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1.
Nagle H.T. Fritzemeier R.R. Van Well J.E. McNamer M.G. 《Industrial Electronics, IEEE Transactions on》1989,36(2):151-163
As the level of microprocessor complexity increases to several hundred thousand transistors for a single-chip machine, it is becoming very difficult to test commercially available designs to the level of fault coverage desired by some customers. In order to achieve near 100-percent coverage of single stuck-at faults, future microprocessors must be designed with special testing features (designed for testability). The authors describe the testing problem for microprocessors, including the various methods of generating test sets and their application by the user. A survey of the testability features of some of today's commercially available microprocessors is presented. Suggestions for testability features for future-generation microprocessors are also discussed 相似文献
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Metal-insulator-metal, MIM, capacitors have been fabricated using plasma deposited silicon nitride, SiNx, films deposited under varying deposition conditions. The electrical properties of the MIM capacitors and the corresponding
physical properties of the SiNx films have been determined. The breakdown field strength of the films, which varied between 0.4–3.0 MVcm−1, has been related to the amount of hydrogen incorporated in the SiNx layers during deposition. Frenkel-Poole conduction through the silicon nitride has been observed at room temperature and
this conduction mechanism is shown to be predominant and independent of the breakdown field strength, for the films investigated. 相似文献
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Physics of Atomic Nuclei - A new entropic gravity inspired derivation of general relativity from thermodynamics is presented. This generalizes the “Thermodynamics of Spacetime” approach... 相似文献
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P. D. Berger C. Bru Y. Baltagi T. Benyattou M. Berenguer G. Guillot X. Marcadet J. Nagle 《Microelectronics Journal》1995,26(8):827-833
Photoreflectance (PR) measurements were performed on specific structures grown by molecular-beam epitaxy on different substrate orientations: 111B, 111B 2° off, 111A and 100. A strained In0.2Ga0.8As quantum well was grown in the space charge layer of an undoped GaAs layer. On a polar substrate orientation 111, the strain-induced piezoelectric field in the quantum well modifies the field in the space charge layer. PR spectra recorded in such structures exhibit Franz Keldysh oscillations from which we can measure the internal electric field. The piezoelectric field is then deduced from a comparison between two structures differing only by the presence of the strained quantum well. Experimental values ranged between 110 kV/cm and 150 kV/cm, and were used to determine experimentally the piezoelectric constant e14 in In0.2Ga0.8As. 相似文献
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Bouregba R. Vanbesien O. Mounaix P. Lippens D. Palmateer L. Pernot J.C. Beaudin G. Encrenaz P. Bockenhoff E. Nagle J. Bois P. Chevoir F. Vinter B. 《Microwave Theory and Techniques》1993,41(11):2025-2027
High quality resonant tunneling diodes have been fabricated and tested as sources for millimeter and submillimeter wavelengths. The devices have shown excellent I-V characteristics with peak-to-valley current ratios as high as 6:1 and current densities in the range of 50-150 kA/cm2 at 300 K. Used as local oscillators, the diodes are capable of state of the art output power delivered by AlGaAs-based tunneling devices. As harmonic multipliers, a frequency of 320 GHz has been achieved by quintupling the fundamental oscillation of a klystron source 相似文献