Development of Stretch Solder Interconnections for Wafer Level Packaging

A wafer level packaging technique has been developed with an inherent advantage of good solder joint co-planarity suitable for wafer level testing. A suitable weak metallization scheme has also been established for the detachment process. During the fabrication process, the compliancy of the solder joint is enhanced through stretching to achieve a small shape factor. Thermal cycling reliability of these hourglass-shaped, stretch solder interconnections has been found to be considerably better than that of the conventional spherical-shaped solder bumps.     

Disaster recovery planning in an automated manufacturingenvironment

Disasters may strike at any moment in any location. When they do, no distinction is made about the type of firm that is being affected, whether it is a bank or a manufacturing plant. Most firms do not plan for possible disasters, and those that do have typically focused on computer and data contingency planning. In this paper, the focus is shifted to incorporate disaster recovery planning for manufacturing enterprises, especially those that are automated. Automated manufacturing enterprises have characteristics that put them at an increased risk to disasters. The methodological framework proposed in this paper will aid manufacturing organizations and their managers in reducing the risks associated with unanticipated disasters. The framework is termed the “Manufacturing Operations Recovery and Resumption” model. Recommended activities and tools for effective management of this methodology are identified     

Layered Video and Differentiated Coding for Adaptive QoS in Mixed Wired-Satellite Networks

Mobile networks are becoming nothing but a way to allow ubiquitous access to multimedia services. To allow efficient use of resources, new systems provide flexible bandwidth and different error protection techniques to match channel behavior. As the backbone network is increasingly becoming based on packet techniques and in particular on IP and related transport protocols, end to end service quality must be analyzed considering both the fixed and the mobile part. Source scalability may help in coping with a mixed and heterogeneous environment. In this work we present some results of a transmission chain comprising a scalable MPEG-2 coder, an IP network and a radio access exploiting the availability of satellites. It is shown that for a given target rate, differentiated coding can be exploited to achieve decodability and good quality at a channel SNR much lower that single layer streams. This revised version was published online in July 2006 with corrections to the Cover Date.     

A high-current and high-temperature 6H-SiC thyristor

A 6H-SiC thyristor has been fabricated and characterized. A forward breakover voltage close to 100 V and a pulse switched current density of 5200 A/cm² have been demonstrated. The thyristor is shown to operate under pulse gate triggering for turn-on and turn-off, with a rise time of 43 ns and a fall time of less than 100 ns. The forward breakover voltage is found to decrease by only 4% when the operating temperature is increased from room temperature to 300°C. It is found that anode ohmic contact resistance dominates the device forward drop at high current densities     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

Harmonic and intermodulation distortion modeling in IM-DD multi-band radio over fiber links exploiting injection locked lasers

A comprehensive numerical tool has been developed for the evaluation of the performances of Radio over Fiber (RoF) links intended for wireless signal distribution.At the transmitter end an appropriate set of rate equations allows to model the optical source as a solitary laser or as an appropriately injection locked laser. The optical channel is modeled putting into account the combined effect of fiber dispersion, laser source non ideal performances (e.g. non-linear effects, frequency chirp), and quadratic detection of the receiving photodiode. The simulation model developed can be a useful tool at the design stage allowing a preliminary evaluation of the characteristics of real RoF links.     

<Emphasis Type="Italic">Comment on</Emphasis>¶Low temperature specific heat of blue bronze K <Emphasis Type="Bold">0.30</Emphasis>MoO <Emphasis Type="Bold">3</Emphasis>, by J. Odin,J.C. Lasjaunias,K. Biljaković, K. Hasselbach,and P. Monceau

Eur. Phys. J. B 24, 315 (2001) Here we comment on a recently published paper on the presence of a phason contribution in the low temperature heat capacity data of the charge-density-wave compounds K_0.3MoO₃ and (TaSe₄)₂I. We have shown that the anomaly in the C _P / T ³ data reported by Odin et al. is straightforwardly interpreted in terms of low energy phonon modes resulting from the peculiar topology of these compounds. Received 21 February 2002 Published online 19 July 2002     

A Relaxation Scheme for Solving the Boltzmann Equation Based on the Chapman-Enskog Expansion

Abstract In [16] a visco-elastic relaxation system, called the relaxed Burnett system, was proposed by Jinand Slemrod as a moment approximation to the Boltzmann equation. The relaxed Burnett system is weaklyparabolic, has a linearly hyperbolic convection part, and is endowed with a generalized eotropy inequality. Itagrees with the solution of the Boltzmann equation up to the Burnett order via the Chapman-Enskog expansion. We develop a one-dimensional non-oscillatory numerical scheme based on the relaxed Burnett system forthe Boltzmann equation. We compare numerical results for stationary shocks based on this relaxation scheme,and those obtained by the DSMC (Direct Simulation Monte Carlo), by the Navier-Stokes equations and bythe extended thermodynamics with thirteen moments (the Grad equations). Our numerical experiments showthat the relaxed Burnett gives more accurate approximations to the shock profiles of the Boltzmann equationobtained by the DSMC, for a range of Mach numbers for hypersonic flows, th     

Fabrication and characteristics of tapes and test magnets made from Ag-Clad Bi-2223 superconductors

Pb_0.4Bi_1.8Sr₂Ca_2.2Cu₃O_x (Bi-2223) precursor powder was prepared by a solid-state reaction of carbonates and oxides of lead, bismuth, strontium, calcium, and copper, and the powder was then used to fabricate silver-clad tapes by the powder-in-tube technique. Transport critical current density (J_c) values>4×10⁴ A/cm² at 77K and 2×10⁵ A/cm² at 4.2 and 27K have been achieved in short tape samples. Long lengths of tape were tested by winding them into pancake coils. Recently, we fabricated a test magnet by stacking ten pancake coils, each containing three 16m lengths of rolled tape, and tested it at 4.2, 27 and 77K. A maximum generated field of 2.6 T was measured in zero applied field at 4.2K and the test magnet generated significant self-field in background fields up to 20 T. The results are discussed in this paper.