Heterogeneous nucleation and growth of CdSe on magnetite seed nanocrystals: The influence of ligand and morphology

The heterogeneous nucleation and growth of CdSe domains on the Fe₃O₄ seed nanocrystals are hard to be controlled because of significant lattice mismatch between Fe₃O₄ and CdSe nanocrystals. Current study exploits the choice of surface ligand and crystal morphology for Fe₃O₄ seed to investigate ways to overcome the energy barrier imposed by the lattice mismatch for the promotion and control of subsequent growth of CdSe nanocrystals on seeded crystals. Results indicate that the growth of CdSe domains on seed nanocrystals not only depends on the affinity of ligands toward seed nanocrystals, but also is affected by the seed ligands in a similar way to synthesizing individual second-domain nanocrystals. Furthermore, preferential growth of CdSe domains on the corner of cubic seeds are observed, and cubic Fe₃O₄ nanocrystals are favored for the heterogeneous nucleation of CdSe as opposed to spherical ones. A three-stage growth model (heterostructures formation, the adsorption of Se and the heterogeneous nucleation and growth) is proposed, where choice of ligands, geometry features, such as surface curvature and defects are found to have significant impact to overcome energy barrier from lattice mismatch.     

一种改进的MOS器件热载流子退化模型

An improved hot carrier injection （HCI） degradation model was proposed based on interface trap generation and oxide charge injection theory. It was evident that the degradation behavior of electric parameters such as Idlin, Idsat, Gm and Vt fitted well with this model. Devices were prepared with 0.35μm technology and different LDD processes. Idlin and Idsat after HCI stress were analyzed with the improved model. The effects of interface trap generation and oxide charge injection on device degradation were extracted, and the charge injection site could be obtained by this method. The work provides important information to device designers and process engineers.     

新型紫外探测器及其应用

综述了我所研制的新型紫外探测器的工作原理、结构设计。介绍了这类具有极高灵敏度和超快时间响应探测器的主要技术性能及其在高技术武器装备和民用市场的潜在应用。     

An improved HCI degradation model for a VLSI MOSFET

An improved hot carrier injection (HCI) degradation model was proposed based on interface trap gen-eration and oxide charge injection theory. It was evident that the degradation behavior of electric parameters such as I_(dlin), I_(dsat), G_m and V_t fitted well with this model. Devices were prepared with 0.35μm technology and different LDD processes, I_(dlin) and I_(dsat) after HCI stress were analyzed with the improved model. The effects of interface trap generation and oxide charge injection on device degradation were extracted, and the charge injection site could be obtained by this method. The work provides important information to device designers and process engineers.     

硫酸浸取锂云母后Rb~+和Cs~+的富集与分离

将质量比为1:2.5的锂云母矿和40%的硫酸在120℃下回流反应8h,用两倍反应液体积的水浸取过夜,得到浸取液,再通过自制的磷钨酸铵/二氧化硅(AWP/SiO2)无机离子交换剂对Rb+和Cs+进行富集。由静态吸附实验可知,AWP/SiO2对Rb+和Cs+有很好的选择性,而对其它离子基本不吸附,动态吸附过程考察了离子交换剂的使用量和负载量对Rb+和Cs+的吸附效果的影响;最后分别用不同浓度的(NH4)2SO4洗脱Rb+和Cs+,洗脱率分别为105.04%和90.63%;实验结果表明:AWP/SiO2这种无机离子交换材料能够很好地富集Rb+和Cs+,并且采用合适的洗脱剂很容易将Rb+和Cs+分离。     

真空紫外MCP—PMT中应用碘化铯阴极的研究

简述了真空紫外ＭＣＰ－ＰＭＴ选择碘化铯做为阴极的依据，介绍了铬膜的透光性及碘化铯阴极的制作与阴极辐射灵敏度的测量，研制出整管，由此得出了相关的结论。     

氮化镓(GaN)阴极紫外微通道板光电倍增管

<正>南京电子器件研究所近期研制成功的氮化镓(GaN)阴极紫外光电倍增管,采用MOCVD方式外延生长的蓝宝石/AlN/P-AlGaN异质外延结构作为阴极衬底材料,通过真空转移设备的高铝P型GaN材料微结构设计和工艺流通、透射式异质阴极材料生长、GaN外延片洁净处     

Statistical Channel Knowledge-Based Distributed Power Allocation for Analog Network Coding in High SNR

International Journal of Wireless Information Networks - A novel distributed power allocation scheme for analog network coding (ANC) in high signal-to-noise ratio (SNR) is proposed by using...     

黄铜矿型铜基硫属半导体材料的电子结构和光学性质

采用基于赝势平面波基组的密度泛函理论方法, 对具有黄铜矿结构的6种CuXY₂(X=Ga, In; Y=S, Se, Te)晶体的构型、 电子结构、 线性及二阶非线性光学性质进行了研究. 结果表明, 6种CuXY₂均为直接带隙半导体, 具有相似的能带结构. 当X原子相同时, 随着Y原子按S→Se→Te依次改变时, 体系的静态介电常数、 静态折射率和静态倍频系数(d₃₆)依次递增. 在占据带中, 位于价带顶附近的能带对体系倍频效应影响最为显著, 该系列化合物的能带主要成分为Cu的3d轨道和Y原子价层p轨道; 对于空能带, 对倍频系数影响较大的是以X原子价层p轨道为主要成分的能带. 6种晶体中, CuInSe₂晶体具有较高的光电导率并对太阳光具有较好的吸收性能. 综合考虑体系的双折射率和倍频效应等因素, CuGaS₂和CuGaSe₂ 2种晶体在二阶非线性光学领域具有潜在的应用价值.     

MgF2光窗性能与洁净工艺的研究

介绍了ＭｇＦ２晶体的主要物理性能。研究了它与其它碱土金属卤化物相比，更适合作为真空紫外窗口材料的理论依据。最后简要阐述了其用于整管制作时的洁净工艺。