Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs

The hydrogen annealing process has been used to improve surface roughness of the Si-fin in CMOS FinFETs for the first time. Hydrogen annealing was performed after Si-fin etch and before gate oxidation. As a result, increased saturation current with a lowered threshold voltage and a decreased low-frequency noise level over the entire range of drain current have been attained. The low-frequency noise characteristics indicate that the oxide trap density is reduced by a factor of 3 due to annealing. These results suggest that hydrogen annealing is very effective for improving device performance and for attaining a high-quality surface of the etched Si-fin.     

Reliability evaluation of class-E and class-a power amplifiers with nanoscaled CMOS technology

Circuit reliability of class-E and class-A power amplifiers is investigated based on a newly developed degradation subcircuit model. Measured degradation characteristics on the fabricated circuits agree well with the simulation predictions. Using this model, we have found that the class-E amplifier degrades faster than a class-A amplifier, due to a much higher stress level during switching. With a drastic decrease of PAE, a shorter lifetime is expected for a class-E amplifier.     

Mathematical modelling of the oxidation of nickel titanium alloys

A one-dimensional bulk reaction model for the oxidation of nickeltitanium is formulated, with preferential oxidation of titaniumbeing included. The modelling is directed at the better understandingof the dominant mechanisms involved in the oxidation processand their significance for the biocompatibility of the alloy.Two different regimes for the relative diffusivities of oxygenand the metals are investigated. By assuming fast bulk reactions,different asymptotic structures emerge in different parameterregimes and the resulting models take the form of moving boundaryproblems. Different profiles of nickel concentration are obtained:in particular a nickel-rich layer (observed in practice) ispresent below the oxide/metal interface for the case when oxygenand the metals diffuse at comparable rates.     

Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap

A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (reduced variability in performance and improved scalability) together with the advantages of a conventional planar MOSFET (low substrate cost and capability for dynamic threshold-voltage control).     

Multi-emitter Si/GexSi1-x heterojunctionbipolar transistor with no base contact and enhanced logic functionality

We demonstrate multi-emitter Si/Ge_xSi_1-x n-p-n heterojunction bipolar transistors (HBT's) which require no base contact for transistor operation. The base current is supplied by the additional emitter contact under reverse bias due to the heavy doping of the emitter-base junction. Large-area HBT test structures exhibit good transistor characteristics, with current gain β≈400 regardless of whether the base current is supplied by a test base electrode or one of the emitter contacts. These devices have enhanced logic functionality because of emitter contact symmetry. Since device fabrication does not require base electrode formation, the number of processing steps can be reduced without significant penalty to HBT performance     

Wideband chirp measurement technique for high bit rate sources

A Mach Zehnder (MZ) interferometer has been used as an optical discriminator to measure the time-resolved frequency chirp of an optical source     

A Faster Deterministic Maximum Flow Algorithm

Cheriyan and Hagerup developed a randomized algorithm to compute the maximum flow in a graph with n nodes and m edges in O(mn + n² log²n) expected time. The randomization is used to efficiently play a certain combinatorial game that arises during the computation. We give a version of their algorithm where a general version of their game arises. Then we give a strategy for the game that yields a deterministic algorithm for computing the maximum flow in a directed graph with n nodes and m edges that runs in time O(mn(log_{m/n log n}n)). Our algorithm gives an O(mn) deterministic algorithm for all m/n = Ω(n^ε) for any positive constant ε, and is currently the fastest deterministic algorithm for computing maximum flow as long as m/n = ω(log n).     

Fields and currents in the organs of the human body when exposed topower lines and VLF transmitters

A study is made of the electric fields and currents induced in the organs of the human body when exposed to high-voltage 50-60-Hz transmission lines and 10-30-kHz high-power transmitters. Relevant analyses previously carried out are summarized and supplemented with detailed investigations that complete the picture. Incomplete, misleading, and incorrect statements and methods in the related literature are pointed out, completed, and corrected. The major contribution is to provide quantitatively accurate, relatively simple analytic formulas that relate the incident electric field to the induced field in the organs of the body. The formulation and solution of the underlying integral equation are carried out in an Appendix     

Advancing Mathematical Activity: A Practice-Oriented View of Advanced Mathematical Thinking

The purpose of this article is to contribute to the dialogue about the notion of advanced mathematical thinking by offering an alternative characterization for this idea, namely advancing mathematical activity. We use the term advancing (versus advanced) because we emphasize the progression and evolution of students' reasoning in relation to their previous activity. We also use the term activity, rather than thinking. This shift in language reflects our characterization of progression in mathematical thinking as acts of participation in a variety of different socially or culturally situated mathematical practices. For these practices, we emphasize the changing nature of students' mathematical activity and frame the process of progression in terms of multiple layers of horizontal and vertical mathematizing.     

Electrical characterization and modeling of alternating-currentthin-film electroluminescent devices

Electrical characterization of evaporated ZnS:Mn alternating-current thin-film electroluminescent (ACTFEL) devices is accomplished by capacitance-voltage (C-V) analysis. Interpretation of these C-V characteristics is aided by SPICE modeling and by electrical characterization of an ideal ACTFEL device constructed from discrete components, based on a simple equivalent circuit for the ACTFEL device. Various features of the C -V curve are ascribed to equivalent circuit parameters and associated device physics parameters