When does the subadditivity theorem for multiplier ideals hold?

Demailly, Ein and Lazarsfeld proved the subadditivity theorem for multiplier ideals on nonsingular varieties, which states the multiplier ideal of the product of ideals is contained in the product of the individual multiplier ideals. We prove that, in the two-dimensional case, the subadditivity theorem holds on log terminal singularities. However, in the higher dimensional case, we have several counterexamples. We consider the subadditivity theorem for monomial ideals on toric rings and construct a counterexample on a three-dimensional toric ring.

     

Anomalies of ultrasonic velocity in high-Tc ceramics YBa2Cu3Oy and BiSrCaCu2Oy

Ultrasonic longitudinal velocity and adsorption have been measured in ceramic superconductors YBa₂Cu₃O_y with various porosity and also in BiSrCaCu₂O_y. A velocity drop of about 400 ppm was found at T_c only in the measurements on cooling. The magnitude of the velocity drop is anomalously large compared with the value expected from the thermodynamics. A hysteresis of velocity with respect to temperature was observed in all the samples studied. It is suggested that some structural change at pore size level is responsible for this phenomenon.     

[110]-surface strained-SOI CMOS devices

We have newly developed [110]-surface strained-silicon-on-insulator (SOI) n- and p-MOSFETs on [110]-surface relaxed-SiGe-on-insulator substrates with the Ge content of 25%, fabricated by applying the Ge condensation technique to SiGe layers grown on [110]-surface SOI wafers. We have demonstrated that the electron and the hole mobility enhancement of [110]-surface strained-SOI devices amounts to 23% and 50%, respectively, against the mobilities of [110]-surface unstrained MOSFETs. As a result, the electron and the hole mobility ratios of [110]-surface strained-SOI MOSFETs to the universal mobility of (100)-surface bulk-MOSFETs increase up to 81% and 203%, respectively. Therefore, the current drive imbalance between n- and p-MOS can be reduced. Moreover, both the electron and the hole mobilities of the [110]-surface strained-SOIs strongly depend on the drain current flow direction, which is qualitatively explained by the anisotropic effective mass characteristics of the carriers on a [110]-surface Si. As a result, the [110]-surface strained-SOI technology with optimization of the current flow directions of n- and p-MOS is promising for realizing higher speed scaled CMOS.     

Magnetism in electron-doped copper oxides

We report muon spin relaxation/rotation measurements on sintered powder samples of Nd_2−x Ce _x CuO_4−y and a large single crystal of Nd₂CuO_4−y . We find an electronic phase diagram which is quite similar to that of hole-doped superconductors such as La_2−x Sr _x CuO_4−y , although the doping of electrons into the system is less efficient in destroying the static moments on the copper spins. Static magnetic order in Nd₂CuO_4−y appears below about 250 K, and two spin reorientations are seen atT=75 K andT=35 K. Measurements of the magnetic field penetration depth have been unsuccessful due to the rare-earth paramagnetism of these materials.     

Throughput Analysis for Persistent CSMA Systems

The channel throughput for a finite number of packet broadcasting users is analyzed for random access protocols, including slotted persistent carrier sense multiple access (CSMA) with and without collision detection and unslotted persistent CSMA with and without collision detection. We consider bothp- and 1-persistent CSMA. Our results can be extended to infinite population cases (by taking the proper limit), where they agree with the known throughput expressions when available.     

Influences of buried-oxide interface on inversion-layer mobility inultra-thin SOI MOSFETs

This paper reports on a study of the inversion-layer mobility in n-channel Si MOSFETs fabricated on a silicon-on-insulator (SOI) substrate. In order to make clear the influences of the buried-oxide interface on the inversion-layer mobility in ultra-thin film SOI transistors, SOI wafers of different quality at the buried-oxide interface were prepared, and the mobility behaviors were compared quantitatively. The transistors with a relatively thick SOI film exhibited the universal relationship between the effective mobility and the effective normal field, regardless of the buried-oxide interface quality. It was found, however, that Coulomb scattering due to charged centers at the backside interface between SOI films and buried oxides has great influence on the effective mobility in the thin SOI thickness region, depending on the buried-oxide interface quality. This means that Coulomb scattering due to charged centers at the buried-oxide interface can degrade the mobility with decreasing SOI thickness, unless the SOI wafer quality at the buried-oxide interface is controlled carefully     

Comparative studies of the colony-promoting activity of porcine kidney extract with several interleukins and colony-stimulating factors.

Porcine kidney extracts (PKE) possess colony-promoting activity (CPA) which stimulates primitive hematopoietic cells in the presence of granulocyte/macrophage colony-stimulating factor (GM-CSF), but PKE itself does not stimulate colony formation on murine bone marrow cells. We have compared the CPA of PKE with that of recombinant cytokines or CSFs such as interleukin-1 alpha (IL-1 alpha), IL-3, IL-6, granulocyte colony-stimulating factor (G-CSF), GM-CSF and macrophage colony-stimulating factor (CSF-1). All of these factors were less potent than PKE. Furthermore, the combinations of IL-1 alpha or PKE with G-CSF, GM-CSF, IL-3 or IL-6 were examined in the presence of one of these factors such as CSF. It is found that PKE acts synergistically with G-CSF, GM-CSF, IL-3 and IL-6, showing enhancement ratios of 10, 2.5, 4.2 and 30, respectively. The combination of IL-1 alpha resulted in poor colony formation in contrast with those of PKE, except for CSF-1. These results suggest that the CPA of the factor(s) in PKE differ from the cytokines and CSFs tested in this study, and is significantly affected by various types of CSF.