Photolithographic packaging with selectively occupied repeatedtransfer (PL-Pack with SORT) for scalable film optical linkmultichip-module (S-FOLM)

"Photolithographic packaging (PL-pack) with selectively occupied repeated transfer (SORT)" is proposed for optoelectronic microsystem integration. PL-pack with SORT integrates different types of thin-film device pieces into one substrate with desired configurations using an all-photolithographic process. A process design example is presented for a scalable film optical link multichip-module (S-FOLM). A preliminary estimation reveals that PL-Pack with SORT will achieve III-V epitaxial material saving of <1/100 and module cost reduction of <1/10, compared with flip-chip-bonding-based packaging. The result indicates that the process will save on cost and resources simultaneously. A critical issue is how to simplify the procedure for distributing thin-film device pieces onto a substrate. SORT is found to reduce the distribution step count typically by factor of <1/10-1/10000 compared with the conventional one-by-one method. PL-pack with SORT will be extended to the 3R process (reduce, reuse, recycle), which is generally applied to a variety of device/module fabrications     

Mechanism of charge–transfer polymerization. II. Propagation mechanism of the polymerization of N-vinylcarbazole with organic electron acceptors

Copolymerizations of N-vinylcarbazole with both isobutyl vinyl ether and N-vinyl-pyrrolidone initiated by some organic electron acceptors have been investigated for the purpose of elucidating the propagation mechanism in the charge-transfer polymerization. Copolymerizations of the same system catalyzed by authentic cationic catalysts have also been made for comparison. The results indicate that the propagation mechanism of the charge-transfer polymerization studied is catio ie.     

Preparations of regioselectively methylated cellulose acetates and their 1H and 13C NMR spectroscopic analyses

Seven possible regioselectively methylated cellulose acetates (RS‐MCAs)—2,3,6‐tri‐O‐methyl cellulose acetate, 3,6‐di‐O‐methyl cellulose acetate, 2,6‐di‐O‐methyl cellulose acetate, 2,3‐di‐O‐methyl cellulose acetate, 6‐O‐methyl cellulose acetate, 3‐O‐methyl cellulose acetate, and 2‐O‐methyl cellulose acetate—were prepared for the first time from chemically synthesized cellulose derivatives obtained by cationic ring‐opening polymerization and then were analyzed by ¹H and ¹³C NMR spectroscopy. The chemical shifts of ring protons and carbons were influenced by substituent groups (methyl or acetyl) and clearly reflected the pattern of substituent distribution in anhydroglucose units. These data may conveniently be used for the determination of the substituent distribution of methyl cellulose. The synthesized RS‐MCAs also may be used for the elucidation of the structure–property relationship. © 2002 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 40: 4167–4179, 2002     

PH-Bestimmungsmethoden

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An AlxGa1-xSb avalanche photodiode with again bandwidth product of 90 GHz

An Al_xGa_1-xSb avalanche photodiode (APD) with an Al composition of 0.05 has been fabricated and tested. The measured gain-bandwidth (GB) product of the highly doped diode is 90 GHz. Such a large GB product has never been previously achieved by any APD materials sensitive in the long-wavelength region. This suggests the advantage of the Al_xGa_1-xSb material system for very high-speed operation     

Optimum design of δ-doped InGaAs avalanche photodiode byusing quasi-ionization rates

An avalanche photodiode (APD) designed by using quasi-ionization rates in InP and InGaAs is described. The structure has a δ-doped layer in an InP window layer. The heterointerface electric field is investigated and determined to prevent the tunneling current and carrier multiplication in InGaAs. The gain bandwidth (GB) product of the δ-doped APD is analyzed by R.B. Emmons's (1967) p-i-n electric field method. The highest GB product is 160 GHz     

High-speed InP/InGaAs avalanche photodiodes with a compositionallygraded quaternary layer

InP/InGaAs avalanche photodiodes (APDs) with a compositionally graded quaternary layer at the heterointerface between the InGaAs absorption and InP multiplication regions were fabricated and tested. A comparison of samples with the graded layer and with conventional three quaternary layers showed that the frequency characteristics for samples with the graded layer did not deteriorate at a low bias voltage even below -100°C, unlike APDs with three InGaAsP layers. Thus, no hole trapping occurred at the InP/InGaAs heterointerface with the graded layer. A sample with the graded layer showed a cutoff frequency exceeding 9 GHz at a low multiplication factor of 2. The authors found InP/InGaAs APDs with the compositionally graded quaternary layer to be useful over a wide temperature range     

Mechanismus der Charge-transfer-Polymerisation. 12. Mitt. Der Einfluß der Wellenlänge des einfallenden Lichtes auf die kationische Photopolymerisation von N-Vinylcarbazol mit Bromund Chloranil in Benzol

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Small-active-area germanium avalanche photodiode for single-mode fibre at 1.3 ?m wavelength

A germanium avalanche photodiode of 30 ?m active area diameter has been fabricated and tested. The multiplied dark current is as low as 5 nA at room temperature. A module using this diode and a spherical lens has been assembled and coupled with a single-mode fibre of core diameter 10 ?m. The quantum efficiency of the module is 90% at 1.3 ?m. The sensitivity is measured at 45 Mbit/s and at 1.3 ?m. Minimum detectable powers obtained for 10?11 error rate are ?51.9 dBm and ?50.7 dBm at 25°C and 50°C, respectively.