A new physical model of the light amplifying optical switch (LAGS)

A new physical model of determining the static I-V curve of the light amplifying optical switch (LAOS) is derived. The model is based on deriving the currents of the HPT and the feedback current of the LAOS. The feedback currents for optical and/or electrical feedback are determined by solving the continuity equation in the collector and the base of the HPT. A negative resistance region in the I-V curve is obtained and controlled by varying the feedback coefficient of the device and the Early effect coefficient. The main factors affecting the negative resistance region are the feedback coefficient, Early effect, the recombination currents in the emitter-base space-charge region, and the ratio of the collector to base doping. The switching voltage of the device is also calculated for different parameters     

Broadband gain-clamped linear quantum dash optical amplifiers

The linear optical gain of gain-clamped quantum dash semiconductor optical amplifiers (GCSOAs) has been investigated using the rate equation model. The gain spectrum of GCSOA for different wavelength detuning and different doping has been studied. Our analysis shows that the linear gain can be increased as the laser wavelength is detuned to high wavelength where the peak of the optical gain, which is found at wavelengths below the ground state wavelength, is shifted to lower wavelength as the laser wavelength is increased. We find that doping the dashes by either N-type or P-type enhances the linear optical gain and shifts the gain peak to lower wavelength. Moreover, we found that GCSOA with lightly N-type doping demonstrates large separation between the laser and the amplifier wavelength. Also we find that small inhomogeneous line broadening enhances the linear gain peak, shifts the gain peak to wavelength lower than the GS wavelength and widens the gain spectrum.     

Novel Closed-Form Model for Multiple-State Quantum-Dot Semiconductor Optical Amplifiers

Novel closed-form model for multiple-state quantum-dot semiconductor optical amplifiers (QD-SOAs) is derived. The model takes into account the effect of the ground state, excited state and the wetting layer. The model is simple, accurate and exhibits negligible computational time compared with numerical simulation. In addition, the derived model is valid for arbitrary applied current and input photon density and is interesting for device design and optimization. Analytical expressions for the optical gain, effective saturation density, maximum output density and the transparency current are also derived. Our model revealed that the effective saturation density of QD-SOAs strongly depends on the photon density and the applied current.     

Effect of inhomogeneous line broadening on gain and differential gain of quantum dot lasers

Detailed theoretical analysis of the size fluctuation in InAs-GaAs quantum dot (QD) lasers is presented. Analytical expressions for the inhomogeneous line broadening and the optical gain are derived for a Gaussian size fluctuation distribution. The effect of size fluctuations on the QD carrier density, modal gain, and differential gain is studied. Red shifts in the gain peak is observed when size fluctuations increases. The energy detuning between the gain peak and the differential gain peak for a pyramidal quantum dot system having an average base length of 130 /spl Aring/ and standard deviation of 7 /spl Aring/ is about 12 meV.     

Theory of four-wave mixing wavelength conversion in quantum dot semiconductor optical amplifiers

Detailed theoretical analysis of four-wave mixing (FWM) wavelength conversion in quantum dot semiconductor optical amplifier (QD-SOA) is presented. The model takes into account the effect of the multidiscrete QD energy levels and the wetting layer. Good agreement between calculated and experimental data is obtained. Because of the discreteness of the energy levels, QD-SOAs demonstrate high FWM conversion efficiencies at high detuning frequency. Our calculations show that carrier escape from the ground state significantly affects the performance of the amplifier.     

Optical gain and saturation characteristics of quantum-dot semiconductor optical amplifiers

Detailed theoretical analysis of the gain characteristics of quantum-dot semiconductor optical amplifiers (QD-SOA) is presented. An analytical expression for the optical gain is derived from the quantum dot and wetting layer rate equations. Due to the better confinement of carriers in the quantum dots, our calculation shows that large unsaturated optical gain can be obtained at low operating current. Also, we found that the output saturation intensity of QD-SOA is higher than the output saturation intensity of bulk-SOA. This fact lends itself to the design of efficient low-power SOAs.     

Electroabsorption and electrooptic effect in SiGe-Si quantum wells:realization of low-voltage optical modulators

We have calculated the behavior of the band-to-band absorption coefficient in square, coupled, and graded bandgap Si_0.6Ge _0.4-Si quantum wells as a function of the transverse electric field. It is seen that due to the weak confinement of the electrons (ΔE_c⩽20 meV) the absorption of photons with energy equal to the interband transition energy can be reduced at very small values of the transverse electric field. This phenomenon lends itself to the design of efficient amplitude modulators. In addition, the resulting change in the refractive index is also large and the corresponding linear electrooptic coefficient is calculated to be as large as 1.9×10^-10 m/V in square wells. This effect could prove to be the basis for the realization of efficient Si-based electrooptic modulators. Device designs are discussed     

Analytical Model for Cross-Gain Modulation and Crosstalk in Quantum-Well Semiconductor Optical Amplifiers

An analytical model of the dynamic characteristics of a quantum-well (QW) semiconductor optical amplifier (SOA) is developed. Closed-form expressions for the optical gain and cross-gain modulation (XGM) for arbitrary input pulses are derived. The model takes into account the carrier capture and escape transitions between the QW and the continuum states. This model is also used to derive a closed-from expression for interchannel XGM crosstalk in multichannel SOA systems. The model/analysis provides insight into the effect of the SOA parameters on the performance of a wavelength-division multiplexed system. We found that crosstalk in a multichannel SOA system can be reduced by reducing the escape lifetime.     

Contrast ratio and hysteresis width of optical bistability in quantum-dot vertical-cavity semiconductor optical amplifiers integrated with MEMS membrane

The characteristics of optical bistability in quantum dot vertical cavity semiconductor optical amplifier integrated with MEMS membrane have been investigated, and a closed-form model is derived taking into account the effect of the quantum dot discrete states and the membrane deflection and reflectivity. We show that small membrane deflection significantly adjusts the resonant wavelength, the contrast ratios and the hysteresis width. The shape of the input–output characteristics of the device can be adjusted to display clockwise, butterfly and counterclockwise hysteresis loops depending on the membrane deflection and the initial wavelength detuning. Our analysis reveals that the contrast ratios of the upper and lower bistable levels are totally different. Also, it has been shown that the characteristics of the bistability are strong function of the active layer linewidth enhancement factor and the membrane reflectivity.     

Electrically injected single-defect photonic bandgapsurface-emitting laser at room temperature

An electrically injected defect-mode photonic bandgap microcavity surface-emitting laser at room temperature is demonstrated for the first time. 931 nm lasing is observed under pulsed excitation conditions. With a threshold current of 300 μA. Near- and far-field modal characteristics of the emission confirm lasing from the defect-related microcavity in the photonic bandgap crystal