硬件锁中的无线USB

无线USB的前途似乎无与伦比——它能消除那些把大家桌面弄得像鼠窝一样小小的不怎么灵便的电缆。但事实上,只有需要大量的外设时无线USB设备才有优势,而且它必须非常微型而廉价,否则带来的麻烦远多于缠绕的电缆。因此,插在PC USB端口作为无线基站的硬件锁就必须有尽可能高的集成度。但一片芯片中要包含USB有线接口、控制器、无线基带和RF电路,技术上还无法实现。下面我们将看到一家供应商Wisalr的一种可量产参考设计,它是如何接近于解决这个问题的。     

Space-dependent color gamut mapping: a variational approach.

Gamut mapping deals with the need to adjust a color image to fit into the constrained color gamut of a given rendering medium. A typical use for this tool is the reproduction of a color image prior to its printing, such that it exploits best the given printer/medium color gamut, namely the colors the printer can produce on the given medium. Most of the classical gamut mapping methods involve a pixel-by-pixel mapping and ignore the spatial color configuration. Recently proposed spatial-dependent approaches for gamut mapping are either based on heuristic assumptions or involve a high computational cost. In this paper, we present a new variational approach for space-dependent gamut mapping. Our treatment starts with the presentation of a new measure for the problem, closely related to a recent measure proposed for Retinex. We also link our method to recent measures that attempt to couple spectral and spatial perceptual measures. It is shown that the gamut mapping problem leads to a quadratic programming formulation, guaranteed to have a unique solution if the gamut of the target device is convex. An efficient numerical solution is proposed with promising results.     

Photodiffraction in InGaAs/InGaAsP multiple quantum wells enclosed in a microcavity

We report new results on the diffraction properties of photoinduced gratings in InGaAs/InGaAsP MQW structures. The original feature of this device is that the QWs are enclosed in an asymmetric Fabry–Perot microcavity in order to increase the diffraction efficiency. We observe oscillations in the diffraction efficiency due to resonant effects in the microcavity. The experimental spectra are compared with theory. Diffraction efficiency at 1.55 μm attains a maximum value of 2.7% at a write beam fluence of 260 μ J cm⁻², and then decreases at higher fluences. We explain this phenomenon by an absorption saturation at high excitation.     

Octave-tunable miniature RF resonators

The development and testing of a miniaturized, high-Q, broadly tunable resonator is described. An exemplary device, with a center frequency that is continuously tunable from 1.2 to 2.6GHz, was tested in detail. Experimental results demonstrated a resonator Q of up to 380, and typical insertion loss of -1.9dB for a 25MHz 3-dB bandwidth. These resonators have been used to stabilize a broadly-tunable oscillator with phase noise of -132dBc/Hz at 100-kHz offset, with a center frequency tunable from 1.2-2.6GHz, and a tuning speed of 1GHz/ms.     

Mode beating in spot-size converter lasers

An anomalous modulation in the wavelength spectrum has been observed in lasers with spot-size converters. This intensity modulation is shown to be caused by beating between the fundamental lasing mode and radiation modes in the taper. This results in a periodic modulation in the net gain spectrum, which causes wavelength jumps between adjacent net gain maxima, and a drive current dependent spectral width that is expected to affect system performance. The amplitude of this spectral modulation is reduced significantly by either using an angled rear-facet which reflects the beating radiation modes away from the laser axis, or by using a nonlinear, adiabatic taper.     

Gigabit pulse position bistability in semiconductor lasers

The paper briefly reviews the major forms of optical bistability in active optical devices compatible for use in gigabit optical communication systems, and reports an entirely new optical bistability for the first time. Unlike previous devices, the two bistable states of the optical device are each a series of picosecond optical pulses at 1 GHz or greater repetition rates, and are distinguished by a half period temporal shift between their temporal positions in relation to a clock pulse. The bistable device is based on a gain switched semiconductor laser. Theoretical studies suggest 100-ps switching speeds might be achieved, and experimental results are reported indicating optically triggered switching times of 500 ps.     

Amphoteric trap modeling of multidielectric scaled SONOS nonvolatile memory structures

We have characterized multidielectric scaled SONOS nonvolatile memory structures with the quasi-static linear voltage ramp (LVR) technique and dynamic pulse measurements. We have formulated physically-based ERASE/WRITE and retention methods with deep level amphoteric traps which capture and emit carriers to the bands in the silicon nitride film. Amphoteric trap parameters are extracted by the LVR technique. ERASE/WRITE and retention amphoteric trap model simulations agree well with the experimental dynamic pulse measurements. Experimental scaled SONOS structures have been fabricated with tunnel oxide X_OT=20 Å, nitride X_N=30 Å and blocking oxide X_OB=55 Å and demonstrated a static flatband shift of 3.6 V with ±5 V programming voltages. These structures may be used as the nonvolatile memory element in high density VLSI circuits.