Characteristics investigation on heat transfer growth of sonochemically synthesized ZnO-DW based nanofluids inside square heat exchanger

Journal of Thermal Analysis and Calorimetry - In recent decades, the growth of heat transfer using nanomaterials in the conventional base fluid has caught the attention of researchers...     

Attribute Allocation and Retrieval Scheme for Large-Scale Sensor Networks

Wireless sensor network is an emerging technology that enables remote monitoring of large geographical regions. In this paper, we address the problem of distributing attributes over such a large-scale sensor network so that the cost of data retrieval is minimized. The proposed scheme is a data-centric storage scheme where the attributes are distributed over the network depending on the correlations between them. The problem addressed here is similar to the Allocation Problem of distributed databases. In this paper, we have defined the Allocation Problem in the context of sensor networks and have proposed a scheme for finding a good distribution of attributes to the sensor network. We also propose an architecture for query processing given such a distribution of attributes. We analytically determine the conditions under which the proposed architecture is beneficial and present simulation results to demonstrate the same. To the best of our knowledge, this is the first attempt to determine an allocation of attributes over a sensor network based on the correlations between attributes.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

A New Asymmetric Long-Range Model and Algebraic Bethe Ansatz

A new integrable long-range model is derived from a new asymmetric R-matrix recently discussed by Bibikov in relation to a XXZ spin chain in an external magnetic field. The algebraic Bethe Ansatz is used to derive the eigenvalues and equations for the eigen momenta both for the usual and long-range model.     

Nanostructured Ion-Selective MCM-48 Membranes

Templated MCM-48 silica was prepared using CTAB as surfactant. The MCM-48 powders and thin films were characterized by different techniques. MCM-48 layers were deposited on macroporous α-alumina supports and silicon nitride microsieves. The water permeability of MCM-48 was compared with the permeability of conventional mesoporous γ-alumina membranes. The applicability of MCM-48 as ion-selective electric field-driven switchable interconnect for microfluidic devices was demonstrated.     

A 4-MB on-chip L2 cache for a 90-nm 1.6-GHz 64-bit microprocessor

A 4-MB L2 data cache was implemented for a 64-bit 1.6-GHz SPARC(r) RISC microprocessor. Static sense amplifiers were used in the SRAM arrays and for global data repeaters, resulting in robust and flexible timing operation. Elimination of the global clock grid over the SRAM array saves power, enabled by combining the clock information with array select signals. Redundancy was implemented flexibly, with shift circuits outside the main data array for area efficiency. The chip integrates 315 million transistors and uses an 8-metal-layer 90-nm CMOS process.     

A rate-dependent algebraic stress model for turbulence

Based on the stress transport model, a rate-dependent algebraic expression for the Reynolds stress tensor is developed. It is shown that the new model includes the normal stress effects and exhibits viscoelastic behavior. Furthermore, it is compatible with recently developed improved models of turbulence. The model is also consistent with the limiting behavior of turbulence in the inertial sublayer and is capable of predicting secondary flows in noncircular ducts. The TEACH code is modified according to the requirements of the rate-dependent model and is used to predict turbulent flow fields in a channel and behind a backward-facing step. The predicted results are compared with the available experimental data and those obtained from the standard k-ε and algebraic stress models. It is shown that the predictions of the new model are in better agreements with the experimental data.     

Non-compact generalized variational inequalities for quasi-monotone and hemi-continuous operators with applications

Some results are obtained for non-compact cases in topological vector spaces for the existence problem of solutions for some set-valued variational inequalities with quasi-monotone and lower hemi-continuous operators, and with quasi-semi-monotone and upper hemi-continuous operators. Some applications are given in non-reflexive Banach spaces for these existence problems of solutions and for perturbation problems for these set-valued variational inequalities with quasi-monotone and quasi-semi-monotone operators. This revised version was published online in June 2006 with corrections to the Cover Date.     

Functionalized Nanostructures with Liquid‐Like Behavior: Expanding the Gallery of Available Nanostructures

Recently, we have developed a novel family of functionalized nanostructures that exhibit liquid‐like behavior in the absence of solvents and preserve their nanostructure in the liquid state. The gallery of nanostructures developed so far includes functionalized silica and magnetic iron oxide nanoparticles, layer‐like organosilicate nanoparticles, polyoxometalate clusters, and organic–inorganic hybrid networks. In an effort to demonstrate the wider applicability of this concept and to provide a deeper insight into this class of materials, the present work cites additional paradigms of functionalized nanostructures with similar behavior as above. In one case, surface functionalization of anatase nanoparticles (TiO₂, an inorganic nanostructure) with a quaternary ammonium organosilane leads to ionically modified nanoparticles that, when electrostatically combined with a poly(ethylene glycol) (PEG)‐tailed sulfonate anion, exhibit liquid‐like behavior in the absence of solvents. In a different but quite interesting case of a bionanostructure, ion‐exchange functionalization of a DNA oligonucleotide with a PEG‐tailed quaternary ammonium cation leads to an easily separable liquid derivative with attractive features. These examples show the versatility of this concept over a range of nanostructures.