Multipath structure for FSR expansion in waveguide-based optical ring resonator

A multipath structure of a ring resonator is proposed to expand the free spectral range. Simulation work indicates that the multipath ring resonator has 25 GHz-adjacent-channel crosstalk of -41 dB, maximum interchannel crosstalk of -18 dB, and -1 dB bandwidth of 4 GHz for a typical expansion factor of 10. The results show the advantages of characteristics compared with a double-cavity ring resonator and a triple-coupler ring resonator.     

Transmission capacity of optical path overhead transfer schemeusing pilot tone for optical path network

Photonic networks based on the optical path concept and wavelength division multiplexing (WDM) technology require unique operation, administration, and maintenance (OAM) functions. In order to realize the required OAM functions, the optical path network must support an effective management information transfer method. The method that superimposes a pilot tone on the optical signal appears very interesting for optical path overhead transfer. The pilot tone transmission capacity is determined by the carrier to noise ratio which depends on the power spectral density of the optical signal. The pilot tone transmission capacity of an optical path network employing WDM technology is elucidated; 4.5 kb/s transmission can be realized when the pilot tone modulation index is set at 3%     

Laser coupling to single-mode fibre using graded-index lenses and compact disc 1.3 ?m laser package

A 1.3 ?m laser in a compact disc package is coupled to single-mode fibre using two graded-index lenses in a nearly confocal scheme. An increase in the alignment tolerance at the lens-lens interface by a factor of six suggests the design for a potentially very low-cost connectorised laser package. The coupling efficiency of approx. 6% (?12 dB) is shown to be adequate for local loop applications.     

Basic Properties of the (t, n)-Threshold Visual Secret Sharing Scheme with Perfect Reconstruction of Black Pixels

In this paper we consider the (t, n)-threshold visual secret sharing scheme (VSSS) in which black pixels in a secret black-white images is reproduced perfectly as black pixels when we stack arbitrary t shares. This paper provides a new characterization of the (t, n)-threshold visual secret sharing scheme with such a property (hereafter, we call such a VSSS the (t, n)-PBVSSS for short). We use an algebraic method to characterize basis matrices of the (t, n)-PBVSSS in a certain class of matrices. We show that the set of all homogeneous polynomials each element of which yields basis matrices of the (t, n)-PBVSSS becomes a set of lattice points in an (n−t+1)-dimensional linear space. In addition, we prove that the optimal basis matrices in the sense of maximizing the relative difference among all the basis matrices in the class coincides with the basis matrices given by Blundo, Bonis and De Santis [3] for all n≥ t ≥ 2.     

Malyngamide X: The First (7R)‐Lyngbic Acid that Connects to a New Tripeptide Backbone from the Thai Sea Hare Bursatella leachii

Malyngamide X ( 1 ), the first (7R)‐lyngbic acid connected to a new tripeptide backbone, was isolated from the Thai sea hare Bursatella leachii. The gross structure of 1 was established on the basis of 1D and 2D NMR and mass spectroscopic data. Combination of the NMR spectroscopic experiments with α‐methoxy‐α‐(trifluoromethyl)phenylacetic acid esters, 2,2,2‐trifluoro‐1‐(9‐anthryl)ethanol chiral solvating agent, and molecular mechanics of 1 and the synthetic molecular fragments allowed us to determine the absolute stereochemistry of all six stereogenic centers without hydrolytic degradation of the compound. Compound 1 displayed moderate cytotoxic, antitubercular, and antimalarial properties.     

Simulation of electron bunch generation by an ultrashort-pulse high-intensity laser-driven wakefield

Electron acceleration due to a wakefield excited by a ultrashort-pulse intense laser propagating through a finite-length underdense plasma layer is studied by two-dimensional particle-in-cell simulation. The electron energy distribution is analyzed for moderate to high intensity. For the electron density, where the pulse length is almost half of the plasma wavelength, dramatic changes of the density structure occur with cavity and bunch formation with an increase in the laser intensity, also leading to the appearance of a fast electron component well confined in phase space. The analytical form of the fast electron energy spectrum is also presented.     

A study of quantum interference fluctuations in deep sub-μmMOSFET's under cryogenic conditions

We investigated the phase coherence length, l_φ, in large Si-MOSFET's fabricated using current process technology, with a particular emphasis on highly doped silicon substrates, and then studied the effects of quantum conductance fluctuations in deep sub-μm MOSFET's, with channel length comparable to l_φ. We identified, in a 0.2 μm MOSFET, universal conductance fluctuations in the strong inversion regime and conductance fluctuations due to variable range hopping in the weak inversion regime. The drain bias dependence of these fluctuations indicates clearly that they become a serious concern only at drain voltages lower than 10 mV. Therefore, even if the wave nature of electrons results in quantum conductance fluctuations, it will not lead to a limitation on device miniaturization in future Si-ULSI's     

0.25 μm gate length CMOS devices for cryogenic operation

Under cryogenic operation, a low V_th realizes a high speed performance at a greatly reduced power-supply voltage, which is the most attractive feature of Cryo-CMOS. It is very important in sub-0.25 μm Cryo-CMOS devices to reconcile the miniaturization and the low V_th. Double implanted MOSFET's technology was employed to achieve the low V_th while maintaining the short channel effects immunity. We have investigated both the DC characteristics and the speed performance of 0.25 μm gate length CMOS devices for cryogenic operation. The measured transconductances in the saturation region were 600 mS/mm for 0.2 μm gate length n-MOSFET's and 310 mS/mm for 0.25 μm gate length p-MOSFET's at 80 K. The propagation delay time in the fastest CMOS ring oscillator was 22.8 ps at V_dd=1 V at 80 K. The high speed performance at extremely low power-supply voltages has been experimentally demonstrated. The speed analysis suggests that the sub-l0 ps switching of Cryo-CMOS devices will be realized by reducing the parasitic capacitances and through further miniaturization down to 0.1 μm gate length or below     

Electron g-factor in a gated InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure

We report on electron g-factor in an InAs-inserted In_0.53Ga_0.47As/In_0.52Al_0.48As heterostructure. The gate voltage dependence of g-factor is obtained from the coincidence method. The obtained g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and it is close to the bare g-factor value of In_0.53Ga_0.47As. The large change in g-factor is observed by applying the gate voltage. The obtained gate voltage dependence is not simply explained by the energy dependence of g-factor.