热处理对Ti-Mo-V-Nb-Al合金微观结构的影响

形状记忆合金由于其优良的超弹性和形状记忆效应而在医学上有着广泛的应用，其中由于NiTi形状记忆合金相较其它形状记忆合金具有更好的超弹性和生物相容性而得到了广泛的应用。但由于镍元素的毒性，使得开发一种生物相容性更好、无镍且具有良好力学性能的形状记忆合金成为必需。Ti-Mo-V-Nb-Al五元合金就是为此而开发的一种新型形状记忆合金。本研究用X射线衍射（XRD）、透射电子显微镜（TEM）和高分辨电子显微镜（HREM）研究了不同热处理条件对Ti-Mo-V-Nb-Al形状记忆合金微观结构的影响。     

Characterisation of orientation noise for EBSP technique

ＩｎｔｒｏｄｕｃｔｉｏｎＥｌｅｃｔｒｏｎｂａｃｋ ｓｃａｔｔｅｒｅｄｐａｔｔｅｒｎ (ＥＢＳＰ)ａｎａｌｙｓｉｓｉｎｔｈｅｓｃａｎｎｉｎｇｅｌｅｃｔｒｏｎｍｉｃｒｏｓｃｏｐｅａｓａｔｏｏｌｆｏｒｉｎｖｅｓｔｉｇａｔｉｎｇｍｉｃｒｏｓｔｒｕｃｔｕｒｅｈａｓｂｅｅｎｗｅｌｌｅｓｔａｂｌｉｓｈｅｄ .Ｔｈｉｓｔｅｃｈｎｉｑｕｅｈａｓｍａｎｙａｄｖａｎｔａｇｅｓｏｖｅｒｔｒａｎｓｍｉｓｓｉｏｎｅｌｅｃｔｒｏｎｍｉｃｒｏｓｃｏｐｙ .Ａｄｒａｗｂａｃｋｏｆｔｈｉｓｔｅｃｈｎｉｑｕｅｉｓｔｈｅａｎｇｕｌａｒｒｅｓｏ…     

Investigation of recystallization behavior of IF—steel using EBSD technique

The orientation nucleation behavior of γ－fiber of IF-steel was studied using high resolution electron back scattering diffraction (EBSD)technique during annealing.The γ-Fiber nucleation occurs in the deformation bands of γ-fiber and other orientationdeformation bands produce scattering orientation grains.     

τ-CHEBYSHEV AND τ-COCHEBYSHEV SUBPSACES OF BANACH SPACES

The concepts of quasi-Chebyshev and weakly-Chebyshev and σ-Chebyshev were defined [3 - 7], andas a counterpart to best approximation in normed linear spaces, best coapprozimation was introduced by Franchetti and Furi^[1]. In this research, we shall define τ-Chebyshev subspaces and τ-cochebyshev subspaces of a Banach space, in which the property τ is compact or weakly-compact, respectively. A set of necessary and sufficient theorems under which a subspace is τ-Chebyshev is defined.     

填充式方钴矿化合物CeOs4Sb12近藤相互作用的非弹性中子散射研究

CeOs4Sb12晶体中由于导电电子与Ce3+ 4f1电子之间存在c-f杂化作用导致费米面附近存在能量间隙.这种c-f近藤相互作用和能量间隙是理解CeOs4Sb12物理性质,如近藤绝缘体行为、Ce3+磁矩在低温下猝灭以及重费米性等电、磁性质的关键.当用LAM-D中子谱仪对粉末CeOs4Sb12进行测量时,可以得到不同温度下CeOs4Sb12的非弹性中子散射谱.结果表明CeOs4Sb12中存在近藤相互作用,其作用强度为3.1 meV,证实了CeOs4Sb12为近藤绝缘体.中子测量得出CeOs4Sb12德拜温度为317 K.     

Measurement of the Seperation between Atoms beyond Diffraction Limit

We propose a scheme to obtain the distance of two identical atoms placed inside the standing wave field by monitoring the collective resonance fluorescence spectrum emitted by the two particles. We find three different parameter ranges, depending on the distance of the atoms as compared to the transition wavelength. For large interparticle distances, dipole-dipole coupling is negligible, and the main system evolution arises from the interaction with the standing wave field. In the small-distance limit, the dynamics is dominated by the dipole-dipole interaction. Finally, in the intermediate region, a rich interplay of the various couplings arises, which however is lifted for strong driving laser fields. The present measurement procedure allows us to distinguish the three cases. In each of the cases, we show how to determine the distance of the two particles and their respective positions relative to the nodes of the standing wave field with fractional-wavelength precision.     

New Explicit Solitary Wave Solutions and Periodic Wave Solutions for the Generalized Coupled Hirota－Satsuma KdV system

In this paper,we study the generalized coupled Hirota-Satsuma KdV system by using the new generalized transformation in homogeneous balance method.As a result,many explicit exact solutions,which contain new solitary wave solutions,periodic wave solutions,and the combined formal solitary wave solutions,and periodic wave solutions ,are obtained.     

实验研究二维圆柱后尾流中涡脱落的有序和混沌现象

本文给出了在Re=50—400范围内二维圆柱后涡脱落的有序和混沌现象的一些初步实验结果。涡脱落由有序到混沌的转捩发生在Re=184.6—193.5之间,但是它不是通过准周期途径。在涡脱落频率与Re数的关系曲线上有两个间断。在Re=70处的间断可能对应于倾斜涡脱落模式的变化,在Re≈193.5处的第二间断对应于由有序到混沌状态的转捩。     

填充式方钴矿化合物CeOs4Sb12近藤相互作用的非弹性中子散射研究

CeOs₄Sb₁₂晶体中由于导电电子与Ce³⁺ 4f¹电子之间存在c-f杂化作用导致费米面附近存在能量间隙.这种c-f近藤相互作用和能量间隙是理解CeOs₄Sb₁₂物理性质，如近藤绝缘体行为、Ce³⁺磁矩在低温下猝灭以及重费米性等电、磁性质的关键.当用LAM-D中子谱仪对粉末CeOs₄Sb₁₂进行测量时，可以得到不同温度下CeOs₄Sb₁₂的非弹性中子散射谱.结果表明CeOs₄Sb₁₂中存在近藤相互作用，其作用强度为3.1 meV，证实了CeOs₄Sb₁₂为近藤绝缘体.中子测量得出CeOs₄Sb₁₂德拜温度为317 K. 关键词： 非弹性中子散射 填充式方钴矿 近藤绝缘体