Defocusing image to pattern contact holes using attenuated phase shift masks

The patterning of contact holes by selecting out-of-focus image plane (defocus) using attenuated phase shift masks (APSM) has been studied. Defocus is found to enhance the image modulation at low partial coherence for contact holes with negative local average of mask function. Semi-dense holes up to 130 nm in 8% APSM have been printed by 0.5 μm defocus at a partial coherence of 0.31 using KrF scanner with highest numerical aperture of 0.68. However, these holes were closed with in-focus imaging. Defocus is also found to be beneficial for patterning the pitches that have extensive side lobes with in-focus imaging.     

4一致反超图的最小边数问题

混合超图是在超图的基础上添加一个反超边得到的图．超边和反超边的区别主要体现在着色要求上．在着色中,要求每一超边至少要有两个点着不同的颜色,而每一反超边至少有两个点着相同的颜色．最大最小颜色数分别称为混合超图的上色数和下色数。本文主要研究反超图,即只含反超边的超图。讨论了上色数为3的4一致超图的最小边数问题．给出了上色数为3的4一致反超图的最小边数的一个上界和一个下界．     

Some results on fractionaln-factor-critical graphs

A simple graphG is said to be fractionaln-factor-critical if after deleting anyn vertices the remaining subgraph still has a fractional perfect matching. For fractionaln-factor-criticality, in this paper, one necessary and sufficient condition, and three sufficient conditions related to maximum matching, complete closure are given.