of sensing agents

We address the problem of global sensor fusion for the purpose of distributed decision-making, from a control-theoretic perspective. In particular, we introduce a quasi-linear stochastic distributed protocol, using which a network of sensing agents can reach agreement in order to take a collective action. Using control-theoretic methods, we design the parameters of our protocol - which include weights in the local update rules used by the agents and a finite stopping time - to achieve agreement in a fair and rapid manner. We show analytically that the developed protocol achieves fair agreement with certainty in the noise-free case and achieves fair agreement with high probability even in the presence of communication noise and assuming very little information storage capability for the agents. Our development is illustrated throughout with a canonical example motivated by autonomous vehicle control.     

面心立方晶体外延膜沉积生长中失配位错的结构与形成过程

用分子动力学方法对5%负失配条件下面心立方晶体铝薄膜的原子沉积外延生长进行了三维模拟.铝原子间的相互作用采用嵌入原子法(EAM)多体势计算.模拟结果再现了失配位错的形成现象.分析表明，失配位错在形成之初即呈现为Shockley扩展位错，即由两个伯格斯矢量为〈211〉/6的部分位错和其间的堆垛层错组成，两个部分位错的间距、即层错宽度为1.8 nm,与理论计算结果一致；外延晶体薄膜沉积生长中，位错对会发生滑移，但其间距保持稳定.进一步观察发现，该扩展位错产生于一种类似于“局部熔融-重结晶”的表层局部无序紊乱- 关键词： 失配位错 外延生长 薄膜 分子动力学 铝     

A New Asymmetric Long-Range Model and Algebraic Bethe Ansatz

A new integrable long-range model is derived from a new asymmetric R-matrix recently discussed by Bibikov in relation to a XXZ spin chain in an external magnetic field. The algebraic Bethe Ansatz is used to derive the eigenvalues and equations for the eigen momenta both for the usual and long-range model.     

Modeling and optimization of fringe capacitance of nanoscale DGMOS devices

We analyze the impact of gate electrode thickness and gate underlap on the fringe capacitance of nanoscale double-gate MOS (DGMOS) transistors. We propose an analytical fringe capacitance model considering gate underlap and finite source/drain length. A comparison with the simulation results show that the model can accurately estimate the fringe capacitance of the device. We show that an optimum gate underlap can significantly reduce the fringe capacitance resulting in higher performance and lower power consumption. Also, the effects of process variation in gate underlap devices are discussed. Simulation results on a three-stage ring oscillator show that with optimum gate underlap 32% improvement in delay can be achieved.     

iShopFloor: an Internet-enabled agent-based intelligent shop floor

Global competition is driving manufacturing companies to change the way they do business. New kinds of shop floor control systems need to be implemented for these companies to respond quickly to changing shop floor environments and customer demands. This paper presents a new concept called iShopFloor-an intelligent shop floor based on the Internet, web, and agent technologies. It focuses on the implementation of distributed intelligence in the manufacturing shop floor. The proposed approach provides the framework for components of a complex control system to work together as a whole rather than as a disjoint set. It encompasses both information architecture and integration methodologies. The paper introduces the basic concept of iShopFloor, a generic system architecture, and system components. It also describes the implementation of eXtensible Markup Language message services in iShopFloor and the application of intelligent agents to distributed manufacturing scheduling. A prototype environment is presented, and some implementation issues are discussed.     

Experimental characterization of hexatic smectic phases through electro-optic studies and dielectric relaxation spectroscopy

The electro-optic and complex dielectric behaviour of an antiferroelectric liquid crystal 4-(1-methylheptyloxycarbonyl)phenyl 4'-(n-butanoyloxyprop-1-oxy)biphenyl-4-carboxylate, having chiral SmC_A* and hexatic smectic phases, have been investigated. Complex dielectric permittivities were measured as a function of frequency, d.c. bias field and temperature. Spontaneous polarization was measured by the current reversal technique; tilt angle was measured under a polarizing microscope using a low frequency electric field. The electro-optic properties and dielectric behaviour of the material are compared with results obtained by DSC and polarizing optical microscopy. Dielectric relaxation processes in SmC_A* and hexatic smectic phases were determined. The dielectric strength at the SmC_A* to hexatic smectic phase transition is discussed in terms of coupling between the long range bond orientational order and smectic C director. It seems from the results of spontaneous polarization and dielectric relaxation spectroscopy that the material might possess an additional phase between the SmC_A* and hexatic smectic I* phases.