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The contributions of ions and neutral active states to secondary electron emission in the afterglow has been analyzed of the time delay method. The dependencies of mean value of time delay on relaxation time, overvoltage, and glow current have been discussed. The analysis of validity of Laue distribution for time delay has been performed, becoming the criterion for estimation of the main cause of breakdown. Thus, afterglow can be divided in three regions: one each for the role of charged and neutral species in initiation of subsequent breakdown, and third, as the transitional one  相似文献   
2.
High-frequency periodical steady-state analysis of minority carrier diffusion in the quasineutral region of high-speed bipolar transistors including the influence of the finite momentum relaxation time term, is presented. A new method of solving coupled time-dependent minority carrier transport equations, based on the model for the unhomogeneous lossy transmission line, is also described.<>  相似文献   
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