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1.
Jigneshkumar P. Patel Zou Guo Xiang Shaw Ling Hsu Andrew B. Schoch Sena Ada Carleen Dean Matsumoto 《Journal of Polymer Science.Polymer Physics》2015,53(21):1519-1526
A uniform dispersion of reactants is necessary to achieve a complete reaction involving multicomponents. In this study, we have examined the role of plasticizer in the reaction of two seemingly unlikely reactants: a highly crystalline hexamethylenetetramine (HMTA) and a strongly hydrogen bonded phenol formaldehyde resin. By combining information from NMR, infrared spectroscopy and differential scanning calorimetry, we were able to determine the role of specific intermolecular interactions necessary for the plasticizer to dissolve the highly crystalline HMTA and to plasticize the phenol formaldehyde resin in this crosslinking reaction. The presence of the plasticizer increased the segmental mobility, disrupted the hydrogen bonded matrix, and freed the hydroxyl units, which further increased the solubility of the HMTA. Both the endothermic and exothermic transitions are accounted for in the calorimetric data obtained. For the first time, it is possible to obtain the effective molar ratio of each component needed to complete the crosslinking reaction efficiently. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2015 , 53, 1519–1526 相似文献
2.
Ling-Yang Hsu Qiumin Liang Zhiheng Wang Hsin-Hung Kuo Wun-Shan Tai Shi-Jian Su Xiuwen Zhou Yi Yuan Yun Chi 《Chemistry (Weinheim an der Bergstrasse, Germany)》2019,25(67):15375-15386
Iridium complexes bearing chelating cyclometalates are popular choices as dopant emitters in the fabrication of organic light-emitting diodes (OLEDs). In this contribution, we report a series of blue-emitting, bis-tridentate IrIII complexes bearing chelates with two fused five-six-membered metallacycles, which are in sharp contrast to the traditional designs of tridentate chelates that form the alternative, fused five-five metallacycles. Five IrIII complexes, Px-21 – 23 , Cz-4 , and Cz-5 , have been synthesized that contain a coordinated dicarbene pincer chelate incorporating a methylene spacer and a dianionic chromophoric chelate possessing either a phenoxy or carbazolyl appendage to tune the coordination arrangement. All these tridentate chelates afford peripheral ligand–metal–ligand bite angles of 166–170°, which are larger than the typical bite angle of 153–155° observed for their five-five-coordinated tridentate counterparts, thereby leading to reduced geometrical distortion in the octahedral frameworks. Photophysical measurements and TD-DFT studies verified the inherent transition characteristics that give rise to high emission efficiency, and photodegradation experiments confirmed the improved stability in comparison with the benchmark fac-[Ir(ppy)3] in degassed toluene at room temperature. Phosphorescent OLED devices were also fabricated, among which the carbazolyl-functionalized emitter Cz-5 exhibited the best performance among all the studied bis-tridentate phosphors, showing a maximum external quantum efficiency (EQEmax) of 18.7 % and CIEx,y coordinates of (0.145, 0.218), with a slightly reduced EQE of 13.7 % at 100 cd m−2 due to efficiency roll-off. 相似文献
3.
Latchup-free ESD protection design with complementary substrate-triggered SCR devices 总被引:2,自引:0,他引:2
Ming-Dou Ker Kuo-Chun Hsu 《Solid-State Circuits, IEEE Journal of》2003,38(8):1380-1392
The turn-on mechanism of silicon-controlled rectifier (SCR) devices is essentially a current triggering event. While a current is applied to the base or substrate of an SCR device, it can be quickly triggered on into its latching state. In this paper, latchup-free electrostatic discharge (ESD) protection circuits, which are combined with the substrate-triggered technique and an SCR device, are proposed. A complementary circuit style with the substrate-triggered SCR device is designed to discharge both the pad-to-V/sub SS/ and pad-to-V/sub DD/ ESD stresses. The novel complementary substrate-triggered SCR devices have the advantages of controllable switching voltage, adjustable holding voltage, faster turn-on speed, and compatible to general CMOS process without extra process modification such as the silicide-blocking mask and ESD implantation. The total holding voltage of the substrate-triggered SCR device can be linearly increased by adding the stacked diode string to avoid the transient-induced latchup issue in the ESD protection circuits. The on-chip ESD protection circuits designed with the proposed complementary substrate-triggered SCR devices and stacked diode string for the input/output pad and power pad have been successfully verified in a 0.25-/spl mu/m salicided CMOS process with the human body model (machine model) ESD level of /spl sim/7.25 kV (500 V) in a small layout area. 相似文献
4.
The object of this note is to prove the followingTheorem Let{a_n}and{b_n}be sequences of real numbers such that0<∑∑a_n~2<+∞and0<∑b_n~2<+∞.Then we have the inequalitysum from m=1 to∞sum from n=1 to∞a_mb_n/m+n<{sum from n=1 to∞(π-θ/n~(1/2)a_n~2}~1/2{sum from n=1 to∞(π-θ/n~(1/2)b_n~2}~1/2 (1)whereθ=3/2~(1/2)-1=1.121320343. 相似文献
5.
A Hammerstein-based dynamic model for hysteresis phenomenon 总被引:2,自引:0,他引:2
The Hammerstein configuration, which includes a nonlinear static block followed by a linear dynamic block, is applied to model the rate-dependent and temperature-dependent hysteresis phenomenon. The nonlinear static block is realized by a modified Preisach model, which includes both the irreversible and reversible components of magnetization. The linear dynamic block is realized by a low-pass filter, which takes into account the rate-dependent effects of hysteresis. Temperature dependencies are incorporated into the model by fitting the model parameters as piecewise-linear functions of temperature. A procedure is described for the extraction of a single set of model parameters over the frequency, amplitude, and temperature ranges of interest. The theory is verified experimentally 相似文献
6.
Barium ferrite particulates prepared by a salt-melt method 总被引:1,自引:0,他引:1
Tsung-Shune Chin S.L. Hsu M.C. Deng 《Journal of magnetism and magnetic materials》1993,120(1-3):64-68
Barium ferrite particulates have been prepared by coprecipitation and calcination in a flux of NaCl-KCl. It was found that a flux containing more than 30 wt% KCl tends to seriously deteriorate the magnetic properties of resultant perticulates. The flux with 10 wt% KCl or less showed promising results. A Ba(CoZr)0.75Fe10.5O19 particulate showed the best properties, i.e., a saturation magnetization of 68.5, a squareness ratio of 0.49, and a coercivity of 1280 Oe, when calcined in NaCl at 900°C for 4 h. 相似文献
7.
McIntyre H. Wendell D. Lin K.J. Kaushik P. Seshadri S. Wang A. Sundararaman V. Ping Wang Song Kim Hsu W.-J. Hee-Choul Park Levinsky G. Jiejun Lu Chirania M. Heald R. Lazar P. Dharmasena S. 《Solid-State Circuits, IEEE Journal of》2005,40(1):52-59
A 4-MB L2 data cache was implemented for a 64-bit 1.6-GHz SPARC(r) RISC microprocessor. Static sense amplifiers were used in the SRAM arrays and for global data repeaters, resulting in robust and flexible timing operation. Elimination of the global clock grid over the SRAM array saves power, enabled by combining the clock information with array select signals. Redundancy was implemented flexibly, with shift circuits outside the main data array for area efficiency. The chip integrates 315 million transistors and uses an 8-metal-layer 90-nm CMOS process. 相似文献
8.
Sung‐Fu Hsu Tzong‐Ming Wu Chien‐Shiun Liao 《Journal of Polymer Science.Polymer Physics》2006,44(23):3337-3347
Poly(3‐hydroxybutyrate) (PHB)/layered double hydroxides (LDHs) nanocomposites were prepared by mixing PHB and poly(ethylene glycol) phosphonates (PEOPAs)‐modified LDH (PMLDH) in chloroform solution. Both X‐ray diffraction data and TEM micrographs of PHB/PMLDH nanocomposites indicate that the PMLDHs are randomly dispersed and exfoliated into the PHB matrix. In this study, the effect of PMLDH on the isothermal crystallization behavior of PHB was investigated using a differential scanning calorimeter (DSC) and polarized optical microscopy. Isothermal crystallization results of PHB/PMLDH nanocomposites show that the addition of 2 wt % PMLDH into PHB induced more heterogeneous nucleation in the crystallization significantly increasing the crystallization rate and reducing their activation energy. By adding more PMLDH into the PHB probably causes more steric hindrance of the diffusion of PHB, reducing the transportation ability of polymer chains during crystallization, thus increasing the activation energy. The correlation among crystallization kinetics, melting behavior and crystalline structure of PHB/PMLDH nanocomposites can also be discussed. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 3337–3347, 2006 相似文献
9.
Hsu S. Alvandpour A. Mathew S. Shih-Lien Lu Krishnamurthy R.K. Borkar S. 《Solid-State Circuits, IEEE Journal of》2003,38(5):755-761
This paper describes a 32-KB two-read, one-write ported L0 cache for 4.5-GHz operation in 1.2-V 130-nm dual-V/sub TH/ CMOS technology. The local bitline uses a leakage-tolerant self reverse-bias (SRB) scheme with nMOS source-follower pullup access transistors, while preserving robust full-swing operation. Gate-source underdrive of -220 mV on the bitline read-select transistors is established without external bias voltages or gate-oxide overstress. Device-level measurements in the 130-nm technology show 72/spl times/ bitline active leakage reduction, enabling low-V/sub TH/ usage, 40% bitline keeper downsizing, and 16 bitcells/bitline. 11% faster read delay and 2/spl times/ higher dc noise robustness are achieved compared with high-performance dual-V/sub TH/ bitline scheme. Sustained performance and robustness benefits of the SRB technique against conventional dynamic bitline with scaling to 100- and 70-nm technology is also presented. 相似文献
10.
A design-for-testability scheme for detecting CMOS analog faults was reported by Favalli et al. (see ibid., vol.25, no.5, p.1239-46, 1990). The authors propose two alternative designs, one for small circuits and another for large circuits, which require significantly less area overhead (about 1/4 to 1/3) than that of Favalli's design. With the proposed modification in the first design, the untestable problem, which occurred in Favalli's design, can be alleviated. Furthermore, the proposed schemes are also fit to be implemented in VLSI circuits 相似文献