Thermal stability of interfaces between metals and InP-based materials

The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively. Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor interfaces were the most stable.     

Ferromagnetic anomaly associated with the antiferromagnetic transitions in (donor)[Ni(mnt)2]-type charge-transfer salts

Three newly prepared [Ni(mnt)2] complexes, (HMTTF)[Ni(mnt)2], (ChSTF)[Ni(mnt)2], and (DBTTF)2[Ni(mnt)2], are reported (DBTTF = dibenzotetrathiafulvalene, ChSTF = 2,3-cyclohexylenedithio-1,4-dithia-5,8-diselanafulvalene, HMTTF = bis(trimethylene)-tetrathiafulvalene, and mnt = maleonitrile dithiolate). The former two compounds have usual DA-type (D = donor, A = acceptor) mixed stacks, whereas the DBTTF complex has DDDDAA-type 6-fold columns. These compounds are electrical insulators, but the HMTTF and ChSTF complexes exhibit chiT minima at 16 and 55 K, respectively, followed by chiT peaks at 8 and 16 K. Below these temperatures the ESR signal disappears, indicating antiferromagnetic transitions. The origin of the ferromagnetic interaction is explained either from the difference of the g values between the donor and the anion or from the intrinsic ferromagnetic interaction of the [Ni(mnt)2] anions.     

High n-value phases in the complex bismuth oxides with layered structure,Bi2CaNan−2NbnO3n+3

Complex bismuth oxides with layered structure are prepared with a series of compositions in the system Bi₂CaNb₂O₉-NaNbO₃. It is found by X-ray powder diffraction that each compound is composed of more than two phases, which are described by a formula Bi₂CaNa_n?2Nb_nO_3n+3, e.g., in the sample with the nominal composition Bi₂CaNb₂O₉ · 8NaNbO₃, the phases with n = 6 to 8 appear predominantly. These phases are closely intergrown to each other. Moreover, high-resolution electron microscopy reveals that microsyntactic intergrowth frequently occurs in the phases with n > 5. The occurrence of the latter intergrowth is explained in terms of the bond length obtained.     

Synthesis and γ-radiolysis of 2′-deoxy-5-fluorouridine and 5-fluorouridine derivatives

Seventeen compounds having a variety of substituents at the 3- and 5′-positions of 2′-deoxy-5-fluorouridine (5-FUdR) and 5-fluorouridine (5-FUR) were synthesized, and their γ-radiolysis in aqueous solutions were studied. The compounds having thioureido (RNHCSNH, R  H, PhCH₂, acyl) and thiocarbonylamino (XCSNH, X  PhCH₂S, PhO) groups at the 3-position of 5-FUdR were efficiently cleaved to give 5-FUdR with high G values upon γ-irradiation of their aqueous solutions. The active species for these cleavage reactions were hydrated electron (e⁻ _aq), H^• and HO^•. However, the compounds having a dimethylsulfoxyimino group at 3-position of 5-FUdR and 5-FUR afforded 5-FUdR and 5-FUR only under the radiolysis conditions where e⁻ _aq becomes a principal active species. The compound having a 2-benzoylthiazoylthiocarbonylamino group at the 3-position of 5-FUdR showed the highest reactivity toward HO^.. The mechanisms of these γ-radiolysis reactions are discussed. The examination of anticellular activities of γ-irradiated compounds having a thiocarbonylamino group at the 3-position of 5-FUdR toward murine Sarcoma 180 cells revealed that these compounds may be utilized as a candidate for a radiation-induced drug (RID).     

Extremely low noise InGaAs/InAlAs HEMT grown by MOCVD

MOCVD-grown InGaAs/InAlAs HEMTs with excellent noise performance comparable to that of MBE-grown devices have been successfully fabricated. A minimum noise figure lower than 0.30 dB has been obtained with an associated gain of approximately 15 dB at 12 GHz. Furthermore, devices in ceramic packages have exhibited a minimum noise figure of 0.42 dB.<>     

Ultrahigh-resolution laser spectroscopy of the S1B2u ← S0Ag transition of perylene

A rotationally resolved ultrahigh-resolution fluorescence excitation spectrum of the S₁ ← S₀ transition of perylene has been observed using a collimated supersonic jet technique in conjunction with a single-mode UV laser. We assigned 1568 rotational lines of the band, and accurately determined the rotational constants. The obtained value of inertial defect was positive, accordingly, the perylene molecule is considered to be planar with D_2h symmetry. We determined the geometrical structure in the S₀ state by ab initio theoretical calculation at the RHF/6-311+G(d,p) level, which yielded rotational constant values approximately identical to those obtained experimentally. Zeeman broadening of each rotational line with the external magnetic field was negligibly small, and the mixing with the triplet state was shown to be very small. This evidence indicates that intersystem crossing (ISC) in the S₁¹B_2u state is very slow. The rate of internal conversion (IC) is also inferred to be small because the fluorescence quantum yield is high. The rotational constants of the S₁¹B_2u state were very similar to those of the S₀¹A_g state. The slow internal conversion (IC) at the S₁ zero-vibrational level is attributed to a small structural change upon electronic transition.     

用于新一代器件的最新STI和金属CMP浆料

现已开发出了用于浅沟道隔离穴STI雪、铜CMP和低k介质的新型材料。90nm以及下一代技术节点的新型器件要求在软接触CMP条件下减少缺陷率,改善片子表面形貌的衰减。获得的新材料展示了在CMP性能和街写特性方面的改进,因此这些材料被认为能够适应未来技术要求。这些材料的关键之处在于大颗粒尺寸的控制,进行平面化和金属抛光的化学控制以及将控制方法用于旋涂玻璃()材料。