Micrometre double-quantum ionization of Rydberg hydrogen using linearly and circularly polarized light

The European Physical Journal D - We investigate the two-color two-photon K-shell ionization of neutral atoms based on the relativistic second-order perturbation theory and independent particle...     

Scaling planar silicon devices

The generation-over-generation scaling of critical CMOS technology parameters is ultimately bound by nonscalable limitations, such as the thermal voltage and the elementary electronic charge. Sustained improvement in performance and density has required the introduction of new device structures and materials. Partially depleted SOI, a most recent MOSFET innovation, has extended VLSI performance while introducing unique idiosyncrasies. Fully depleted SOI is one logical extension of this device design direction. Gate dielectric tunneling, device self-heating, and single-event upsets present developers of these next-generation devices with new challenges. Strained silicon and high-permittivity gate dielectric are examples of new materials that will enable CMOS developers to continue to deliver device performance enhancements in the sub-100 nm regime.     

Performance evaluation of a teletext system

Four parameters are defined to measure the performance of a teletext system, namely, the probability of delivering a message within specified time, the transmission efficiency, the average number of errors per page, and the throughput. Each of them is derived and computational results are presented taking the UK teletext system as an example. These parameters are compared in their ability to characterize the performance of the teletext system     

Miniaturised two-stage balanced Ku-band CPW MMIC amplifier using impedance transforming couplers

A two-stage balanced Ku-band coplanar waveguide amplifier design is presented which has been miniaturised by using impedance transforming couplers which considerably reduce the required matching networks to the MESFETs. The amplifier, measuring only 2*1.7 mm/sup 2/, exhibits a gain of 13.7 dB with less than +or-0.2 dB of ripple over the range 14-16 GHz.<>     

Structural study and electrical properties of Zr-doped Nd<Subscript>2</Subscript>Sn<Subscript>2</Subscript>O<Subscript>7</Subscript> pyrochlore compounds

Nd₂Sn₂O₇ pyrochlores with the substitution of Zr⁴⁺ were prepared by conventional ceramic double sintering technique. The single-phase formation was confirmed by X-ray diffraction and neutron diffraction techniques. Relative intensity calculations for X-ray diffraction analysis were performed for oxygen positional parametersx = 0.331 and 0.375, while Rietveld refinements were employed for neutron diffraction data. The neutron diffraction study revealed that there are only two anion sites with 48f and 8b positions. This indicates that the 8a site, i.e. O(3) sublattice, is completely vacant and the structure is a perfect cubic pyrochlore with space group Fd3m (O _h ⁷ ). From the conductivity measurements, it is observed that the electronic conductivity dominates from room temperature up to about 525 K and forT > 525 K, the oxygen ion conduction dominates the charge transport in these compositions. Complex impedance spectroscopy indicates the existence of grain and grain boundary as two separate elements.     

Scale periodicity and its sampling theorem

The scalar transform is a new representation for signals, offering a perspective that is different from the Fourier transform. We introduce the notion of a scalar periodic function. These functions are then represented through the discrete scale series. We also define the notion of a strictly scale-limited signal. Analogous to the Shannon interpolation formula, we show that such signals can be exactly reconstructed from exponentially spaced samples of the signal in the time domain. As an interesting, practical application, we show how properties unique to the scale transform make it very useful in computing depth maps of a scene     

Thermal challenges in next generation electronic systems - summary of panel presentations and discussions

The presentations made, as well as the discussions, in the panels at the workshop, Thermal Challenges in Next Generation Electronic Systems (THERMES), are summarized in this paper. The panels dealt with diverse topics including thermal management roadmaps, microscale cooling systems, numerical modeling from the component to system levels, hardware for future high performance and Internet computing architectures, and transport issues in the manufacturing of electronic packages. The focus of the panels was to identify barriers to further progress in each area that require the attention of the research community.     

N = 4 Supersymmetric (Dyonic) Hypermultiplets in String Theory

In four-dimensional N = 4 supersymmetric gauge theory, we obtain an exact metric on the moduli space of quantum vacua and analyze the spectra of BPS states in weak as well as in strong coupling regions. Identifying the hypermultiplet of the dyonic state as a string stretched between D₃-brane probe and a 7-brane, we demonstrate that the two hypermultiplets, which become massless at two singularities in supersymmetric theory, correspond to open strings beginning on the D₃-brane and ending on the respective 7-brane.